NE3521M04 Datasheet PDF - Renesas

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NE3521M04
Renesas

Part Number NE3521M04
Description N-Channel GaAs HJ-FET
Page 10 Pages


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NE3521M04
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
Data Sheet
R09DS0058EJ0100
Rev.1.00
Mar 19, 2013
FEATURES
Low noise figure and high associated gain:
NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz
NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value)
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3521M04-T2
Order Number
NE3521M04-T2-A
NE3521M04-T2B NE3521M04-T2B-A
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Quantity
3 kpcs/reel
15 kpcs/reel
Marking
V86
Supplying Form
Embossed tape 8 mm wide
Pin 1 (Source), Pin 2 (Drain)
face the perforation side of the
tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3521M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
–3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
80
125
Channel Temperature
Tch +125
Storage Temperature
Tstg –65 to +125
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 1 of 8
Free Datasheet http://www.datasheet4u.com/

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NE3521M04 N-Channel GaAs HJ-FET NE3521M04
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