NE3521M04 Datasheet PDF - Renesas

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NE3521M04
Renesas

Part Number NE3521M04
Description N-Channel GaAs HJ-FET
Page 10 Pages


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NE3521M04
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
Data Sheet
R09DS0058EJ0100
Rev.1.00
Mar 19, 2013
FEATURES
Low noise figure and high associated gain:
NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz
NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value)
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
DBS LNB gain-stage, Mix-stage
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
NE3521M04-T2
Order Number
NE3521M04-T2-A
NE3521M04-T2B NE3521M04-T2B-A
Package
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
Quantity
3 kpcs/reel
15 kpcs/reel
Marking
V86
Supplying Form
Embossed tape 8 mm wide
Pin 1 (Source), Pin 2 (Drain)
face the perforation side of the
tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3521M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
–3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
80
125
Channel Temperature
Tch +125
Storage Temperature
Tstg –65 to +125
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 1 of 8
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NE3521M04
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol MIN. TYP. MAX. Unit
Drain to Source Voltage
Drain Current
Input Power
VDS 1 2 3 V
ID 3 10 15 mA
Pin – – 0 dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
IGSO
IDSS
VGS (off)
gm
NF
Ga
VGS = –3.0 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 μA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 20 GHz
– 0.5 10
25 45 70
–0.2 –0.7 –1.3
50 –
– 0.85 1.2
9 11 –
Unit
μA
mA
V
mS
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Noise Figure
Associated Gain
NF VDS = 2 V, ID = 6 mA, f = 20 GHz
Ga
Reference Value
0.9
10.5
Unit
dB
dB
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 2 of 8
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NE3521M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
200
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
VDS = 2 V
70
60
150 50
125 40
100 30
20
50
10
0 50 100 125 150 200 250
Ambient Temperature TA (°C)
0
-0.80
-0.60
-0.40
-0.20
0.00
GATE TO SOURCE VOLTAGE VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs.DRAIN CURRENT
2.5
f = 20 GHz
VDS = 2 V
2.0
14
Ga 13
12
11
1.5 10
9
1.0 8
NFmin
0.5
7
6
5
0.0 4
0 5 10 15 20 25 30
DRAIN CURRENT ID (mA)
DRAIN CURRENT
vs. DRAIN TO SOURCE VOLTAGE
80
70
60
50
VGS = 0 V
40 -0.1 V
30
-0.2 V
20
-0.3 V
10 -0.4 V
-0.5 V
0
0.0 1.0 2.0 3.0 4.0
DRAIN TO SOURCE VOLTAGE VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs.FREQUENCY
2.0
1.8 VDS = 2 V
ID = 10 mA
1.6
20
18
16
1.4 14
Ga
1.2 12
1.0 10
0.8 8
0.6
0.4 NFmin
6
4
0.2 2
0.0
5
0
10 15 20 25 30
FREQUENCY f (GHz)
Remark The graphs indicate nominal characteristics.
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 3 of 8
Free Datasheet http://www.datasheet4u.com/



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NE3521M04
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] [RF Devices] [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0058EJ0100 Rev.1.00
Mar 19, 2013
Page 4 of 8
Free Datasheet http://www.datasheet4u.com/



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