NE3520S03 Datasheet PDF - Renesas

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NE3520S03
Renesas

Part Number NE3520S03
Description N-Channel GaAs HJ-FET
Page 10 Pages


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NE3520S03
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
FEATURES
Low noise figure and high associated gain:
NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA
K band Micro-X plastic (S03) package
Data Sheet
R09DS0029EJ0100
Rev.1.00
Oct 18, 2011
APPLICATIONS
20 GHz band DBS LNB
Other K band communication system
ORDERING INFORMATION
Part Number
NE3520S03-T1C
Order Number
NE3520S03-T1C-A
Package
S03 package
(Pb-Free)
NE3520S03-T1D NE3520S03-T1D-A
Quantity
2 kpcs/reel
10 kpcs/reel
Marking
J
Supplying Form
Embossed tape 8 mm wide
Pin 4 (Gate) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3520S03
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
–3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
100
165
Channel Temperature
Tch +125
Storage Temperature
Tstg –65 to +125
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 1 of 8
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NE3520S03
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Symbol MIN. TYP. MAX. Unit
Drain to Source Voltage
Drain Current
Input Power
VDS +1 +2 +3 V
ID 5 10 15 mA
Pin – – 0 dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
IGSO
IDSS
VGS (off)
gm
NF
Ga
VGS = –3.0 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 100 μA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 20 GHz
– 0.5 10
25 40 70
–0.2 –0.7 –1.3
50 65
– 0.65 0.90
11.5 13.5
Unit
μA
mA
V
mS
dB
dB
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 2 of 8
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NE3520S03
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
150
100
50
0 50 100 150 200 250
Ambient Temperature TA (°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
80
70
60
50
40
30
20
10
0
0.0
VGS = 0 V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
–0.5 V
1.0 2.0 3.0 4.0
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
1.2
1.1
VDS = 2 V
ID = 10 mA
1.0
20
19
18
0.9 17
0.8 16
0.7 15
0.6 Ga 14
0.5 13
0.4
NFmin
0.3
12
11
0.2 10
10 15 20 25
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
VDS = 2 V
70
60
50
40
30
20
10
0
–0.8
–0.6
–0.4
–0.2
0
Gate to Source Voltage VGS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.5
f = 20 GHz
1.4 VDS = 2 V
1.3
16
15
Ga 14
1.2 13
1.1 12
1.0 11
0.9
NFmin
0.8
10
9
0.7 8
0.6 7
0.5 6
0 5 10 15 20 25
Drain Current ID (mA)
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 3 of 8
Free Datasheet http://www.datasheet4u.com/



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NE3520S03
S-PARAMETERS
S-parameters/Noise-parameters are provided on our web site in a form (S2P) that enables direct import to a microwave
circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] [Device Parameters]
URL http://www2.renesas.com/microwave/
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 4 of 8
Free Datasheet http://www.datasheet4u.com/



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NE3520S03 N-Channel GaAs HJ-FET NE3520S03
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