NE3520S03 Datasheet PDF - Renesas

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NE3520S03
Renesas

Part Number NE3520S03
Description N-Channel GaAs HJ-FET
Page 10 Pages


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NE3520S03
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
FEATURES
Low noise figure and high associated gain:
NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA
K band Micro-X plastic (S03) package
Data Sheet
R09DS0029EJ0100
Rev.1.00
Oct 18, 2011
APPLICATIONS
20 GHz band DBS LNB
Other K band communication system
ORDERING INFORMATION
Part Number
NE3520S03-T1C
Order Number
NE3520S03-T1C-A
Package
S03 package
(Pb-Free)
NE3520S03-T1D NE3520S03-T1D-A
Quantity
2 kpcs/reel
10 kpcs/reel
Marking
J
Supplying Form
Embossed tape 8 mm wide
Pin 4 (Gate) face the
perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3520S03
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
–3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
100
165
Channel Temperature
Tch +125
Storage Temperature
Tstg –65 to +125
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0029EJ0100 Rev.1.00
Oct 18, 2011
Page 1 of 8
Free Datasheet http://www.datasheet4u.com/

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NE3520S03 N-Channel GaAs HJ-FET NE3520S03
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