NE3519M04 Datasheet PDF - Renesas

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NE3519M04
Renesas

Part Number NE3519M04
Description N-channel GaAs HJ-FET
Page 13 Pages


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PreliminaryData Sheet
NE3519M04
R09DS0008EJ0100
Rev.1.00
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier Oct 21, 2010
FEATURES
Low noise figure and high associated gain
NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
Satellite radio (SDARS, etc.)
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity Marking
Supplying Form
NE3519M04-T2
NE3519M04-T2B
NE3519M04-T2-A
NE3519M04-T2B-A
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
3 kpcs/reel
15 kpcs/reel
V85 Embossed tape 8 mm wide
Pin 1 (Source), Pin 2 (Drain)
face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3519M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage VGS 3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
200
150
Channel Temperature
Tch +150
Storage Temperature
Tstg 65 to +150
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 1 of 11
Free Datasheet http://www.datasheet4u.com/

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NE3519M04 N-channel GaAs HJ-FET NE3519M04
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