NE3519M04 Datasheet PDF - Renesas

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NE3519M04
Renesas

Part Number NE3519M04
Description N-channel GaAs HJ-FET
Page 13 Pages


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PreliminaryData Sheet
NE3519M04
R09DS0008EJ0100
Rev.1.00
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier Oct 21, 2010
FEATURES
Low noise figure and high associated gain
NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
Satellite radio (SDARS, etc.)
Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity Marking
Supplying Form
NE3519M04-T2
NE3519M04-T2B
NE3519M04-T2-A
NE3519M04-T2B-A
Flat-lead 4-pin
thin-type super
minimold (M04)
(Pb-Free)
3 kpcs/reel
15 kpcs/reel
V85 Embossed tape 8 mm wide
Pin 1 (Source), Pin 2 (Drain)
face the perforation side of
the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3519M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage VGS 3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG
Ptot
200
150
Channel Temperature
Tch +150
Storage Temperature
Tstg 65 to +150
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 1 of 11
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NE3519M04
RECOMMENDED OPERATING RANGE (TA = +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
25
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
IGSO
IDSS
VGS (off)
gm
NF
Ga
Test Conditions
VGS = 3.0 V
VDS = 2 V, VGS = 0 V
VDS = 2 V, ID = 50 μA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 2 GHz
MIN.
30
0.25
80
16.5
TYP.
0.5
45
0.50
0.40
18.5
MAX.
10
60
0.75
0.70
Unit
μA
mA
V
mS
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25°C, unless otherwise
specified)
Parameter
Gain 1 dB Compression Output
Power
Symbol
PO (1 dB)
Test Conditions
VDS = 2 V, ID = 10 mA set (Non-RF),
f = 2 GHz
Reference Value
+11
Unit
dBm
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 2 of 11
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NE3519M04
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
150
100
50
0 50 100 150 200 250
Ambient Temperature TA (°C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50
VDS = 2 V
45
40
35
30
25
20
15
10
5
0
–1.0 –0.8 –0.6 –0.4 –0.2
Gate to Source Voltage VGS (V)
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0 20
1.8 18
1.6 16
1.4
Ga
1.2
14
12
1.0 10
0.8 8
0.6 6
0.4 NFmin
4
0.2
VDS = 2 V 2
ID = 10 mA
0.0 0
0 2 4 6 8 10 12 14 16 18 20
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
60 VGS = 0 V
40 –0.1 V
–0.2 V
20
–0.3 V
–0.4 V
–0.5 V
0 12345
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
2.0 20
1.8 18
1.6 16
1.4
Ga
1.2
14
12
1.0 10
0.8 8
0.6
NFmin
0.4
6
4
0.2
VDS = 2 V 2
ID = 25 mA
0.0 0
0 2 4 6 8 10 12 14 16 18 20
Frequency f (GHz)
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 3 of 11
Free Datasheet http://www.datasheet4u.com/



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NE3519M04
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
f = 2.0 GHz, VDS = 2 V
1.4
20
18
1.2 Ga
16
1.0 14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
0 5 10 15 20 25 30
Drain Current ID (mA)
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
1.6
f = 2.0 GHz, ID = 10 mA
1.4
20
18
1.2 Ga
16
1.0 14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
1.0 1.5 2.0 2.5 3.0 3.5
Drain to Source Voltage VDS (V)
Remark The graphs indicate nominal characteristics.
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.6
f = 2.5 GHz, VDS = 2 V
1.4
20
18
1.2 Ga
1.0
16
14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
0 5 10 15 20 25 30
Drain Current ID (mA)
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DRAIN TO SOURCE VOLTAGE
1.6
f = 2.5 GHz, ID = 10 mA
1.4
20
18
1.2 16
Ga
1.0 14
0.8 12
0.6
0.4 NFmin
10
8
0.2 6
0.0 4
1.0 1.5 2.0 2.5 3.0 3.5
Drain to Source Voltage VDS (V)
R09DS0008EJ0100 Rev.1.00
Oct 21, 2010
Page 4 of 11
Free Datasheet http://www.datasheet4u.com/



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