NE3517S03 Datasheet PDF - Renesas

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NE3517S03
Renesas

Part Number NE3517S03
Description K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET
Page 11 Pages


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DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3517S03
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL GaAs HJ-FET
FEATURES
• Super low noise figure, high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
• K-band Micro-X plastic (S03) package
APPLICATIONS
• 20 GHz band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity Marking
Supplying Form
NE3517S03-T1C NE3517S03-T1C-A S03 (Pb-Free) 2 kpcs/reel
NE3517S03-T1D NE3517S03-T1D-A
10 kpcs/reel
E • 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3517S03
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
P Note
tot
Tch
Tstg
Ratings
4
3
IDSS
100
165
+125
65 to +125
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
mA
μA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PG10787EJ01V0DS (1st edition)
Date Published November 2009 NS
Printed in Japan
2009
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NE3517S03
RECOMMENDED OPERATING CONDITIONS (TA = +25°C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
1
5
TYP.
2
10
MAX.
3
15
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
Test Conditions
IGSO VGS = 3 V
IDSS VDS = 2 V, VGS = 0 V
VGS (off) VDS = 2 V, ID = 100 μA
gm VDS = 2 V, ID = 10 mA
NF VDS = 2 V, ID = 10 mA, f = 20 GHz
Ga
MIN.
25
0.2
40
11.0
TYP.
0.5
40
0.7
55
0.7
13.5
MAX.
10
70
1.5
1.0
Unit
μA
mA
V
mS
dB
dB
2 Data Sheet PG10787EJ01V0DS
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