NE3516S02 Datasheet PDF - Renesas

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NE3516S02
Renesas

Part Number NE3516S02
Description N-Channel GaAs HJ-FET
Page 10 Pages


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Data Sheet
NE3516S02
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
R09DS0038EJ0100
Rev.1.00
Apr 18, 2012
FEATURES
Low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
4-pin Micro-X plastic (S02) package
APPLICATIONS
X to Ku band DBS LNB
Other Ku band communication system
ORDERING INFORMATION
Part Number
Order Number Package Quantity Marking
Supplying Form
NE3516S02-T1C NE3516S02-T1C-A S02
2 kpcs/reel
NE3516S02-T1D NE3516S02-T1D-A package 10 kpcs/reel
(Pb-Free)
P • 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3516S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Drain to Source Voltage
VDS 4.0
Gate to Source Voltage
VGS –3.0
Drain Current
ID IDSS
Gate Current
Total Power Dissipation Note
IG 100
Ptot 165
Channel Temperature
Tch +125
Storage Temperature
Tstg –65 to +125
Note: Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Unit
V
V
mA
μA
mW
°C
°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
+1
5
TYP.
+2
10
MAX.
+3
15
0
Unit
V
mA
dBm
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0038EJ0100 Rev.1.00
Apr 18, 2012
Page 1 of 8
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NE3516S02
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
IGSO
IDSS
VGS(off)
gm
NF
Ga
Test Conditions
VGS = 3.0 V
VDS = 2 V, VGS = 0 V
VDS = 2V, ID = 100 μA
VDS = 2 V, ID = 10 mA
VDS = 2 V, ID = 10 mA, f = 12 GHz
MIN.
15
0.2
55
13
TYP.
0.5
30
0.5
65
0.35
14
MAX.
10
60
1.3
0.50
Unit
μA
mA
V
mS
dB
dB
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25°C, unless otherwise specified)
Parameter
Noise Figure
Associated Gain
Symbol
NF
Ga
Test Conditions
VDS = 2 V, ID = 6 mA, f = 12 GHz
Reference Value
0.35
13.5
Unit
dB
dB
R09DS0038EJ0100 Rev.1.00
Apr 18, 2012
Page 2 of 8
Free Datasheet http://www.datasheet4u.com/



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NE3516S02
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Eploxy PCB
200 (1.08 cm2 × 1.0 mm (t) )
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
60
VDS = 2 V
50
165
40
150
30
100
20
50 10
0
0 50 100 150 200 250
Ambient Temperature TA (°C)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.2
f = 12 GHz
1.1 VDS = 2 V
1.0
Ga
16
15
14
0.9 13
0.8 12
0.7 11
0.6 10
0.5 9
0.4 8
NFmin
0.3 7
0.2 6
2 4 6 8 10 12
Drain Current ID (mA)
0
–0.8
–0.6
–0.4
–0.2
Gate to Source Voltage VGS (V)
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
60
50
40
30
20
10
0
0.00
VGS = 0 V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
1.00
2.00
3.00
Drain to Source Voltage VDS (V)
4.00
Remark The graph indicates nominal characteristics.
R09DS0038EJ0100 Rev.1.00
Apr 18, 2012
Page 3 of 8
Free Datasheet http://www.datasheet4u.com/



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NE3516S02
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import to
microwave circuit simulators without keyboard inputs.
Click here to download S-parameters.
[Products] [RF Devices] [Device Parameters]
URL http://www.renesas.com/products/microwave/download/parameter/
R09DS0038EJ0100 Rev.1.00
Apr 18, 2012
Page 4 of 8
Free Datasheet http://www.datasheet4u.com/



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