NE3510M04 Datasheet PDF - CEL

www.Datasheet-PDF.com

NE3510M04
CEL

Part Number NE3510M04
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR
Page 11 Pages


NE3510M04 datasheet pdf
Download PDF
NE3510M04 pdf
View PDF for Mobile


No Preview Available !

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain
NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA
NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3510M04
NE3510M04-A
Flat-lead 4-pin thin- 50 pcs (Non reel) V81 • 8 mm wide embossed taping
NE3510M04-T2 NE3510M04-T2-A type super minimold 3 kpcs/reel
(M04) (Pb-Free)
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04-A
ABSOLUTE MAXIMUM RATINGS (TA = +25$C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
P Note
tot
Tch
Tstg
Ratings
4.0
<3.0
IDSS
140
125
+150
<65 to +150
Note Mounted on 1.08 cm2 = 1.0 mm (t) glass epoxy PCB
Unit
V
V
mA
+A
mW
$C
$C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. PG10676EJ01V0DS (1st edition)
Date Published July 2007 NS
2007
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

NE3510M04
RECOMMENDED OPERATING CONDITIONS (TA = +25$C)
Parameter
Drain to Source Voltage
Drain Current
Input Power
Symbol
VDS
ID
Pin
MIN.
<
<
<
TYP.
2
15
<
MAX.
3
30
0
Unit
V
mA
dBm
ELECTRICAL CHARACTERISTICS (TA = +25$C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Gain 1 dB Compression
Output Power
Symbol
Test Conditions
IGSO VGS = <3 V
IDSS VDS = 2 V, VGS = 0 V
VGS (off) VDS = 2 V, ID = 100 +A
gm VDS = 2 V, ID = 15 mA
NF VDS = 2 V, ID = 15 mA, f = 4 GHz
Ga
PO (1 dB) VDS = 2 V, ID = 15 mA (Non-RF),
f = 4 GHz
MIN.
<
42
<0.35
70
<
14.5
<
TYP.
0.5
70
<0.7
<
0.45
16
+11
MAX.
10
97
<1.10
<
0.65
<
<
Unit
+A
mA
V
mS
dB
dB
dBm
2 Data Sheet PG10676EJ01V0DS
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

NE3510M04
TYPICAL CHARACTERISTICS (TA = +25$C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 = 1.0 mm (t) )
200
150
100
50
0 50 100 150 200 250
Ambient Temperature TA ($C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
VDS = 2 V
90
80
70
60
50
40
30
20
10
0
–1.0 –0.8
–0.6
–0.4
–0.2
Gate to Source Voltage VGS (V)
0
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. FREQUENCY
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Ga
NFmin
5
24
VDS = 2 V
ID = 15 mA
22
20
18
16
14
12
10
8
6
4
2
0
10 15
Frequency f (GHz)
100
90
80
70
60
50
40
30
20
10
0
0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 0 V
–0.1 V
–0.2 V
–0.3 V
–0.4 V
–0.5 V
–0.6 V
–0.7 V
12345
Drain to Source Voltage VDS (V)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.2
1.1
f = 2.0 GHz
VDS = 2 V
1.0
0.9
Ga
24
22
20
18
0.8 16
0.7 14
0.6 12
0.5 10
0.4
0.3 NFmin
8
6
0.2 4
0.1 2
0.0 0
0 5 10 15 20 25 30 35
Drain Current ID (mA)
MINIMUM NOISE FIGURE,
ASSOCIATED GAIN vs. DRAIN CURRENT
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
24
f = 4.0 GHz
VDS = 2 V
22
20
18
Ga
16
14
12
10
NFmin
8
6
4
2
0
5 10 15 20 25 30 35
Drain Current ID (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10676EJ01V0DS
3
Free Datasheet http://www.datasheet4u.com/



No Preview Available !

OUTPUT POWER, GAIN, DRAIN CURRENT,
GATE CURRENT vs. INPUT POWER
20
f = 4 GHz, VDS = 2 V
ID = 15 mA set (Non-RF)
Gain
15
Pout (1 tone)
10
60
50
40
5 30
0 20
–5 ID
IG
–10
–20
–15 –10
–5
0
5
Input Power Pin (1 tone) (dBm)
10
10
0
15
OUTPUT POWER, IM3, DRAIN CURRENT
vs. INPUT POWER
30
f = 4 GHz, VDS = 2 V
20 ID = 15 mA set (Non-RF)
OIP3 = +20 dBm
Pout
10
50
45
40
0 35
IIP3 = +4 dBm
–10 30
–20
IM3 (L)
IM3 (H)
25
–30 20
–40 15
–50 ID 10
–60 5
–70
–40
–30 –20 –10
Input Power Pin (1 tone) (dBm)
0
0
10
Remark The graphs indicate nominal characteristics.
NE3510M04
4 Data Sheet PG10676EJ01V0DS
Free Datasheet http://www.datasheet4u.com/



NE3510M04 datasheet pdf
Download PDF
NE3510M04 pdf
View PDF for Mobile


Related : Start with NE3510M0 Part Numbers by
NE3510M04 HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04
CEL
NE3510M04 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact