NCE40H21C Datasheet PDF - NCE Power Semiconductor

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NCE40H21C
NCE Power Semiconductor

Part Number NCE40H21C
Description N-Channel Enhancement Mode Power MOSFET
Page 7 Pages


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Pb Free Product
NCE40H21C
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE40H21C uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =40V ,ID =210A
RDS(ON) < 2.5m@ VGS=10V
Schematic diagram
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE40H21C
NCE40H21C
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Limit
40
±20
210
148
840
310
2.07
1800
Unit
V
V
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE40H21C
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.48 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
40
-V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
IDSS
VDS=40V,VGS=0V
- - 1 μA
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V, ID=40A
23
- 1.8
4
2.5
V
m
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=24V,ID=40A
160 -
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 7800
- 1144
-
-
PF
PF
Crss
- 820
-
PF
Turn-on Delay Time
td(on)
- 40
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
VDD=30V,ID=2A,RL=15,
-
38
-
td(off)
RG=2.5,VGS=10V
- 140
-
nS
nS
Turn-Off Fall Time
tf
- 60
-
nS
Total Gate Charge
Gate-Source Charge
Qg - 215
Qgs ID=30A,VDD=30V,VGS=10V -
41
-
-
nC
nC
Gate-Drain Charge
Qgd
- 83
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=40A
- 0.85 1.2
V
IS
- - 210
A
trr
TJ = 25°C, IF = 40A
- 47
Qrr
di/dt = 100A/μs(Note3)
- 76
nS
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=20V,VG=10V,L=1mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
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Test circuit
1EAS test Circuits
Pb Free Product
NCE40H21C
2Gate charge test Circuit:
3Switch Time Test Circuit
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics (Curves)
Pb Free Product
NCE40H21C
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
TJ-Junction Temperature()
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
Qg Gate Charge (nC)
Figure 5 Gate Charge
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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