NCE2004NE Datasheet PDF - NCE Power Semiconductor

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NCE2004NE
NCE Power Semiconductor

Part Number NCE2004NE
Description N-Channel Enhancement Mode Power MOSFET
Page 7 Pages


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Pb Free Product
NCE2004NE
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2004NE uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested.
General Features
VDS = 20V,ID =6A
RDS(ON) < 30m@ VGS=2.5V
RDS(ON) < 24m@ VGS=4.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface mount package
Schematic diagram
Application
PWM application
Load switch
Marking and pin assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2004NE
NCE200N4NE
SOT23-6L
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
20
±12
6
30
1.25
-55 To 150
100
Unit
V
V
A
A
W
/W
Wuxi NCE Power Semiconductor Co., Ltd
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Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=20V,VGS=0V
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS VGS=±10V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
RDS(ON)
gFS
VGS=4.5V, ID=6A
VGS=2.5V, ID=5A
VDS=5V,ID=6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=10V,RL=1. 5
VGS=5V,RGEN=3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=10V,ID=6A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD VGS=0V,IS=1A
IS
Pb Free Product
NCE2004NE
Min Typ Max Unit
20 - V
- - 1 μA
- - ±10 μA
0.45 0.7
- 17
- 22
- 20
1.0
24
30
-
V
m
m
S
- 650
- 140
- 60
-
-
-
PF
PF
PF
- 0.5
-1
- 12
-4
-8
- 2.5
-3
-
-
nS
nS
nS
nS
nC
nC
nC
- - 1.2
--
6
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics
Vdd
Rl
Vin
D Vout
Vgs Rgen
G
S
Figure 1:Switching Test Circuit
Pb Free Product
NCE2004NE
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
Vds Drain-Source Voltage (V)
Figure 4 Safe Operation Area
Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE2004NE
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
TJ-Junction Temperature()
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Figure 9 Rdson vs Vgs
Vds Drain-Source Voltage (V)
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Figure 11 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 12 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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