MUSES01 Datasheet PDF - New Japan Radio


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MUSES01
New Japan Radio

Part Number MUSES01
Description Dual Operational Amplifier
Page 12 Pages

MUSES01 datasheet pdf
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MUSES01www.DataSheet4U.com
High Quality Audio , J-FET Input,
Dual Operational Amplifier
The MUSES01 is a dual J-FET input high quality audio operational amplifier, which is optimized for high-end audio and
professional audio applications with advanced circuitry and layout, unique material and assembled technology by
skilled-craftwork.
It is the best for audio preamplifiers, active filters, and line amplifiers with excellent sound.
 FEATURES
Operating Voltage
Output noise
Input Offset Voltage
Input Bias Current
Voltage Gain
Slew Rate
Bipolar Technology
Package Outline
Vopr=±9V to ±16V
9.5nV/Hz at f=1kHz
0.8mV typ. 5mV max.
200pA typ. 800pA max. at Ta=25°C
105dB typ.
12V/μs typ.
DIP8
 PIN CONFIGURATION
1
2 -+
3 +-
4
PIN FUNCTION
8 1. A OUTPUT
2. A -INPUT
7 3. A +INPUT
4. V-
6 5. B +INPUT
5
6. B -INPUT
7. B OUTPUT
8.V+
 PACKAGE OUTLINE
MUSES01D
Ver.2009-12-18
MUSES and this logo are trademarks of New Japan Radio Co., Ltd.
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MUSES01
 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Supply Voltage
SYMBOL
V+/V-
RATING
±18
UNIT
V
Common Mode Input Voltage
VICM
±15 (Note1)
V
Differential Input Voltage
VID
±30
V
Power Dissipation
PD 910 mW
Output Current
IO ±25 mA
Operating Temperature Range
Topr
-40 to +85
°C
Storage Temperature Range
Tstg
-50 to +150
°C
(Note1) For supply Voltages less than ±15 V, the maximum input voltage is equal to the Supply Voltage.
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 RECOMMENDED OPERATING CONDITION (Ta=25°C)
PARAMETER
SYMBOL
TEST CONDITION
Supply Voltage
V+/V-
-
MIN. TYP. MAX. UNIT
±9 - ±16 V
 ELECTRIC CHARACTERISTICS
DC CHARACTERISTICS (V+/V-=±15V, Ta=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
MIN. TYP.
Operating Current
Icc No Signal, RL=
- 8.5
Input Offset Voltage
VIO Rs10kΩ (Note2, 3)
- 0.8
Input Bias Current
IB (Note2, 3)
- 200
Input Offset Current
IIO (Note2, 3)
- 100
Voltage Gain
AV RL2k, Vo=±10V
90 105
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Max Output Voltage 1
CMR
SVR
VOM1
VICM=±8V (Note4)
V+/V-=±9.0 to ±16.0V
(Note2, 5)
RL=10k
60 75
70 83
±12 ±13.5
Max Output Voltage 2
VOM2
RL=2k
±10 ±12.5
Input Common Mode Voltage
Range
VICM
CMR60dB
±8 ±9.5
(Note2) Measured at VICM=0V
(Note3) Written by the absolute rate.
(Note4) CMR is calculated by specified change in offset voltage. (VICM=0V to +8V and VICM=0V to 8V)
(Note5) SVR is calculated by specified change in offset voltage. (V+/V=±9V to ±16V)
MAX.
12.0
5.0
800
400
-
-
-
-
-
-
UNIT
mA
mV
pA
pA
dB
dB
dB
V
V
V
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AC CHARACTERISTICS (V+/V-=±15V, Ta=25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITION
Gain Bandwidth Product
GB f=10kHz
Unity Gain Frequency
Phase Margin
Input Noise Voltage1
Input Noise Voltage2
Total Harmonic Distortion
Channel Separation
Positive Slew Rate
Negative Slew Rate
fT
φM
VNI
VN2
THD
CS
+SR
-SR
AV=+100, RS=100,
RL=2k, CL=10pF
AV=+100, RS=100,
RL=2k,CL=10pF
f=1kHz, AV=+100,
RS=100
RIAA, RS =2.2k,
30kHz LPF
f=1kHz, AV=+10,
RL=2k, Vo=5Vrms
f=1kHz, AV=-+100, RS=1k,
RL=2k
AV=1, VIN=2Vp-p,
RL=2k, CL=10pF
AV=1, VIN=2Vp-p,
RL=2k, CL=10pF
MIN. TYP. MAX. UNIT
- 3.3 - MHz
- 3.0 - MHz
- 60 - deg
- 9.5 - nV/Hz
- 1.2 3.0 μVrms
- 0.002 -
%
- 150 -
dB
- 12 - V/μs
- 13 - V/μs
Ver.2009-12-18
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MUSES01
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 Application Notes
Package Power, Power Dissipation and Output Power
IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called
Power Dissipation PD. The dependence of the MUSES01 PD on ambient temperature is shown in Fig 1. The plots are
depended on following two points. The first is PD on ambient temperature 25°C, which is the maximum power dissipation.
The second is 0W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature
Tjmax to the storage temperature Tstg derives this point. Fig.1 is drawn by connecting those points and conforming the PD
lower than 25°C to it on 25°C. The PD is shown following formula as a function of the ambient temperature between those
points.
Dissipation Power PD =
Tjmax - Ta
θja
[W] (Ta=25°C to Ta=150°C)
Where, θja is heat thermal resistance which depends on parameters such as package material, frame material and so on.
Therefore, PD is different in each package.
While, the actual measurement of dissipation power on MUSES01 is obtained using following equation.
(Actual Dissipation Power) = (Supply Voltage VDD) X (Supply Current IDD) – (Output Power Po)
The MUSES01 should be operated in lower than PD of the actual dissipation power.
To sustain the steady state operation, take account of the Dissipation Power and thermal design.
PD [mW]
DIP8
910
Ta [deg]
-40 25 85 150
(Topr max.) (Tstg max.)
Fig.1 Power Dissipations vs. Ambient Temperature on the MUSES01
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Ver.2009-12-18




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