MTN1308E3 Datasheet PDF - Cystech


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MTN1308E3
Cystech

Part Number MTN1308E3
Description N-Channel Enhancement Mode Power MOSFET
Page 6 Pages

MTN1308E3 datasheet pdf
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CYStech Electronics Corp.
Spec. No. : C440E3
Issued Date : 2009.02.23
Revised Date :
Page No. : 1/6
N-Channel Enhancement Mode Power MOSFET
MTN1308E3
BVDSS
RDSON
ID
75V
13 mΩ
80A
Description
The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
www.DataSheet.net/
Symbol
MTN1308E3
Outline
TO-220
GGate
DDrain
SSource
MTN1308E3
GDS
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.co.kr/



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CYStech Electronics Corp.
Spec. No. : C440E3
Issued Date : 2009.02.23
Revised Date :
Page No. : 2/6
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V (Note 1)
Avalanche Current
Single Pulse Avalanche Energy @ L=0.5mH, ID=40 A, RG=25Ω
Repetitive Avalanche Energy @ L=0.1mH (Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Total Power Dissipation (TC=25)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1.Pulse width limited by maximum junction temperature.
*2. Duty 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
TL
Limits
75
±30
80
55
200
40
400
80
300
Unit
V
V
A
A
A
A
mJ
°C
TPKG
260
Pd 230
1.87
Tj, Tstg -55~+175
°C
W
W/°C
°C
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Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.65
62.5
Unit
°C/W
°C/W
MTN1308E3
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.co.kr/



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CYStech Electronics Corp.
Spec. No. : C440E3
Issued Date : 2009.02.23
Revised Date :
Page No. : 3/6
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
IDON
RDS(ON)
GFS
75 -
-V
1.5 2.5 4.0
V
-
-
±100
nA
- - 1 μA
- - 25 μA
80 -
-A
- 10.5 13 mΩ
- 38 -
S
Dynamic
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Rg
- 42 -
- 19 -
- 17 -
- 25 -
- 200 -
- 100 -
- 120 -
- 10587 -
- 340 -
- 242 -
-2-
nC
ns
pF
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Ω
Source-Drain Diode
IS - - 80
ISM - - 200
VSD - - 1.3
trr - 120 -
Qrr - 380 -
Note : 1. Pulse Test : Pulse Width 300μs, Duty Cycle2%
2. Independent of operating temperature
3. Pulse width limited by maximum junction temperature.
A
V
ns
nC
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VGS=±30
VDS =60V, VGS =0
VDS =50V, VGS =0, Tj=125°C
VDS =10V, VGS=10V
(Note 1)
VGS =10V, ID=30A
(Note 1)
VDS =5V, ID=30A
(Note 1)
VDS=80V, ID=30A, VGS=10V
(Note 1 & 2)
VDS=50V, ID=1A, VGS=10V,
RGS=6Ω (Note 1 & 2)
VGS=0V, VDS=25V, f=1MHz
VGS=15mV, VDS=0V, f=1MHz
IS=80A, VGS=0V
(Note 3)
(Note 1)
VGS=0, IF=25A, dIF/dt=100A/μs
Ordering Information
Device
MTN1308E3
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Marking
13N08
MTN1308E3
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.co.kr/



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CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C440E3
Issued Date : 2009.02.23
Revised Date :
Page No. : 4/6
www.DataSheet.net/
MTN1308E3
CYStek Product Specification
Datasheet pdf - http://www.DataSheet4U.co.kr/




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