MT8103 Datasheet PDF - MOS-TECH


www.Datasheet-PDF.com

MT8103
MOS-TECH

Part Number MT8103
Description P-Channel Enhancement Mode Field Effect Transistor
Page 6 Pages

MT8103 datasheet pdf
View PDF for PC
MT8103 pdf
View PDF for Mobile


No Preview Available !

MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
MT8103
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
VDS= -30V
ID= -13A (VGS= -10V)
≦ ΩRDS(ON) 10m @VGS= -10V
≦ ΩRDS(ON) 15.5m @VGS= -4.5V
Applications
▪ Notebook Computer
▪ Portable Battery Pack
Features
Advanced Trench Process Technology.
High Density Cell Design for Ultra Low
On-Resistance.
Lead free product is acquired.
RoHS Compliant.
Absolute Maximum Ratings (TA = 25 unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Maximum Power Dissipation 1
Operating Junction and Storage Temperature Range
10s Steady State
-30
±20
-13 -9
-50
-2.7 -1.36
3.0 1.5
-55 to 150
Units
V
V
A
A
A
W
Thermal Resistance Ratings
Symbol
Parameter
RthJA
Maximum Junction-to-Ambient 1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Rev2.0 Mar-28-2013
t 10 Sec
Steady State
Typical
33
70
Maximum
42
82
Unit
/W
www.mtsemi.com
Page 1 of 6



No Preview Available !

MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
VGS(th) Gate Threshold Voltage
VGS = VDS, ID = -250µA
IGSS Gate-Body Leakage Current
VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70
RDS(on) Drain Source On State Resistance a
gfs Forward Transconductance a
VSD Diode Forward Voltage a
Dynamic Characteristics b
VGS = -10V, ID = -13A
VGS = -4.5V, ID = -10A
VDS = -15V, ID = -13A
IS = -2.7A, VGS = 0V
Ciss Input Capacitance
Coss Output Capacitance
VDS = -15V, VGS = 0V, f = 1MHz
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = -15V, VGS = -5V, ID = -13A
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Rise Time
VDD = -15V, RL = 15Ω
Td(off)
Turn-Off Delay Time
ID = -1A, VGEN = -10V, RG = 6Ω
tf Fall Time
Rg Gate Resistance
VGS = 0, VDS = 0, f = 1MHz
trr Source-Drain Reverse Recovery Time IF = -2.1A, di/dt = 100A/µs
Note:
≦ ≦a. Pulse test; pulse width 300µs, duty cycle 2%.
b. Guaranteed by design, not subject to production testing.
MT8103
Min Typ Max Unit
-30 -
-V
-1.0 -1.5 -3.0
V
- - ±100 nA
- - -1
µA
- -10
- 8.5 10
mΩ
- 12.5 15.5
- 40 - S
- -0.74 -1.1 V
- 3340.0 -
- 577.0 -
pF
- 426.0 -
- 37.0 -
- 10.0 - nC
- 11.0 -
- 19.5 -
- 10.0 -
nSec
- 137.5 -
- 55.3 -
- 3.4 - Ω
- 60 100 nSec
Rev2.0 Mar-28-2013
www.mtsemi.com
Page 2 of 6



No Preview Available !

MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
MT8103
Characteristics Curve (TA=25°C, unless otherwise noted)
50
VGS = 10 V thru 4 V
40
50
40
30 30
20
10
0
0
0.020
3V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
20
10
0
0.0
TC = 125 °C
25 °C
- 55 °C
0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4.0
5500
0.016
0.012
0.008
VGS = 4.5 V
VGS = 10 V
4400
3300
2200
Ciss
0.004
0.000
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
6
VDS = 15 V
5 ID = 13 A
4
3
2
1
0
0 10 20 30 40 50
Qg - Total Gate Charge (nC)
Gate Charge
1100
0
0
Crss
Coss
6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 13 A
1.4
30
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Rev2.0 Mar-28-2013
www.mtsemi.com
Page 3 of 6



No Preview Available !

MOS-TECH Semiconductor Co.,LTD
茂鈿半導體股份有限公司
MT8103
Characteristics Curve (TA=25°C, unless otherwise noted)
50
0.030
TJ = 150 °C
10
0.024
0.018
ID = 13 A
1 0.012
TJ = 25 °C
0.006
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.8
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
0.6
ID = 250 µA
0.4
0.2
0.0
- 0.2
- 0.4
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
Limited by RDS(on) *
10
1
0.1 TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 - 4
Single Pulse
10 - 3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 - 2
10 - 1
1
10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Rev2.0 Mar-28-2013
www.mtsemi.com
Page 4 of 6




MT8103 datasheet pdf
Download PDF
MT8103 pdf
View PDF for Mobile


Similiar Datasheets : MT8102 MT8103

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact