MRFG35003N6T1 Datasheet PDF - Freescale Semiconductor

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MRFG35003N6T1
Freescale Semiconductor

Part Number MRFG35003N6T1
Description POWER FET GaAs PHEMT
Page 12 Pages


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Freescale Semiconductor
Technical Data
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Character-
ized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,
IDQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
3 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
www.DataShIneeTta4pUe.caonmd Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Document Number: MRFG35003N6
Rev. 5, 1/2006
MRFG35003N6T1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
PD
8
22.7 (2)
0.15 (2)
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature (1)
Operating Case Temperature Range
Table 2. Thermal Characteristics
VGS
-5
Pin 24
Tstg - 65 to +150
Tch 175
TC - 20 to +85
Characteristic
Symbol
Value
Thermal Resistance, Junction to Case
Table 3. Moisture Sensitivity Level
RθJC
6.6 (2)
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Simulated.
260
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Unit
°C/W
Unit
°C
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35003N6T1
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Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
IDSS
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
Off State Drain Current
(VDS = 6 Vdc, VGS = - 1.9 Vdc)
IDSO
Off State Current
(VDS = 20 Vdc, VGS = - 2.5 Vdc)
IDSX
Gate- Source Cut - off Voltage
(VDS = 3.5 Vdc, IDS = 15 mA)
VGS(th)
Quiescent Gate Voltage
(VDS = 6 Vdc, IDQ = 180 mA)
VGS(Q)
Power Gain
www.Da(tVaDSDhe=e6t4VUd.cc,oIDmQ = 180 mA, f = 3.55 GHz)
Output Power, 1 dB Compression Point
(VDD = 6 Vdc, IDQ = 180 mA, f = 3.55 GHz)
Gps
P1dB
Drain Efficiency
(VDD = 6 Vdc, IDQ = 180 mA, Pout = 450 mW, f = 3.55 GHz.
Tune for Maximum Pout)
hD
Adjacent Channel Power Ratio
(VDD = 6 Vdc, Pout = 450 mW Avg., IDQ = 180 mA,
f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability,
64 CH, 3.84 MCPS)
ACPR
Min
- 1.2
- 1.1
8
22
Typ
2.9
< 1.0
0.02
1.0
- 1.0
- 0.9
9
3
24
- 42
Max Unit
— Adc
100 μAdc
1.0 mAdc
15 mAdc
- 0.7 Vdc
- 0.7 Vdc
— dB
—W
—%
- 38 dBc
MRFG35003N6T1
2
RF Device Data
Freescale Semiconductor



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VGS
C11 C10 C9 C8 C7 C6 C5
R1
C3 C4
VDD=6.0
C16 C17 C18 C19 C20 C21 C22
C14 C15
RF
INPUT
Z1
Z2
C1
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Z5
C2
Z3 Z4
C12
Z6 Z7
C28 C27
Z10
C13
Z8 Z9
C23
Z11 Z12 Z13
RF
OUTPUT
Z14
C24
C26 C25
Z1, Z14
Z2
Z3
Z4
Z5, Z10
Z6
Z7
0.044x 0.125Microstrip
0.440x 0.105Microstrip
0.340x 0.357Microstrip
0.380x 0.426Microstrip
0.527x 0.015Microstrip
0.027x 0.347Microstrip
0.538x 0.115Microstrip
Z8
Z9
Z11
Z12
Z13
PCB
0.439x 0.136Microstrip
0.062x 0.280Microstrip
0.349x 0.302Microstrip
0.055x 0.130Microstrip
0.044x 0.502Microstrip
Rogers 4350, 0.020, εr = 3.50
Figure 1. 3.5 GHz Test Circuit Schematic
Table 5. 3.5 GHz Test Circuit Component Designations and Values
Designation
C1
C2
C3, C4, C14, C15
C5, C16
C6, C17
C7, C18
C8, C19
C9, C20
C10, C21
C11, C22
C12, C13, C26, C27
C23, C25, C28
C24
R1
Description
12 pF Chip Capacitor, ATC
0.1 pF Chip Capacitor (0805), AVX
3.9 pF Chip Capacitors (0805), AVX
10 pF Chip Capacitors, ATC
100 pF Chip Capacitors, ATC
100 pF Chip Capacitors, ATC
1000 pF Chip Capacitors, ATC
3.9 μF Chip Capacitors, ATC
0.1 μF Chip Capacitors, ATC
22 μF, 35 V Tantalum Surface Mount Capacitor, Newark
0.3 pF Chip Capacitors (0805), AVX
1.0 pF Chip Capacitors (0805), AVX
7.5 pF Chip Capacitor, ATC
50 W Chip Resistor, Newark
RF Device Data
Freescale Semiconductor
MRFG35003N6T1
3



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+
C11
C10 C9 C8
C3
C7
C6
C5
R1
C4
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C1
C28
C12
C2
C27
C18
+
C17 C19 C20 C21
C22
C16
C14 C15
C13
C23
C24
C26 C25
MRFG35003M6
Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 3.5 GHz Test Circuit Component Layout
MRFG35003N6T1
4
RF Device Data
Freescale Semiconductor



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