MRF555 Datasheet PDF - Motorola


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MRF555
Motorola

Part Number MRF555
Description NPN SILICON RF LOW POWER TRANSISTOR
Page 6 Pages

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF555/D
The RF Line
NPN Silicon
RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF
frequency range.
Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
MRF555
1.5 W, 470 MHz
RF LOW POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO 16 Vdc
Collector–Base Voltage
VCBO 36 Vdc
Emitter–Base Voltage
VEBO 4.0 Vdc
Collector Current — Continuous
IC 400 mAdc
Operating Junction Temperature
TJ 150 °C
Total Device Dissipation @ TC = 75°C (1, 2)
Derate above 75°C
Storage Temperature Range
PD 3.0 Watts
40 mW/°C
Tstg – 55 to +150 °C
CASE 317D–02, STYLE 2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V(BR)CEO
16
— Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
V(BR)CES
36
— Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V(BR)EBO
4.0
— Vdc
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ICES
— 0.1 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
hFE 50 90 200 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob — 3.5 5.0 pF
NOTES:
(continued)
1. TC, Case temperature measured on collector lead immediately adjacent to body of package.
2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF555
1



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ELECTRICAL CHARACTERISTICS — continued (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
FUNCTIONAL TESTS (f = 470 MHz)
Common–Emitter Power Gain
(VCC = 12.5 Vdc, Pout = 1.5 W)
Gpe 11 12.5 — dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 1.5 W)
ηc 50 60 — %
Load Mismatch Stress
(VCC = 15.5 Vdc, Pin = 125 mW,
VSWR 10:1 all phase angles)
ψ
No Degradation in Output Power
RF
POWER
INPUT
B
L1
Z1 Z2
L2
C1 C4
C2 C3
C7
L3
D.U.T.
L5
B
C8
+
C9
L4
Z3
C5
+
VCC
C6
RF
POWER
OUTPUT
*C1, C3, C6 — 0.8 – 11 pF Johanson
C2 — 15 pF Clamped Mica, Mini–Underwood
C4 — 36 pF Clamped Mica, Mini–Underwood
C5 — 470 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 68 pF Clamped Mica, Mini–Underwood
C9 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
*Fixed tuned for broadband response
L1 — 5 Turns #21 AWG, 5/32I.D.
L2, L3 — 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick
L2, L3 — Alumina Substrate
L4, L5 — 7 Turns #21 AWG 5/32I.D.
Z1 — 1.29x 0.16Microstrip
Z2 — 0.70x 0.16Microstrip
Z3 — 2.18x 0.16Microstrip
PCB — 1/16Glass Teflon, 1 oz. cu. clad,
PCB — double sided, εr = 2.5
Figure 1. 400 – 512 MHz Broadband Circuit
MRF555
2
20
Pout = 1.5 W
VCC = 12.5 Vdc
16
Gpe
12
ηc
65
60
8 55
4 IRL 10
15
0 20
400 425 450 475 500 525
f, FREQUENCY (MHz)
Figure 2. Performance in Broadband Circuit
MOTOROLA RF DEVICE DATA



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Zin
Ohms
ZOL*
Ohms
f
Frequency
MHz
400
VCC = 7.5 V
Pin = 100 mW
2.9 – j2.7
VCC = 12.5 V
Pin = 50 mW
1.9 – j3.1
VCC = 7.5 V
Pout 400 MHz = 1.5 W
Pout 450 MHz = 1.35 W
Pout 512 MHz = 1.05 W
18.0 – j13.4
VCC = 12.5 V
Pout 400 MHz = 1.9 W
Pout 450 MHz = 1.45 W
Pout 512 MHz = 0.9 W
12.2 – j19.7
450
2.2 – j0.8
2.6 – j4.0
21.6 = j9.9
20.2 – j18.6
512
3.5 – j1.2
2.6 – j2.6
20.1 – j1.0
23.4 – j23.0
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Table 1. Zin and ZOL versus Collector Voltage, Input Power and Output Power
MOTOROLA RF DEVICE DATA
MRF555
3



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2.5 2.5
VCC = 7.5 Vdc
2
VCC = 12.5 Vdc
2
Pin = 150 mW
1.5 1.5
7.5 Vdc
100 mW
11
50 mW
0.5 0.5
0
0
50 100
150 200
Pin, POWER INPUT (mW)
Figure 3. Power Output versus Power Input
0
400 425 450 475 500 525
f, FREQUENCY (MHz)
Figure 4. Power Output versus Frequency
44
VCC = 12.5 Vdc
Pin = 150 mW
f = 400 MHz
3 3 100 mW
Pin = 150 mW
22
100 mW
50 mW
11
50 mW
0
400 425 450 475 500 525
f, FREQUENCY (MHz)
Figure 5. Power Output versus Frequency
0
6 8 10 12 14 16
VCC, SUPPLY VOLTAGE (Vdc)
Figure 6. Power Output versus Supply Voltage
4
f = 450 MHz
3
2
1
Pin = 150 mW
100 mW
50 mW
4
f = 512 MHz
3
2
1
Pin = 150 mW
100 mW
50 mW
0
6 8 10 12 14 16
VCC, SUPPLY VOLTAGE (Vdc)
Figure 7. Power Output versus Supply Voltage
0
6 8 10 12 14 16
VCC, SUPPLY VOLTAGE (Vdc)
Figure 8. Power Output versus Supply Voltage
MRF555
4
MOTOROLA RF DEVICE DATA




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