MRF19120S Datasheet PDF - Motorola

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MRF19120S
Motorola

Part Number MRF19120S
Description RF POWER FIELD EFFECT TRANSISTORS
Page 12 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF19120/D
The RF Sub–Micron MOSFET Line
RF Powerwww.DataSheet4U.com Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
MRF19120
MRF19120S
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
CDMA Performance @ 1990 MHz, 26 Volts
IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — –47 dBc @ 30 kHz BW
1.25 MHz — –55 dBc @ 12.5 kHz BW
2.25 MHz — –55 dBc @ 1 MHz BW
Output Power — 15 Watts (Avg.)
Power Gain — 11.7 dB
Efficiency — 16%
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency, High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW)
Output Power
S–Parameter Characterization at High Bias Levels
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
1990 MHz, 120 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 375D–04, STYLE 1
NI–1230
MRF19120
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
CASE 375E–03, STYLE 1
NI–1230S
MRF19120S
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
–0.5, +15
389
2.22
–65 to +150
200
Class
1 (Minimum)
M3 (Minimum)
Max
0.45
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA
MRF19120 MRF19120S
1



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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
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Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
ON CHARACTERISTICS (1)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
Gate Quiescent Voltage
(VDS = 26 V, ID = 500 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 2 A)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
MRF19120
MRF19120S
V(BR)DSS
IGSS
IDSS
gfs
VGS(th)
VGS(Q)
VDS(on)
Crss
Gps
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
η
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
MRF19120
MRF19120S
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1990.0 MHz, f2 = 1990.1 MHz)
500 mA,
IRL
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
Gps
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
η
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
IMD
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
500 mA,
IRL
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, CW, IDQ = 2 500 mA, f1 = 1990.0 MHz)
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2
f1 = 1990.0 MHz)
500 mA,
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
P1dB
Gps
Min
65
2.5
3
10.7
10.5
30
Typ
4.8
3
3.9
0.38
2.8
11.7
11.7
34
–31
–31
–12
11.7
34
–31
–14
120
11
Max Unit
— Vdc
1 µAdc
10 µAdc
—S
3.8 Vdc
5 Vdc
0.5 Vdc
— pF
dB
—%
dB
–28
–27
–9 dB
— dB
—%
— dB
— dB
— Watts
— dB
MRF19120 MRF19120S
2
MOTOROLA RF DEVICE DATA



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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued)
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Drain Efficiency
η
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 500 mA,
f1 = 1990.0 MHz)
— 45 — %
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 500 mA,
f = 1990 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
(2) Device measured in push–pull configuration.
Ψ
No Degradation In Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
MRF19120 MRF19120S
3



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VGG
+
B1
C19 R3
C17 C16
+
C15
C14
C13
RF
INPUT
Z1
COAX1
Z2
COAX2
L1
Z4
Z6
R1 R5
Z8 Z10 Z12 C3 Z14 Z16 Z18 Z20 Z22
Z7
Z5
C1 C2 L2
C5
Z9 Z11 Z13 C4 Z15 Z17 Z19 Z21 Z23
R2 R6
+
C22 C20
VGG B2
+
R4
C25
C24 C23 C21
+
C31 C32 C33
VDD
+
++
C34 C35
+
C30 C28
+ Z40 Z41
C29 C27
C12
C7
Z24 Z26
L3
Z28 Z30 Z32 Z34 C9 Z36
Z42
RF
OUTPUT
DUT
C8
C11
Z25 Z27 Z29 Z31 Z33 Z35 C10 Z37
Z38
COAX3
COAX4
Z39
C6 L4
+
C37 C36
+
C39 C38
+
C40 C41
+
C42 C43
VDD
+
+
C44
B1, B2
C1, C2
C3, C4, C9, C10
C5, C12
C6, C7
C8
C11
C13, C20, C29, C37
C14, C21, C28, C38
C15, C22, C31, C40
C16, C23, C33, C43
C17, C24, C32, C41
C19, C25
C27, C34, C36, C42
C30, C39
C35, C44
Coax1, Coax2
Coax3, Coax4
L1
L2
L3, L4
R1, R2
R3, R4
R5, R6
Z1
Ferrite Beads, Fair Rite
0.6 – 4.5 pF Variable Capacitors, Johanson Gigatrim
10 pF Chip Capacitors, B Case, ATC
0.4 – 2.5 pF Variable Capacitors, Johanson Gigatrim
2.0 pF Chip Capacitors, B Case, ATC
1.1 pF Chip Capacitor, B Case, ATC
0.1 pF Chip Capacitor, B Case, ATC
5.1 pF Chip Capacitors, B Case, ATC
91 pF Chip Capacitors, B Case, ATC
100 µF, 50 V Electrolytic Capacitors, Sprague
0.039 µF Chip Capacitors, B Case, ATC
1000 pF Chip Capacitors, B Case, ATC
0.020 µF Chip Capacitors, B Case, ATC
22 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet
1.0 µF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet
470 µF, 63 V Electrolytic Capacitors, Sprague
25 , Semi Rigid Coax, 70 mil OD, 1.05Long
50 , Semi Rigid Coax, 85 mil OD, 1.05Long
5.0 nH, Minispring Inductor, Coilcraft
8.0 nH, Minispring Inductor, Coilcraft
5.60 nH, Microspring Inductors, Coilcraft
1 k, 1/2 W Fixed Metal Film Resistors, Dale
270 , 1/8 W Fixed Film Chip Resistors, Dale
1.0 k, 1/8 W Fixed Film Chip Resistors, Dale
0.150x 0.080Microstrip
Z2
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26, Z27
Z28, Z29
Z30, Z31
Z32, Z33
Z34, Z35
Z36, Z37
Z38, Z39
Z40
Z41
Z42
Board Material
Connectors
0.320x 0.080Microstrip
1.050x 0.080Microstrip
0.120x 0.080Microstrip
0.140x 0.080Microstrip
0.610x 0.080Microstrip
0.135x 0.080Microstrip
0.130x 0.080Microstrip
0.300x 0.350Microstrip
0.150x 0.500Microstrip
0.075x 0.500Microstrip
0.330x 0.500Microstrip
0.100x 0.550Microstrip
0.175x 0.550Microstrip
0.045x 0.550Microstrip
0.190x 0.325Microstrip
0.080x 0.325Microstrip
0.515x 0.080Microstrip
0.020x 0.080Microstrip
0.565x 0.080Microstrip
0.100x 0.080Microstrip
0.470x 0.080Microstrip
0.100x 0.080Microstrip
0.03Teflon, εr = 2.55 Copper
Clad, 2 oz. Cu
N–Type Panel Mount, Stripline
Figure 1. 1.93 – 1.99 GHz Broadband Test Circuit Schematic
MRF19120 MRF19120S
4
MOTOROLA RF DEVICE DATA



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