MPXV7025 Datasheet PDF - Freescale Semiconductor


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MPXV7025
Freescale Semiconductor

Part Number MPXV7025
Description Integrated Silicon Pressure Sensor
Page 10 Pages

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Freescale Semiconductor
+ Integrated Silicon Pressure Sensor
On-Chip Signal Conditioned,
Temperature Compensated and
Calibrated
The MPXV7025 series piezoresistive transducer is a state-of-the-art
monolithic silicon pressure sensor designed for a wide range of applications,
but particularly those employing a microcontroller or microprocessor with A/D
inputs. This patented, single element transducer combines advanced
micromachining techniques, thin-film metallization, and bipolar processing to
provide an accurate, high level analog output signal that is proportional to the
applied pressure.
Features
• 5.0% Maximum Error Over 0° to 85°C
• Ideally Suited for Microprocessor or Microcontroller-Based Systems
• Temperature Compensated Over –40° to +125°C
• Thermoplastic (PPS) Surface Mount Package
• Patented Silicon Shear Stress Strain Gauge
• Available in Differential and Gauge Configurations
Pressure
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MPXV7025
Rev 5, 1/2009
MPXV7025
Series
-25 to 25 kPa (-3.6 to 3.6 psi)
0.2 to 4.7 V Output
Application Examples
• Respiratory Systems
• Process Control
• Patient Monitoring
• Remote Monitoring Devices
ORDERING INFORMATION
Device Name
Package
Options
Case
No.
# of Ports
None Single Dual
Gauge
Small Outline Package (MPXV7025 Series)
MPXV7025GC6U
Rails
482A
MPXV7025GC6T1
Tape & Reel
482A
MPXV7025GP
Trays
1369
MPXV7025DP
Trays
1351
Small Outline Package (Media Resistant Gel) (MPVZ7025 Series)
MPVZ7025GC6T1
Tape & Reel
482A
MPVZ7025GC6U
Rails
482A
MPVZ7025GP
Trays
1369
MPVZ7025G6T1
Tape & Reel
482
MPVZ7025G6U
Rails
482
MPVZ7025DP
Trays
1351
Pressure Type
Differential Absolute
Device
Marking
MPXV7025G
MPXV7025G
MPXV7025GP
MPXV7025DP
MPVZ7025G
MPVZ7025G
MPVZ7025GP
MPVZ7025G
MPVZ7025G
MPVZ7025DP
SMALL OUTLINE PACKAGE
MPXV7025GC6U/T1
MPVZ7025GC6U/T1
CASE 482A-01
MPVZ7025G6U/T1
CASE 482-01
MPXV7025GP
MPVZ7025GP
CASE 1369-01
MPXV7025DP
MPVZ7025DP
CASE 1351-01
© Freescale Semiconductor, Inc., 2007-2009. All rights reserved.



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Pressure
Operating Characteristics
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Table 1. Operating Characteristics (VS = 5.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2. Decoupling circuit shown in
Figure 3 required to meet electrical specifications.)
Characteristic
Symbol Min Typ Max Unit
Pressure Range(1)
POP
-25
25 kPa
Supply Voltage(2)
VS 4.75 5.0 5.25 Vdc
Supply Current
Minimum Pressure Offset(3)
@ VS = 5.0 Volts
Full Scale Output(4)
@ VS = 5.0 Volts
Full Scale Span(5)
@ VS = 5.0 Volts
Accuracy
Sensitivity
(0 to 85°C)
(0 to 85°C)
(0 to 85°C)
(0 to 85°C)
Io — 7.0 10 mAdc
Voff 0.116 0.25 0.384 Vdc
VFSO
4.610
4.75
4.890
Vdc
VFSS
4.5
— Vdc
——
V/P —
±5.0
%VFSS
90 —- mV/kPa
Response Time(6)
tR — 1.0 —- ms
Output Source Current at Full Scale Output
Warm-Up Time(7)
Io+ — 0.1 —- mAdc
— — 20 —- ms
Offset Stability(8)
± 0.5
—- %VFSS
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range.
3. Offset (Voff) is defined as the output voltage at the minimum rated pressure.
4. Full Scale Output (VFSO) is defined as the output voltage at the maximum or full rated pressure.
5. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
minimum rated pressure.
6. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to
a specified step change in pressure.
7. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the Pressure has been stabilized.
8. Offset Stability is the product's output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
MPXV7025
2
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Maximum Ratings
Pressure
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Table 2. Maximum Ratings(1)
Rating
Symbol
Value
Maximum Pressure (P1 > P2)
Pmax
200
Storage Temperature
Tstg –40 to +125
Operating Temperature
TA –40 to +125
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.
Unit
kPa
°C
°C
VS 2
Sensing
Element
Thin Film
Temperature
Compensation
and
Gain Stage #1
Gain Stage #2
and
Ground
Reference
Shift Circuitry
Vout 4
GND
3
Pins 1, 5, 6, 7, and 8 are NO CONNECTS
for Small Outline Package Device
Figure 1. Integrated Pressure Sensor Schematic
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MPXV7025
3



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Pressure
On-chip Temperature Compensation and Calibration
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The MPXV7025 series pressure sensor operating
characteristics, and internal reliability and qualification tests
are based on use of dry air as the pressure media. Media,
other than dry air, may have adverse effects on sensor
performance and long-term reliability. Contact the factory for
information regarding media compatibility in your application.
Figure 2 shows the sensor output signal relative to
pressure input. Typical, minimum, and maximum output
curves are shown for operation over a temperature range of
0° to 85°C using the decoupling circuit shown in Figure 3. The
output will saturate outside of the specified pressure range.
Figure 3 shows the recommended decoupling circuit for
interfacing the output of the integrated sensor to the A/D input
of a microprocessor or microcontroller. Proper decoupling of
the power supply is recommended.
5.0
4.5 Transfer Function:
Vout = VS*(0.018*P+0.5) ± ERROR
4.0 VS = 5.0 Vdc
3.5 TEMP = 0 to 85°C
3.0
2.5
MAX
2.0
1.5
1.0
MIN
0.5
0 -25 0
Differential Pressure (kPa)
TYPICAL
25
Figure 2. Output versus Pressure Differential
1.0 µF
+5 V
Vout
Vs
IPS
0.01 µF
GND
OUTPUT
470 pF
Figure 3. Recommended Power Supply Decoupling
and Output Filtering
(For additional output filtering, please refer to
Application Note AN1646.))
MPXV7025
4
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Freescale Semiconductor




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