MPQ3906 Datasheet PDF - Motorola

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MPQ3906
Motorola

Part Number MPQ3906
Description Quad Amplifier Switching Transistor
Page 5 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier Switching
Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MPQ3906
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
–40
–40
–5.0
–200
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
500
4.0
900 mW
7.2 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
825
6.7
2.4 Watts
19.2 mW/°C
Operating and Storage Junction TJ, Tstg
Temperature Range
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction Junction
to Case to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151 250 °C/W
52 139 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
34
70 %
Q1–Q2 or Q3–Q4
2.0
26
%
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –4.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
–40
–40
–5.0
Preferred devices are Motorola recommended choices for future use and best overall value.
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— –50 nAdc
— –50 nAdc
2–498
Motorola Small–Signal Transistors, FETs and Diodes Device Data



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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
hFE
VCE(sat)
Base – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VBE(sat)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
Output Capacitance (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cobo
Cibo
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = –10 mAdc, VBE(off) = 0.5 Vdc, IB1 = –1.0 mAdc)
ton
Turn–Off Time
(IC = –10 mAdc, IB1 = IB2 = –1.0 mAdc)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
toff
MPQ3906
Min Typ Max Unit
40 160 —
60 180 —
75 200 —
— –0.1 –0.25 Vdc
–0.65
–0.85
Vdc
200 250
— MHz
— 3.3 4.5 pF
— 4.8 10 pF
— 43 —
— 155 —
ns
ns
+0.5 V
10.6 V
< 1 ns
10 k
300 ns
DUTY CYCLE = 2%
3V
275
+9.1 V
CS < 4 pF*
0
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
< 1 ns
10.9 V
10 k
1N916
3V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–499



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MPQ3906
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0 Cobo
Cibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 3. Capacitance
20 30 40
500
300 IC/IB = 10
200
100
70
50
30
20
10
7
5
1.0
tr @ VCC = 3.0 V
15 V
40 V
td @ VOB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
TJ = 25°C
TJ = 125°C
5000
3000
2000
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
100
70
50
1.0
500
300
200
100
70
50
30
20
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
IC/IB = 20
VCC = 40 V
IB1 = IB2
IC/IB = 10
10
7
5
1.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
200
2–500
Motorola Small–Signal Transistors, FETs and Diodes Device Data



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MPQ3906
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = – 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
W5.0
SOURCE RESISTANCE = 200
IC = 1.0 mA
4.0
WSOURCE RESISTANCE = 200
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
m1.0 SOURCE RESISTANCE = 2.0 k
IC = 100 A
0
0.1 0.2 0.4
1.0 2.0 4.0 10 20 40
f, FREQUENCY (kHz)
Figure 7.
100
12
f = 1.0 kHz
10
8
IC = 1.0 mA
IC = 0.5 mA
6
4 IC = 50 mA
2 IC = 100 mA
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 8.
40
100
300
200
100
70
50
30
0.1
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
h PARAMETERS
(VCE = – 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
70
50
30
20
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 9. Current Gain
5.0 7.0 10
10
7
5
0.1
10
7.0
5.0
3.0
2.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Output Admittance
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
5.0 7.0 10
1.0
0.7
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–501



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