MPQ3904 Datasheet PDF - Motorola

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MPQ3904
Motorola

Part Number MPQ3904
Description Quad Amplifier Switching Transistor
Page 6 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier Switching
Transistor
NPN Silicon
14 13 12 11 10 9 8
NPN
1234567
MPQ3904
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
VCEO
VCBO
VEBO
IC
40
60
6.0
200
Each
Transistor
Four
Transistors
Equal Power
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
500
4.0
900 mW
7.2 mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
825
6.7
2.4 Watts
19.2 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Junction Junction
to Case to Ambient
Unit
Thermal Resistance
Each Die
Effective, 4 Die
151 250 °C/W
52 139 °C/W
Coupling Factors
Q1–Q4 or Q2–Q3
34
70 %
Q1–Q2 or Q3–Q4 2.0 26 %
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 40 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
40
60
6.0
Preferred devices are Motorola recommended choices for future use and best overall value.
14
1
CASE 646–06, STYLE 1
TO–116
Typ Max Unit
— — Vdc
— — Vdc
— — Vdc
— 50 nAdc
— 50 nAdc
2–492
Motorola Small–Signal Transistors, FETs and Diodes Device Data



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MPQ3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min Typ Max Unit
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
hFE
VCE(sat)
30 90 —
50 160 —
75 200 —
— 0.1 0.2 Vdc
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VBE(sat)
— 0.65 0.85 Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT 250 300 — MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cobo
Cibo
— 2.0 4.0 pF
— 4.0 8.0 pF
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 10 mAdc, VBE(off) = –0.5 Vdc, IB1 = 1.0 mAdc)
ton — 37 — ns
Turn–Off Time
(IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
v v1. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
toff
— 136 —
ns
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–493



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MPQ3904
DUTY CYCLE = 2%
300 ns
– 0.5 V
+10.9 V
10 k
< 1 ns
+3 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
CS < 4 pF*
0
– 9.1 V
+10.9 V
10 k
1N916
< 1 ns
+3 V
275
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0
Cibo
3.0
2.0 Cobo
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000
2000
VCC = 40 V
IC/IB = 10
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
2–494
Motorola Small–Signal Transistors, FETs and Diodes Device Data



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500
300 IC/IB = 10
200
100
70
50
30
20
10
7
5
1.0
tr @ VCC = 3.0 V
40 V
15 V
td @ VOB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn – On Time
200
500
300
200 IC/IB = 20
IC/IB = 10
ts = ts – 1/8 tf
IB1 = IB2
100
70
50 IC/IB = 20
30 IC/IB = 10
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
200
MPQ3904
500
300 VCC = 40 V
200 IC/IB = 10
100
70
50
30
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Rise Time
200
500
300 VCC = 40 V
200 IB1 = IB2
IC/IB = 20
100
70
50
30 IC/IB = 10
20
10
7
5
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
200
TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
WSOURCE RESISTANCE = 200
10 IC = 1.0 mA
W8 SOURCE RESISTANCE = 200
IC = 0.5 mA
6 SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
W2 SOURCE RESISTANCE = 500
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0
10 20 40
f, FREQUENCY (kHz)
Figure 9.
100
14
12 f = 1.0 kHz IC = 1.0 mA
10 IC = 0.5 mA
8
6
IC = 50 mA
IC = 100 mA
4
2
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
RS, SOURCE RESISTANCE (k OHMS)
Figure 10.
40
100
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–495



MPQ3904 datasheet pdf
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MPQ3904 pdf
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