MOC3162M Datasheet PDF - Fairchild Semiconductor


www.Datasheet-PDF.com

MOC3162M
Fairchild Semiconductor

Part Number MOC3162M
Description 6-Pin DIP Zero-Cross Phototriac Driver Optocoupler
Page 13 Pages

MOC3162M datasheet pdf
View PDF for PC
MOC3162M pdf
View PDF for Mobile


No Preview Available !

September 2015
MOC3061M, MOC3062M, MOC3063M,
MOC3162M, MOC3163M
6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak)
Features
• Simplifies Logic Control of 115/240 VAC Power
• Zero Voltage Crossing to Minimize Conducted and
Radiated Line Noise
• 600 V Peak Blocking Voltage
• Superior Static dv/dt
– 600 V/μs (MOC306xM)
– 1000 V/μs (MOC316xM)
• Safety and Regulatory Approvals
– UL1577, 4,170 VACRMS for 1 Minute
– DIN EN/IEC60747-5-5
Applications
• Solenoid/Valve Controls
• Static Power Switches
• Temperature Controls
• AC Motor Starters
• Lighting Controls
• AC Motor Drives
• E.M. Contactors
• Solid State Relays
Description
The MOC306XM and MOC316XM devices consist of a
GaAs infrared emitting diode optically coupled to a
monolithic silicon detector performing the function of a
zero voltage crossing bilateral triac driver.
They are designed for use with a triac in the interface of
logic systems to equipment powered from 115/240 VAC
lines, such as solid-state relays, industrial controls,
motors, solenoids and consumer appliances, etc.
Schematic
Package Outlines
ANODE 1
6 MAIN TERM.
CATHODE 2
N/C 3
ZERO
CROSSING
CIRCUIT
5 NC*
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
Figure 1. Schematic
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
Figure 2. Package Outlines
www.fairchildsemi.com



No Preview Available !

Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 VRMS
< 300 VRMS
Characteristics
I–IV
I–IV
40/85/21
2
175
Symbol
VPR
VIORM
VIOTM
DTI
RIO
Parameter
Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option TV, 0.4" Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Insulation Resistance at TS, VIO = 500 V
Value
1360
1594
850
6000
7
7
10
0.5
> 109
Unit
Vpeak
Vpeak
Vpeak
Vpeak
mm
mm
mm
mm
Ω
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
2
www.fairchildsemi.com



No Preview Available !

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only. TA = 25°C unless otherwise specified.
Symbol
Parameters
Device
Value
Unit
TOTAL DEVICE
TSTG
TOPR
TJ
TSOL
Storage Temperature
Operating Temperature
Junction Temperature Range
Lead Solder Temperature
All
-40 to +150
°C
All
-40 to +85
°C
All
-40 to +100
°C
All
260 for
10 seconds
°C
Total Device Power Dissipation at 25°C Ambient
PD Derate Above 25°C
All
250 mW
2.94 mW/°C
EMITTER
IF Continuous Forward Current
VR Reverse Voltage
Total Power Dissipation at 25°C Ambient
PD Derate Above 25°C
All 60 mA
All 6 V
120 mW
All
1.41 mW/°C
DETECTOR
VDRM
ITSM
Off-State Output Terminal Voltage
Peak Non-Repetitive Surge Current
(Single Cycle 60 Hz Sine Wave)
All 600 V
All 1 A
Total Power Dissipation at 25°C Ambient
PD Derate Above 25°C
150 mW
All
1.76 mW/°C
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
3
www.fairchildsemi.com



No Preview Available !

Electrical Characteristics
TA = 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
Parameters
Test Conditions
EMITTER
VF Input Forward Voltage
IR Reverse Leakage Current
DETECTOR
IDRM1
Peak Blocking Current,
Either Direction
IF = 30 mA
VR = 6 V
VDRM = 600 V, IF = 0(1)
dv/dt
Critical Rate of Rise of
Off-State Voltage
IF = 0 (Figure 11)(2)
Device Min. Typ. Max. Unit
All
1.3 1.5
V
All 0.005 100 μA
MOC306XM
MOC316XM
10 500
nA
10 100
MOC306XM 600
MOC316XM 1000
1500
V/μs
Transfer Characteristics
Symbol
DC Characteristics
Test Conditions Device Min. Typ. Max. Unit
MOC3061M
15
LED Trigger Current
IFT (Rated IFT)
Main Terminal
Voltage = 3 V(3)
MOC3062M
MOC3162M
MOC3063M
MOC3163M
10
mA
5
VTM
Peak On-State Voltage, Either Direction
ITM = 100 mA peak,
IF = rated IFT
IH Holding Current, Either Direction
All
All
1.8 3.0
500
V
μA
Zero Crossing Characteristics
Symbol Characteristics
VINH
Inhibit Voltage (MT1-MT2
voltage above which
device will not trigger)
IDRM2
Leakage in Inhibited
State
Test Conditions
Device
IF = rated IFT
MOC3061M
MOC3062M
MOC3063M
MOC3162M
MOC3163M
IF = rated IFT, DRM = 600 V,
off-state
All
Min.
Typ.
12
12
Max.
20
15
2
Unit
V
mA
Isolation Characteristics
Symbol
Parameter
VISO Isolation Voltage(4)
RISO Isolation Resistance
CISO Isolation Capacitance
Test Conditions
f = 60 Hz, t = 1 Minute
VI-O = 500 VDC
V = 0 V, f = 1 MHz
Min.
4170
Typ.
1011
0.2
Max.
Unit
VACRMS
Ω
pF
Notes:
1. Test voltage must be applied within dv/dt rating.
2. This is static dv/dt. See Figure 11 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
3. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating
IF lies between max IFT (15 mA for MOC3061M, 10 mA for MOC3062M and MOC3162M, 5 mA for MOC3063M and
MOC3163M) and absolute maximum IF (60 mA).
4. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and
pins 4, 5 and 6 are common.
©2005 Fairchild Semiconductor Corporation
MOC306XM, MOC316XM Rev. 1.5
4
www.fairchildsemi.com




MOC3162M datasheet pdf
Download PDF
MOC3162M pdf
View PDF for Mobile


Similiar Datasheets : MOC3162-M MOC3162-M MOC3162M MOC3163-M MOC3163-M MOC3163M

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Privacy Policy + Contact