MOC3081M Datasheet PDF - Fairchild Semiconductor

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MOC3081M
Fairchild Semiconductor

Part Number MOC3081M
Description (MOC3081M - MOC3083M) 6-Pin DIP Zero-C Cross Optoisolators Triac Driver Output
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MOC3081M
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(800 VOLT PEAK)
MOC3082M
MOC3083M
PACKAGE
SCHEMATIC
ANODE 1
6 MAIN TERM.
CATHODE 2
5 NC*
N/C 3
ZERO
CROSSING
CIRCUIT
4 MAIN TERM.
*DO NOT CONNECT
(TRIAC SUBSTRATE)
DESCRIPTION
www.DataSheet4U.comThe MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic
silicon detector performing the function of a zero voltage crossing bilateral triac driver.
They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from 240 VAC lines,
such as solid-state relays, industrial controls, motors, solenoids and consumer appliances, etc.
FEATURES
• Underwriters Laboratories (UL) recognized - file #E90700, Volume 2
• VDE recognized - file #102497 - add option V (e.g., MOC3083VM)
• Simplifies logic control of 240 VAC power
• Zero voltage crossing
• dv/dt of 1500 V/µs typical, 600 V/µs guaranteed
• Compatible with Fairchild’s FKPF12N80 discrete power triac
APPLICATIONS
• Solenoid/valve controls
• Lighting controls
• Static power switches
• AC motor drives
• Temperature controls
• E.M. contactors
• AC motor starters
• Solid state relays
© 2005 Fairchild Semiconductor Corporation
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MOC3081M
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(800 VOLT PEAK)
MOC3082M
MOC3083M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameters
Symbol
Value
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature Range
Isolation Surge Voltage(4) (peak AC voltage, 60Hz, 1 sec duration)
Total Device Power Dissipation @ 25°C
Derate above 25°C
TSTG
TOPR
TSOL
TJ
VISO
PD
-40 to +150
-40 to +85
260 for 10 sec
-40 to +100
7500
250
2.94
EMITTER
Continuous Forward Current
IF 60
Reverse Voltage
VR 6
Total Power Dissipation 25°C Ambient
120
Derate above 25°C
www.DataSheet4U.comDETECTOR
PD 1.41
Off-State Output Terminal Voltage
Peak Repetitive Surge Current (PW = 100 µs, 120 pps)
Total Power Dissipation @ 25°C Ambient
Derate above 25°C
VDRM
ITSM
PD
800
1
150
1.76
Units
°C
°C
°C
°C
Vac(pk)
mW
mW/°C
mA
V
mW
mW/°C
V
A
mW
mW/°C
© 2005 Fairchild Semiconductor Corporation
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6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(800 VOLT PEAK)
MOC3081M
MOC3082M
MOC3083M
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters
EMITTER
Input Forward Voltage
Reverse Leakage Current
DETECTOR
Peak Blocking Current, Either Direction
Critical Rate of Rise of Off-State Voltage
Test Conditions
IF = 30 mA
VR = 6 V
VDRM = 800V, IF = 0 (note 1)
IF = 0 (figure 9, note 3)
Symbol
VF
IR
IDRM1
dv/dt
Min
600
Typ*
1.3
0.005
10
1500
Max Units
1.5 V
100 µA
500 nA
V/µs
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions Symbol Device
Min Typ*
MOC3081M
www.DataSheet4U.comLED Trigger Current
Main Terminal
Voltage = 3V (note 2)
IFT
MOC3082M
MOC3083M
Peak On-State Voltage,
Either Direction
ITM = 100 mA peak,
IF = rated IFT
VTM
All
1.8
Holding Current, Either Direction
IH All
500
Max Units
15
10 mA
5
3V
µA
ZERO CROSSING CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
DC Characteristics
Test Conditions Symbol Device
Min Typ*
Inhibit Voltage (MT1-MT2 voltage
above which device will not trigger)
Leakage in Inhibited State
IF = Rated IFT
IF = Rated IFT,
VDRM = 800V, off state
VINH
IDRM2
All
All
12
200
Max Units
20 V
500 µA
ISOLATION CHARACTERISTICS
Characteristics
Input-Output Isolation Voltage
Test Conditions
f = 60 Hz, t = 1 sec (note 4)
Symbol
VISO
Min
7500
Typ*
Max Units
Vac(pk)
*Typical values at TA = 25°C
Note
1. Test voltage must be applied within dv/dt rating.
2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT. Therefore, recommended operating IF lies
between max IFT (15 mA for MOC3081M, 10 mA for MOC3082M, 5 mA for MOC3083M) and absolute max IF (60 mA).
3. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.
4. Isolation surge voltage, VISO, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common,
and Pins 4, 5 and 6 are common.
© 2005 Fairchild Semiconductor Corporation
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MOC3081M
6-PIN DIP ZERO-CROSS
OPTOISOLATORS TRIAC DRIVER OUTPUT
(800 VOLT PEAK)
MOC3082M
MOC3083M
Figure 1. LED Forward Voltage vs. Forward Current
1.7
Figure 2. Trigger Current Vs. Temperature
1.6
1.6
1.5
1.4
1.3
TA = -40°C
1.2
1.1 TA = 25°C
1.0 TA = 85°C
0.9
1.5
VTM = 3V
NORMALIZED TO TA = 25°C
1.4
1.3
1.2
1.1
1.0
0.8 0.9
0.7
0.1
1
10 100
0.8
-40 -20 0 20 40 60 80 100
www.DataSheet4U.comIF, LED FORWARD CURRENT (mA)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. LED Current Required to Trigger vs.
LED Pulse Width
16
14 TA = 25°C
NORMALIZED TO PWIN >> 100µs
12
10
8
6
4
2
0
1 10 100
PWIN, LED TRIGGER PULSE WIDTH (µs)
Figure 4. Leakage Current, IDRM vs. Temperature
10000
1000
100
10
1
0.1
-40
-20 0 20 40 60 80
TA, AMBIENT TEMPERATURE (°C)
100
© 2005 Fairchild Semiconductor Corporation
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