MMDT3946FL3 Datasheet PDF - Diodes

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MMDT3946FL3
Diodes

Part Number MMDT3946FL3
Description 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR
Page 9 Pages


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MMDT3946FL3
40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN DFN1310-6
Features
Complementary Pair One 3904-Type NPN
One 3906-Type PNP
Ultra-Small Surface Mount Package
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: X2-DFN1310-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - NiPdAu, Solderable per MIL-STD-202,
Method 208 e4
Weight: 0.006 grams (Approximate)
X2-DFN1310-6 (Type B)
E1, B1, C1 = PNP 3906
E2, B2, C2 = NPN 3904
Top View
Pinout
Top View
Ordering Information (Note 4)
Product
MMDT3946FL3-7
Standard
AEC-Q101
Marking
47
Reel Size (inches)
7
Tape Width (mm)
8
Quantity Per Reel
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
47 47 = Product Type Marking Code
MMDT3946FL3
Datasheet Number DS38537 Rev.1 - 2
1 of 9
www.diodes.com
May 2016
© Diodes Incorporated



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Absolute Maximum Ratings, NPN 3904 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
60
40
6.0
200
Absolute Maximum Ratings, PNP 3906 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Value
-40
-40
-6.0
-200
Thermal Characteristics, Total Device (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RJA
TJ, TSTG
Value
370
339
-55 to +150
MMDT3946FL3
Unit
V
V
V
mA
Unit
V
V
V
mA
Unit
mW
C/W
C
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
Notes: 5. For a device mounted on minimum recommended pad layout that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst
operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMDT3946FL3
Datasheet Number DS38537 Rev.1 - 2
2 of 9
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Thermal Characteristics and Derating Information
MMDT3946FL3
1
V
CE(SAT)
Limit
100m
DC 1s
100ms
10m
NPN
10ms
1ms
T =25oC
A
100s
Minimum Copper FR-4
One active die
1m
100m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1
V
CE(SAT)
Limit
100m
DC 1s
100ms
10m
PNP
10ms
1ms
T =25oC
A
Minimum Copper FR-4
100s
One active die
1m
0.1 1 10
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
350
300
250
200 D=0.5
150 D=0.3
T =25oC
A
Minimum Copper FR-4
One active die
100
D=0.1
50 D=0.05
0 Single Pulse
110000µμ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
Minimum Copper FR-4
One active die
20 40 60 80 100 120 140 160
Temperature (oC)
Derating Curve
Single Pulse
10 T =25oC
A
Minimum Copper FR-4
One active die
1
0.1
11000μ 1m 10m 100m 1
10 100
Pulse Width (s)
Pulse Power Dissipation
1k
MMDT3946FL3
Datasheet Number DS38537 Rev.1 - 2
3 of 9
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May 2016
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MMDT3946FL3
Electrical Characteristics, NPN 3904 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
Static Forward Current Transfer Ratio
Symbol Min Typ Max Unit
BVCBO 60  
V
BVCEO 40  
V
BVEBO 6.0  
V
ICEX
  50 nA
IBL   50 nA
40
70
hFE
100
60
 300
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
VCE(SAT)
VBE(SAT)
0.65
0.20
0.30
0.85
0.95
V
V
Cobo
Cibo
  4.0 pF
  9.5 pF
Current Gain-Bandwidth Product
fT 300  MHz
SWITCHING CHARACTERISTICS
Delay Time
tD   35 ns
Rise Time
Storage Time
Fall Time
tR   35 ns
tS   200 ns
tF   50 ns
Note:
7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Test Condition
IC = 100A, IE = 0
IC = 1.0mA, IB = 0
IE = 100A, IC = 0
VCE = 30V, VEB(OFF) = 3.0V
VCE = 30V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
VCB = 5.0V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA,
f = 100MHz
VCC = 3.0V, IC = 10mA,
VBE = 0.5V, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = 1.0mA, IB2 = -1.0mA
MMDT3946FL3
Datasheet Number DS38537 Rev.1 - 2
4 of 9
www.diodes.com
May 2016
© Diodes Incorporated



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