MMBT8550D Datasheet PDF - SEMTECH

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MMBT8550D
SEMTECH

Part Number MMBT8550D
Description PNP Silicon Epitaxial Planar Transistor
Page 5 Pages


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MMBT8550C / MMBT8550D
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary type the NPN transistor
MMBT8050C and MMBT8050D are
recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T a = 25 OC)
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCEO
-VCBO
-VEBO
-IC
Ptot
Tj
TS
Value
25
40
6
600
200
150
-55 to +150
Unit
V
V
V
mA
mW
OC
OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
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MMBT8550C / MMBT8550D
Characteristics at Tamb=25 OC
DC Current Gain
at -VCE=1V, -IC=100mA
MMBT8550C
MMBT8550D
at -VCE=1V, -IC=500mA
Collector Cutoff Current
at -VCB=35V
Collector Saturation Voltage
at -IC=500mA, -IB=50mA
Base Saturation Voltage
at -IC=500mA, -IB=50mA
Collector Emitter Breakdown Voltage
at -IC=2mA
Collector Base Breakdown Voltage
at -IC=10µA
Emitter Base Breakdown Voltage
at -IE=100µA
Gain Bandwidth Product
at -VCE=5V, -IC=10mA, f=50MHz
Collector Base Capacitance
at -VCB=10V, f=1MHz
Thermal Resistance Junction to Ambient
Symbol
hFE
hFE
hFE
-ICBO
-VCE(sat)
-VBE(sat)
-V(BR)CEO
-V(BR)CBO
-V(BR)EBO
fT
CCBO
RthA
Min.
100
160
40
-
-
-
25
40
6
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
100
12
-
Max.
250
400
-
100
0.5
1.2
-
-
-
-
-
200
Unit
-
-
-
nA
V
V
V
V
V
MHz
pF
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 20/10/2005



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MMBT8550C / MMBT8550D
Admissible power dissipation
versus ambient temperature
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
W ST 8550
1
0.8
Ptot 0.6
0.4
0.2
0
0 100 200 oC
Tamb
Pulse thermal resistance
versus pulse duration
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
K/W
103
ST 8550
5
2
102
5
0.5
rthA 2 0.2
0.1
10 0.05
5 0.02
2
1
0.01
5 0.005
v=0
2
10 -1
10-6 10-5 10-4
tp
v=Ttp
T
10-3 10-2 10-1 1
PI
10
102 S
tp
Collector current
versus base emitter voltage
mA
10 3
5
2
10 2 150 oC
5
-IC 2
10
5
2
1
5
2
10 -1
0
ST 8550
25 oC
-50 oC
typical
laimt Titasmb=25o C
1 2V
-VBE
Collector cutoff current
versus ambient temperature
nA
104
ST 8550
5
2
-ICES 103
5
2
102
5
2
10
5
2
1
0 100
Tamb
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
R
Dated : 20/10/2005



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MMBT8550C / MMBT8550D
DC current gain
versus collector current
Common emitter
collector characteristics
1000
700
500
400
300
-VCE=1V
150 oC
ST 8550
hFE 200
100
Tamb=25o C -50 o C
70
50
40
30
20
10
10
-1
1
10 10 2 10 3
-IC
Common emitter
collector characteristics
mA
500
0.9
400
ST 8550
0.85
-IC 300
200
0.8
100 0.75
0
0
-VBE=0.7V
1 2V
-VCE
Common emitter
collector characteristics
mA
500
400
-IC 300
200
100
0
0
R
ST 8550
3.2 2.8
2.4
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
mA
100
80
-IC 60
40
20
-IB=0.2mA
1 2V
-VCE
0
0
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
ST 8550
0.35
0.3
0.25
0.2
0.15
0.1
-IB=0.05mA
10 20V
-VCE
Dated : 20/10/2005



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