MMBT8550 Datasheet PDF - TAITRON

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MMBT8550
TAITRON

Part Number MMBT8550
Description SMD General Purpose Transistor
Page 4 Pages


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SMD General Purpose Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.008 gram
SMD General Purpose
Transistor (PNP)
MMBT8550
SOT-23
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBT8550
Unit
Conditions
VCEO
Collector-Emitter Voltage
-25 V
VCBO
Collector-Base Voltage
-40 V
VEBO
Emitter-Base Voltage
-5.0 V
IC Collector Current
-1.5 A
PD Total Device Power Dissipation(Note 1)
225 mW
TA=25 ˚C
1.8
mW/°C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient
556 °C /W
PD
Total Device Power Dissipation, Alumina Substrate
(Note 2)
300 mW
TA=25 ˚C
2.4
mW/°C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient
417 °C /W
TJ Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Rev. B/PG
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SMD General Purpose Transistor (PNP)
MMBT8550
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
Description
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cut-off Current
Emitter Cut-off Current
Min.
-25
-40
-5.0
-
-
Max.
-
-
-
-0.15
-0.15
Unit
V
V
V
µA
µA
Conditions
IC=-1mA, IB=0
IC=-0.1mA, IE=0
IE=-0.1mA, IC=0
VCB=-35V, IE=0
VEB=-4.0V, IC=0
On Characteristics
Symbol
Description
hFE
VCE(sat)
D.C. Current Gain
Collector-Emitter Saturation Voltage
Min.
100
-
Max.
600
-0.5
Unit
V
Conditions
VCE=-1V, IC=-100mA
IC=-800mA, IB=-80mA
Classification Of hFE
Rank
P
Range
100-200
Marking
1HB
Q
150-300
1HD
R
200-400
1HF
S
300-600
1HH
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Rev. B/PG
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SMD General Purpose Transistor (PNP)
Typical Characteristics Curves
Fig.1- Static Characteristic
MMBT8550
Fig.2- DC Current Gain
Collector-Emitter Voltage (V)
Fig.3- Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Current IC (mA)
Fig.4- Base-Emitter On Voltage
Collector Current IC (mA)
Base-Emitter Voltage
(V)
Fig.5- Current Gain Bandwidth Product Number of Cycles at 60HZ
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Collector Current IC (mA)
Rev. B/PG
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Dimensions in mm
SMD General Purpose Transistor (PNP)
MMBT8550
How to contact us:
SOT-23
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: taitron@taitroncomponents.com
Http://www.taitroncomponents.com
TAITRON COMPONENTS MEXICO, S.A .DE C.V.
BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P.
42970 MEXICO
Tel: +52-55-5560-1519
Fax: +52-55-5560-2190
TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL
Tel: +55-11-5574-7949
Fax: +55-11-5572-0052
TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE
METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA
Tel: +86-21-5424-9942
Fax: +86-21-5424-9931
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Rev. B/PG
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