MMBT8550 Datasheet PDF - TAITRON

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MMBT8550
TAITRON

Part Number MMBT8550
Description SMD General Purpose Transistor
Page 4 Pages


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SMD General Purpose Transistor (PNP)
Features
PNP Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.008 gram
SMD General Purpose
Transistor (PNP)
MMBT8550
SOT-23
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBT8550
Unit
Conditions
VCEO
Collector-Emitter Voltage
-25 V
VCBO
Collector-Base Voltage
-40 V
VEBO
Emitter-Base Voltage
-5.0 V
IC Collector Current
-1.5 A
PD Total Device Power Dissipation(Note 1)
225 mW
TA=25 ˚C
1.8
mW/°C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient
556 °C /W
PD
Total Device Power Dissipation, Alumina Substrate
(Note 2)
300 mW
TA=25 ˚C
2.4
mW/°C
Derate above 25 ˚C
RθJA
Thermal Resistance, Junction to Ambient
417 °C /W
TJ Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
Note: 1. FR-5 Board=25.4 x 19.05 x 1.58 mm (1.0 x 0.75 x 0.062 inches.)
2. Alumina Substrate=10.16 x 7.62 x 0.61 mm (0.4 x 0.3 x 0.024 inches.) 99.5% alumina.
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Rev. B/PG
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