MMBT8550 Datasheet PDF - Colour

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MMBT8550
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Part Number MMBT8550
Description PNP Silicon Epitaxial Planar Transistor
Page 2 Pages


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MMBT8550 (2A) PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Especially suitable for AF-driver stages
and low power output stages.
The transistor is subdivided into two groups
C And D according to its DC current gain.
1.Base 2.Emitter 3.Collector
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
TS
Value
40
25
6
2
350
150
- 55 to + 150
Unit
V
V
V
A
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 5 mA
at -VCE = 1 V, -IC = 100 mA
at -VCE = 1 V, -IC = 1.5 A
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 6 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 2 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 1.5 A, -IB = 100 mA
Base Emitter Saturation Voltage
at -IC = 1.5 A, -IB = 100 mA
Base Emitter Voltage
at -VCE = 1 V, -IC = 10 mA
Transition Frequency
at -VCE = 10 V, -IC = 50 mA
Symbol
MMBT8550C
MMBT8550D
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE(on)
fT
Min.
45
100
160
40
-
-
40
25
6
-
-
-
100
Max.
-
250
300
-
100
100
-
-
-
0.5
1.2
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
Page 1 of 2
6/4/2011

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