MJE13002 Datasheet PDF - UTC


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MJE13002
UTC

Part Number MJE13002
Description NPN SILICON POWER TRANSISTOR
Page 9 Pages

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UNISONIC TECHNOLOGIES CO., LTD
MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
„ DESCRIPTION
The UTC MJE13002 designed for use in high–volatge, high
speed,power switching in inductive circuit, It is particularly
suited for 115 and 220V switchmode applications such as
switching regulator’s,inverters, DC-DC converter, Motor
control, Solenoid/Relay drivers and deflection circuits.
„ FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @IC=1.0A.
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13002L-x-T92-B
MJE13002G-x-T92-B
MJE13002L-x-T92-K
MJE13002G-x-T92-K
MJE13002L-x-T92-A-B MJE13002G-x-T92-A-B
MJE13002L-x-T92-A-K MJE13002G-x-T92-A-K
MJE13002L-x-T60-T
MJE13002G-x-T60-T
Package
TO-92
TO-92
TO-92
TO-92
TO-126
Pin Assignment
123
BCE
BCE
ECB
ECB
BCE
Packing
Tape Box
Bulk
Tape Box
Bulk
Tube
„ MARKING
TO-92
TO-126/TO-126C/TO-126S
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Continuous
Peak (1)
Base Current
Continuous
Peak (1)
Emitter Current
Continuous
Peak (1)
TA=25°C
Total Power Dissipation
Derate above 25°C
TC=25°C
Derate above 25°C
Junction Temperature
Storage Temperature
SYMBOL
VCEO(SUS)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
TJ
TSTG
RATINGS
300
600
9
1.5
3
0.75
1.5
2.25
4.5
1.4
11.2
40
320
150
-65 to +150
UNIT
V
V
V
A
A
A
Watts
MW/°C
Watts
MW/°C
°C
°C
„ THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
TO-92
TO-126
θJC
25
3.12
°C/W
Junction to Ambient
TO-92
TO-126
θJA
122
89
°C/W
Maximum Load Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
TL
275 °C
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
SYMBOL
VCEO(SUS)
Collector Cutoff Current
ICEV
SECOND BREAKDOWN
Second Breakdown Collector Current with
bass forward biased (See Figure 5)
Clamped Inductive SOA with base reverse
biased (See Figure 6)
DC Current Gain
IS/IB
RBSOA
hFE1
hFE2
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
V BE(SAT)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT
Cob
SWITCHING CHARACTERISTICS (TABLE 1)
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
tf
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
TEST CONDITIONS
IC=10 mA , IB=0
VCEV=Rated Value, VBE(off)=1.5 V
VCEV=Rated Value,
VBE(off)=1.5V,Tc=100°C
IC=0.5 A, VCE=2 V
IC=1 A, VCE=2 V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A,TC=100°C
IC=0.5A, IB=0.1A
IC=1A, IB=0.25 A
IC=1A, IB=0.25A,TC=100°C
IC=100mA, VCE=10 V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
VCC=125V, IC=1A,
IB1=IB2=0.2A, tP=25μs,
Duty Cycle1%
IC=1A,Vclamp=300V,
IB1=0.2A,VBE(off)=5V,TC=100°C
MIN TYP MAX UNIT
300
1
5
8 40
5 25
0.5
1
3
V
1
1
1.2 V
1.1
4 10
21
MHz
pF
0.05 0.1
0.5 1
24
0.4 0.7
μs
μs
μs
μs
1.7 4
0.29 0.75
0.15
μs
μs
μs
„ CLASSIFICATION OF hFE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJE13002
NPN EPITAXIAL SILICON TRANSISTOR
„ APPLICATION INFORMATION
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V VCC
0.001µF
1N4933 33
MJE210
L MR826*
pw 5V
DUTY CYCLE? 10%
tr,tf? 10ns
68
33 1N4933
2N2222
1K
1K
+5V
RB
IB
1N4933
0.02µF 270
NOTE
PWand Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
1K T.U.T.
2N2905
MJE200
47
1/2W 100
-VBE(off)
IC Vclamp
*SELECTEDFOR? 1KV
5.1K
VCE
51
Coil Data :
GAP for 30 mH/2 A
VCC=20V
Ferroxcube core #6656
Lcoil=50mH
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
Output Waveforms
OUTPUT WAVEFORMS
IC IC(pk)
t1
VCE VCE or
Vclamp
TIME
tf CLAMPED
t
tf
t2 t
t1 Adjusted to
Obtain Ic
t1=
Lcoil(Icpk)
Vcc
t2=
Lcoil(Icpk)
Vclamp
Test Equipment
Scope-Tektronics
475 or Equivalent
Resistive
Switching
+125V
Rc
RB TUT
SCOPE
D1
-4.0V
VCC=125V
RC=125
D1=1N5820 or
Equiv.
RB=47
+10.3V
25μS
0
-8.5V
tr,tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
IC
(AMP)
0.5
1
TC
(°C)
25
100
25
100
TSV
(μs)
1.3
1.6
1.5
1.7
Table 2. Typical Inductive Switching Performance
TRV
(μs)
0.23
0.26
0.10
0.13
TFI
(μs)
0.30
0.30
0.14
0.26
TTI
(μs)
0.35
0.40
0.05
0.06
TC
(μs)
0.30
0.36
0.16
0.29
1.5
25
100
1.8 0.07 0.10 0.05 0.16
3 0.08 0.22 0.08 0.28
Note: All Data Recorded in the inductive Switching Circuit Table 1
Fig 1. Inductive Switching Measurements
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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