MJD210 Datasheet PDF - UTC

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MJD210
UTC

Part Number MJD210
Description PNP SILICON DPAK
Page 5 Pages


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UNISONIC TECHNOLOGIES CO., LTD
MJD210
PNP SILICON TRANSISTOR
PNP SILICON DPAK FOR
SURFACE MOUNT
APPLICATIONS
„ DESCRIPTION
The UTC MJD210 is designed for low voltage, low-power,
high-gain audio amplifier applications.
1
TO-252
„ FEATURE
*Collector-Emitter Sustaining Voltage
VCEO(SUS) =-25V (Min) @ IC =-10mA
*High DC Current Gain
hFE =70 (Min) @ IC=-500mA
=45 (Min) @ IC=-2A
=10 (Min) @ IC=-5A
*Lead Formed for Surface Mount Applications in
Plastic Sleeves (No Suffix)
*Straight Lead Version in Plastic Sleeves (“-1” Suffix)
*Lead Formed Version in 16mm Tape and Reel
(“T4” Suffix)
*Low Collector – Emitter Saturation Voltage
VCE(SAT) = -0.3V (Max) @ IC =-500mA
= -0.75V (Max) @ IC = -2.0 A
*High Current-Gain-Bandwidth Product
fT = 65 MHz (Min) @ IC = -100 mA
*Annular Construction for Low Leakage
ICBO = -100 nA @ Rated VCB
„ ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
MJD210L-TM3-T
MJD210G-TM3-T
MJD210L-TN3-T
MJD210G-TN3-T
MJD210L-TN3-R
MJD210G-TN3-R
1
TO-251
Package
TO-251
TO-252
TO-252
Pin Assignment
123
BCE
BCE
BCE
Packing
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
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MJD210
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40 V
Collector-Emitter Voltage
VCEO
-25 V
Emitter-Base Voltage
Collector Current
Continuous
Peak
VEBO
IC
-7 V
-5 A
-10 A
Base Current
IB -1 A
Total Device Dissipation
TC=25°C
Derate above 25°C
Ta=25°C (Note2)
PD
12.5 W
0.1 W/°C
1.4 W
Derate above 25°C
0.011
W/°C
Junction Temperature
Storage Junction Temperature
TJ
TSTG
+150
-65 ~ +150
°C
°C
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted on minimum pad sizes recommended.
„ THERMAL DATA (Ta=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
89.3
10
„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(Note 1) VCEO(SUS) IC=-10mA, IB=0
Collector Cutoff Current
ICBO
VCB=-40V, IE=0
VCB=-40V, IE=0, TJ=125°C
Emitter Cutoff Current
IEBO VBE=-7V, IC=0
ON CHARACTERISTICS
IC=-500mA, VCE=-1V
DC Current Gain (Note 1)
hFE IC=-2A, VCE=-1V
IC=-5A, VCE=-2V
Collector-Emitter Saturation Voltage (Note 1)
VCE(SAT)
IC=-500mA, IB=-50mA
IC=-2A, IB=-200mA
IC=-5A, IB=-1A
Base-Emitter Saturation Voltage (Note 1)
VBE(SAT) IC=-5A, IB=-1A
Base-Emitter On Voltage (Note 1)
VBE(ON) IC=-2A, VCE=-1V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product (Note 2)
fT
IC=-100mA, VCE=-10V,
fTEST = 10MHz
Output Capacitance
COB VCB=-10V, IE=0, f=0.1MHz
Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle 2%.
2. fT =hFE|‧fTEST.
MIN
-25
70
45
10
65
MAX UNIT
-100
-100
-100
V
nA
nA
nA
180
-0.3
-0.75
-1.8
-2.5
-1.6
V
V
V
MHz
120 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJD210
„ TYPICAL CHARACTERISTICS
T A TC
2.5 25
2 20
VDS=10V
ID=6V
Power Derating
1.5 15
1 10
0.5 5
T A (Surface Mount )
TC
00
25
50 75 100
Temperature,T()
125
PNP SILICON TRANSISTOR
Switching Time Test Circuit
+11V
25
µs
-9V
trtf10ns
Duty Cycle=1%
VCC +30V
RC
RB
D1
51
SCOPE
-4V
RB and RC Varied to Obtain Desired Current Levels
D1 Must be Fast Recovery Type, e.g.:
1N5825 Used Above IB 100mA for PNP Test
150 Circuit MSD6100 Used Below IB100mA Reverse
All Polaritries
1000
500
300
200
100
Turn-On Time
tD
tF
50
30
20
10
5
3
2 (VCC=30V,IC/IB=10,TJ=25)
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
Collector Current,IC (A)
10
Turn-Off Time
10K
5K
3K tS
2K tF
1K
500
300
200
100
50
30
20 (VCC=30V,IC/IB=10,IB1=IB2,TJ=25)
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
Collector Current, IC (A)
10
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJD210
„ TYPICAL CHARACTERISTICS (Cont.)
+2.5
+2
+1.5
+1
Temperature Current (A)
*Applies For IC/IBhEF/3
25to 150
+0.5
0
-0.5
-1
-1.5
*θVC for VCE(SAT)
-55to 25
θVB for VBE
25to 150
-55to 25
-2
-2.5
0.05 0.07 0.1 0.2 0.3 0.5 0.7 1
2 35
Collector Current, IC(A)
PNP SILICON TRANSISTOR
Capacitance
200
Cib
TJ=25
100
70
50 Cob
30
20 0.4 0.5 1
2 4 6 10
Reverse Voltage, VR (V)
20
40
Active Region Safe Operating Area
10 100µ
5 500µ
3
2
1 TJ=150
1ms
DC 5ms
__ _ __ _Bonding Wire Limited
__ __ __ Thermally Limited @TC=25
(Singel Pulse)
0.1 _______ Second Breakdown Limited
Curves Aplly Below
Rated VCEO
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate IC-VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves
indicate.
The data of Fig. 9 is based on TJ(pk)=150; Tc is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk)150. TJ(pk) may be calculated from the data
in Figure 8. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
0.01
0.3 1 2 3 5 7 10 20 30
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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