MHW10188AN Datasheet PDF - Freescale Semiconductor

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MHW10188AN
Freescale Semiconductor

Part Number MHW10188AN
Description Gallium Arsenide CATV Amplifier Module
Page 5 Pages


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Freescale Semiconductor
Technical Data
Document Number: MHW10188AN
Rev. 0, 11/2006
Gallium Arsenide
CATV Amplifier Module
Features
Specified for 79 - , 112 - and 132 - Channel Loading
Excellent Distortion Performance
Higher Output Capability
Built - in Input Diode Protection
GaAs FET Transistor Technology
Unconditionally Stable Under All Load Conditions
Output Port Ring Wave Protection
Applications
CATV Systems Operating in the 40 to 1000 MHz Frequency Range
Output Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
Driver Amplifier in Linear General Purpose Applications
Description
www.DataSheet244UV.dccoSmupply, 40 to 1000 MHz, CATV GaAs Forward Power Doubler
Amplifier Module
RoHS Compliant
MHW10188AN
1000 MHz
21 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Table 2. ESD Maximum Ratings
Symbol
Vin
VCC
TC
Tstg
Value
+75
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Rating
Input Value
Output Value
Surge Voltage per IEC 1000 - 4 - 5
300 300
Human Body Model per Mil. Std. 1686
22
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Frequency Range
BW 40 — 1000
Power Gain
Slope
1000 MHz
40 - 1000 MHz
Gp 20 21 22
S 0.2 1 1.8
Gain Flatness (40 - 1000 MHz, Peak - to - Valley)
Return Loss — Input
(Zo = 75 Ohms)
40 - 180 MHz
181 - 300 MHz
301 - 450 MHz
451 - 870 MHz
871 - 1000 MHz
GF — — 0.8
IRL
20 — —
19 — —
18 — —
17 — —
16 — —
Return Loss — Output
(Zo = 75 Ohms)
40 - 180 MHz
181 - 300 MHz
301 - 450 MHz
451 - 870 MHz
871 - 1000 MHz
ORL
20 — —
19 — —
18 — —
17 — —
16 — —
Unit
V
kV
Unit
MHz
dB
dB
dB
dB
dB
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHW10188AN
1



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Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +45°C, 75 Ω system unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ Max
Composite Second Order
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
Cross Modulation Distortion @ Ch 2
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
www.DataSChomeepots4itUe .Tcrioplme Beat
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +56 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
(Vout = +58 dBmV @ 870 MHz Equiv)
Noise Figure
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
132 - Channel FLAT
112 - Channel FLAT
79 - Channel FLAT
112 - Channel, 12 dB Tilt
112 - Channel, 13.5 dB Tilt
112 - Channel, 17 dB Tilt
79 - Channel, 12 dB Tilt
79 - Channel, 13.5 dB Tilt
79 - Channel, 17 dB Tilt
50 MHz
550 MHz
750 MHz
870 MHz
1000 MHz
CSO132
CSO112
CSO79
CSO112
CSO112
CSO112
CSO79
CSO79
CSO79
XMD132
XMD112
XMD79
XMD112
XMD112
XMD112
XMD79
XMD79
XMD79
CTB132
CTB112
CTB79
CTB112
CTB112
CTB112
CTB79
CTB79
CTB79
NF
- 64 - 62
- 66 - 64
- 70 - 68
- 65 —
- 64 —
- 63 —
- 69 —
- 74 —
- 73 —
- 57 —
- 59 —
- 62 —
- 53 —
- 55 —
- 58 —
- 60 —
- 62 —
- 67 —
- 58 - 56
- 62 - 60
–68 - 66
- 60 —
- 61 —
- 64 —
- 66 —
- 71 —
- 74 —
45
45
45
45
5 5.5
DC Current (VDC = 24 V, TC = 45°C)
IDC 410 425 440
Unit
dBc
dBc
dBc
dB
mA
MHW10188AN
2
RF Device Data
Freescale Semiconductor



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PACKAGE DIMENSIONS
A
Z
FJ
F
A
S
B
L
2X U
1 2 3 5 78 9
N
www.DataSheet4U.com
T
X
4X G
2X Y
0.010 M Z T A M
2X Q
0.010 M T F M A M
V
R
2X 6−32UNC−2B
0.010 M Z T A M
E
C
E
K
7X D
0.020 M T A M X
Z
X
P
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A −−− 1.775 −−− 45.085
B −−− 1.085 −−− 27.559
C −−− 0.840 −−− 21.336
D 0.015 0.021 0.381 0.533
E 0.465 0.510 11.811 12.954
F 0.300 0.325 7.62 8.255
G 0.100 BSC
2.540 BSC
J 0.156 BSC
3.962 BSC
K 0.315 0.355 8.001 9.017
L 1.000 BSC
25.400 BSC
N 0.165 BSC
4.191 BSC
P 0.100 BSC
2.540 BSC
Q 0.148 0.168 3.759 4.267
R −−− 0.600 −−− 15.24
S 1.500 BSC
38.100 BSC
U 0.200 BSC
5.080 BSC
V −−− 0.250 −−− 6.350
W 0.435 −−− 11.049 −−−
X 0.400 BSC
10.160 BSC
W Y 0.152 0.163 3.861 4.140
Z 0.009 0.011 0.229 0.279
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. GROUND
4. DELETED
5. VDC
6. DELETED
7. GROUND
8. GROUND
9. RF OUTPUT
CASE 1302 - 01
ISSUE E
RF Device Data
Freescale Semiconductor
MHW10188AN
3



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REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
Date
Nov. 2006
Initial Release of Data Sheet
Description
www.DataSheet4U.com
MHW10188AN
4
RF Device Data
Freescale Semiconductor



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