MHW10186N Datasheet PDF - Freescale Semiconductor

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MHW10186N
Freescale Semiconductor

Part Number MHW10186N
Description Gallium Arsenide CATV Amplifier Module
Page 5 Pages


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Freescale Semiconductor
Technical Data
Document Number: MHW10186N
Rev. 0, 11/2006
Gallium Arsenide
CATV Amplifier Module
Features
Specified for 79 - , 112 - and 132 - Channel Loading
Excellent Distortion Performance
Built - in Input Diode Protection
GaAs FET Transistor Technology
Unconditionally Stable Under All Load Conditions
Applications
CATV Systems Operating in the 40 to 1000 MHz Frequency Range
Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
Output Stage Amplifier on Applications Requiring Low Power Dissipation
and High Output Performance
Driver Amplifier in Linear General Purpose Applications
Description
www.DataSheet244UV.dccoSmupply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module
RoHS Compliant
MHW10186N
1000 MHz
18.5 dB GAIN
132 - CHANNEL
GaAs CATV AMPLIFIER MODULE
Table 1. Maximum Ratings
Rating
RF Voltage Input (Single Tone)
DC Supply Voltage
Operating Case Temperature Range
Storage Temperature Range
Table 2. ESD Maximum Ratings
Symbol
Vin
VCC
TC
Tstg
CASE 1302 - 01, STYLE 1
Value
+65
+26
- 20 to +100
- 40 to +100
Unit
dBmV
Vdc
°C
°C
Rating
Surge Voltage per IEC 1000 - 4 - 5
Human Body Model per Mil. Std. 1686
Input Value
300
2
Output Value
300
2
Unit
V
kV
Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Frequency Range
BW 40 —
Power Gain
Slope
1000 MHz
40 - 1000 MHz
Gp 18 18.5
S 0.2 0.6
Gain Flatness (40 - 1000 MHz, Peak - to - Valley)
Return Loss — Input
(Zo = 75 Ohms)
40 - 200 MHz
201 - 600 MHz
601 - 870 MHz
871 - 1000 MHz
GF — 0.3
IRL
20 —
19 —
18 —
15 —
Max
1000
19.5
1.2
0.8
Unit
MHz
dB
dB
dB
dB
Return Loss — Output
(Zo = 75 Ohms)
40 - 200 MHz
201 - 600 MHz
601 - 870 MHz
871 - 1000 MHz
ORL
dB
20 — —
19 — —
18 — —
17 — —
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MHW10186N
1



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Table 3. Electrical Characteristics (VCC = 24 Vdc, TC = +30°C, 75 Ω system unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Composite Second Order
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +44 dBmV/ch., Worst Case)
Cross Modulation Distortion @ Ch 2
(Vout = +48 dBmV/ch., FM = 55 MHz)
(Vout = +46 dBmV/ch., FM = 55 MHz)
(Vout = +44 dBmV/ch., FM = 55 MHz)
Composite Triple Beat
(Vout = +48 dBmV/ch., Worst Case)
(Vout = +46 dBmV/ch., Worst Case)
(Vout = +44 dBmV/ch., Worst Case)
Noise Figure
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
79 - Channel FLAT
112 - Channel FLAT
132 - Channel FLAT
50 MHz
870 MHz
1000 MHz
CSO79
CSO112
CSO132
XMD79
XMD112
XMD132
CTB79
CTB112
CTB132
NF
- 72 - 64
- 65 - 61
- 67 - 60
- 58 —
- 58 —
- 58 —
- 64 - 60
- 61 - 58
- 62 - 58
45
3.7 5
4.1 5
DC Current (VDC = 24 V, TC = - 20° to +100°C)
IDC 230 250 265
Unit
dBc
dBc
dBc
dB
mA
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MHW10186N
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RF Device Data
Freescale Semiconductor



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PACKAGE DIMENSIONS
A
Z
FJ
F
A
S
B
L
2X U
1 2 3 5 78 9
N
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T
X
4X G
2X Y
0.010 M Z T A M
2X Q
0.010 M T F M A M
V
R
2X 6−32UNC−2B
0.010 M Z T A M
E
C
E
K
7X D
0.020 M T A M X
Z
X
P
NOTES:
1. DIMENSIONS ARE IN INCHES.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A −−− 1.775 −−− 45.085
B −−− 1.085 −−− 27.559
C −−− 0.840 −−− 21.336
D 0.015 0.021 0.381 0.533
E 0.465 0.510 11.811 12.954
F 0.300 0.325 7.62 8.255
G 0.100 BSC
2.540 BSC
J 0.156 BSC
3.962 BSC
K 0.315 0.355 8.001 9.017
L 1.000 BSC
25.400 BSC
N 0.165 BSC
4.191 BSC
P 0.100 BSC
2.540 BSC
Q 0.148 0.168 3.759 4.267
R −−− 0.600 −−− 15.24
S 1.500 BSC
38.100 BSC
U 0.200 BSC
5.080 BSC
V −−− 0.250 −−− 6.350
W 0.435 −−− 11.049 −−−
X 0.400 BSC
10.160 BSC
W Y 0.152 0.163 3.861 4.140
Z 0.009 0.011 0.229 0.279
STYLE 1:
PIN 1. RF INPUT
2. GROUND
3. GROUND
4. DELETED
5. VDC
6. DELETED
7. GROUND
8. GROUND
9. RF OUTPUT
CASE 1302 - 01
ISSUE E
RF Device Data
Freescale Semiconductor
MHW10186N
3



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REVISION HISTORY
The following table summarizes revisions to this document.
Revision
0
Date
Nov. 2006
Initial Release of Data Sheet
Description
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MHW10186N
4
RF Device Data
Freescale Semiconductor



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