ME4436 Datasheet PDF - Matsuki

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ME4436
Matsuki

Part Number ME4436
Description N-Channel 60V (D-S) MOSFET
Page 5 Pages


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N-Channel 60V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4436 is the N-Channel logic enhancement mode power field
effect transistors are produced using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook
computer power management and other battery powered circuits
where high-side switching and low in-line power loss are needed in a
very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4436(-G)
FEATURES
RDS(ON)33m@VGS=10V
RDS(ON)40m@VGS=4.5V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management
DC/DC Converter
LCD TV & Monitor Display inverter
CCFL inverter
e Ordering Information: ME4436 (Pb-free)
ME4436-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25
Current(Tj=150)
TA=70
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
L=0.1mH
Maximum Power Dissipation
TA=25
TA=70
Operating Junction & Storage Temperature Range
Thermal Resistance-Junction to Ambient *
Thermal Resistance-Junction to Case *
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
PD
TJ
RθJA
RθJC
10 secs Steady State
60
±20
7.1 5.6
5.7 4.5
30
2
15
12
2.7 1.6
1.7 1
-55 to 150
46 76
43
Unit
V
A
mJ
W
℃/W
Jan, 2009-Ver1.1
01Free Datasheet http://www.nDatasheet.com



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N-Channel 60V (D-S) MOSFET
ME4436(-G)
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Conditions
Min Typ Max
STATIC
VDS
VGS(th)
IGSS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
IDSS Zero Gate Voltage Drain Current
ID(ON)
RDS(ON)
VSD
On-State Drain Currenta
Drain-Source On-Resistancea
Diode Forward Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VDS=0V, VGS=±20V
VDS=60V, VGS=0V
VDS=60V, VGS=0V
TJ=55
VDS5V, VGS=10V
VGS=10V, ID= 5.3A
VGS=4.5V, ID= 4.7A
IS=2A
60
1.0 1.8 3.0
±100
1
10
30
26
31
0.8
33
40
1.2
DYNAMIC
Ciss Input capacitance
940 1100
Coss
Output Capacitance
VDS=30V, VGS=0V, f=1.0MHz
71
Crss
Reverse Transfer Capacitance
33
Qg Total Gate Charge
VDS=30V, VGS=10V, ID=5.3A
22
13.3
29
18
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=5V, ID=5.3A
7.1
7.5
Rg Gate Resistance
f=1MHz
0.9
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V, RL =6.8Ω
ID=4.4A, VGEN=10V
RG=1Ω
14
26
41
3.6
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=30V, RL =6.8Ω
ID=4.4A, VGEN=4.5V
RG=1Ω
12
26
42
3.8
Notes: a. Pulse test: pulse width300us, duty cycle2%,Guaranteed by design, not subject to production testing.
18
33
52
6
16
33
52
7
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
A
mΩ
V
pF
nC
Ω
ns
Jan, 2009-Ver1.1
02Free Datasheet http://www.nDatasheet.com



No Preview Available !

N-Channel 60V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME4436(-G)
Jan, 2009-Ver1.1
03Free Datasheet http://www.nDatasheet.com



No Preview Available !

N-Channel 60V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME4436(-G)
Jan, 2009-Ver1.1
04Free Datasheet http://www.nDatasheet.com



ME4436 datasheet pdf
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ME4436 pdf
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