MDF6N60 Datasheet PDF - MagnaChip


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MDF6N60
MagnaChip

Part Number MDF6N60
Description N-Channel MOSFET
Page 9 Pages

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MDP6N60/MDF6N60
N-Channel MOSFET 600V, 6A, 1.4
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 600V
ID = 6.0A
RDS(ON) ≤ 1.4Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
G
S`
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP6N60 MDF6N60
600
±30
6.0 6.0*
3.8 3.8*
24 24*
131 37.9
1.05 0.3
13.1
4.5
220
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
MDP6N60
62.5
0.95
MDF6N60
62.5
3.3
Unit
oC/W
Feb. 2009 Version 1.3
1 MagnaChip Semiconductor Ltd.



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Ordering Information
Part Number
MDP6N60TH
MDF6N60TH
Temp. Range
-55~150oC
-55~150oC
Package
TO-220
TO-220F
Packing
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gfs
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
IS
VSD
trr
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 3.0A
VDS = 30V, ID = 3.0A
VDS = 480V, ID = 6.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 300V, ID = 6A,
RG = 25Ω(3)
IS = 6.0A, VGS = 0V
IF = 6.0A, dl/dt = 100A/µs(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD 6.0A, di/dt200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=8.7mH, IAS=6.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Min Typ Max Unit
600 -
3.0 -
-
V
5.0
- - 1 µA
- - 100 nA
1.2 1.4 Ω
- 5 -S
- 15.4 -
- 4.4 - nC
- 5.9 -
- 660 860
- 3.2 5 pF
- 78 100
- 14
- 23.2
- 32.2
ns
- 21.2
- 6.0 - A
- 1.4 V
- 275
ns
- 2.1
µC
Feb. 2009 Version 1.3
2 MagnaChip Semiconductor Ltd.



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12
11 Vgs=5.5V
=6.0V
10 =6.5V
=7.0V
9 =8.0V
8
=10.0V
=15.0V
7
6
Notes
1. 250PulseTest
2. TC=25
5
4
3
2
1
5 10 15
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
20
3.0
Notes :
2.5
1. VGS = 10 V
2. ID = 3.0A
2.0
1.5
1.0
0.5
0.0
-50
0 50 100 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
200
2.5
2.0
VGS=10.0V
1.5
VGS=20V
1.0
0.5
0 5 10
ID,DrainCurrent [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
15
1.2
Notes :
1. VGS = 0 V
2. ID = 250
1.1
1.0
0.9
0.8
-50
0 50 100 150
TJ, Junction Temperature [oC]
200
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
150
-55
1
25
0.1
2468
VGS [V]
Fig.5 Transfer Characteristics
Feb. 2009 Version 1.3
10
3
Notes :
1. V = 0 V
GS
10 2.250µs Pulse test
150
1
25
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD, Source-Drain Voltage [V]
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.



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10 Note : ID = 6A
8
6
120V
300V
480V
4
2
0
0 2 4 6 8 10 12
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
14
16
102
Operation in This Area
is Limited by R DS(on)
101
100
100 µs
1 ms
10 ms
DC 100 ms
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25
100 101 102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
MDP6N60(TO-220)
1200
1000
Ciss
800
Coss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
600
400
Crss
200
Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
100 ms
1s
DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25
100 101 102
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Safe Operating Area
MDF6N60(TO-220F)
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
single pulse
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=0.95/W
10-2
10-5
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.11 Transient Thermal Response Curve
MDP6N60(TO-220)
Feb. 2009 Version 1.3
4
101
D=0.5
100 0.2
0.1
0.05
10-1
10-2
10-5
0.02
0.01
single pulse
Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=3.3/W
10-4 10-3 10-2 10-1 100
t1, Rectangular Pulse Duration [sec]
101
Fig.12 Transient Thermal Response Curve
MDF6N60(TO-220F)
MagnaChip Semiconductor Ltd.




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