MD2103DFX Datasheet PDF - ST Microelectronics

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MD2103DFX
ST Microelectronics

Part Number MD2103DFX
Description High Voltage NPN Power Transistor
Page 11 Pages


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MD2103DFX
High voltage NPN power transistor for standard
definition CRT display
General features
State-of-the-art technology:
– Diffused collector “enhanced generation”
More stable performance versus operating
temperature variation
Low base drive requirement
Tighter hFE range at operating collector current
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC European
Directive
Description
The MD2103DFX is manufactured using Diffused
Collector in Planar technology adopting new and
enhanced high voltage structure.
The new MD product series show improved
silicon efficiency briging updated performance to
the horizontal deflection stage.
Applications
Horizontal deflection output for TV
3
2
1
ISOWATT218FX
Internal schematic diagram
RBE=65(typ)
Order codes
Part number
MD2103DFX
Marking
MD2103DFX
Package
ISOWATT218FX
Packing
Tube
October 2006
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Rev 1
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Contents
Contents
MD2103DFX
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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MD2103DFX
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum rating
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
Ptot
VINS
Tstg
TJ
Collector-emitter voltage (VBE =0)
Collector-emitter voltage (IB =0)
Emitter-base voltage (IC =0)
Collector current
Collector peak current (tP < 5ms)
Base current
Total dissipation at Tc 25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
__max
Value
1500
700
7
6
9
3
52
2500
-65 to 150
150
Value
2.4
Unit
V
V
V
A
A
A
W
V
°C
°C
Unit
°C/W
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Electrical characteristics
2 Electrical characteristics
MD2103DFX
(Tcase = 25°C unless otherwise specified)
Table 3. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE =0)
IEBO
Emitter cut-off current
(IC =0)
Emitter-base brakdown
V(BR)EBO voltage (IC = 0)
VCE(sat) (1) Collector-emitter
saturation voltage
VCE = 1500V
VCE = 1500V TC = 125°C
VEB = 5V
IE = 700mA
IC = 3A _ _ IB =0.75A
50
0.2 mA
2 mA
125 mA
11 V
1.8 V
VBE(sat) (1)
Base-emitter saturation
voltage
hFE (1) DC current gain
Inductive load
ts Storage time
tf Fall time
VF Diode forward voltage
IC = 3A _ _ IB =0.75A
IC = 1A
IC = 3A
IC = 3A
VCE =5V
VCE =1V
VCE =5V
IC =3A
fh =16kHz
IB(on) =0.5A VBE(off) =-2.7V
LBB(off) =6.3µH
(see Figure 9)
IF = 3A
6.5
17
6
3.8
0.25
1.5
9.5
2
V
µs
µs
V
Note (1) Pulsed duration = 300 µs, duty cycle 1.5%
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