MD2103DFP Datasheet PDF - STMicroelectronics

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MD2103DFP
STMicroelectronics

Part Number MD2103DFP
Description High voltage NPN power transistor
Page 9 Pages


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MD2103DFP
High voltage NPN power transistor for standard
definition CRT display
Features
State-of-the-art technology:
– Diffused collector “enhanced generation”
Stable performance versus operating
temperature variation
Low base drive requirement
Tight hFE range at operating collector current
Fully insulated power package UL compliant
Integrated free wheeling diode
Applications
Horizontal deflection output for TV
Description
The MD2103DFP is manufactured using diffused
collector in planar technology adopting new and
enhanced high voltage structure. The new MD
product series show improved silicon efficiency
briging updated performance to the horizontal
deflection stage.
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
RBE=65(typ)
Table 1. Device summary
Order code
Marking
MD2103DFP
MD2103DFP
Package
TO-220FP
Packing
Tube
May 2008
Rev 1
1/9
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www.DataSEhleeect4tUri.ccoaml ratings
1 Electrical ratings
MD2103DFP
Table 2. Absolute maximum rating
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
Ptot
VINS
Tstg
TJ
Collector-emitter voltage (VBE =0)
Collector-emitter voltage (IB =0)
Emitter-base voltage (IC =0)
Collector current
Collector peak current (tP < 5ms)
Base current
Total dissipation at Tc 25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Value
1500
700
7
6
9
3
38
1500
-65 to 150
150
Value
3.3
Unit
V
V
V
A
A
A
W
V
°C
°C
Unit
°C/W
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2 Electrical characteristics
Electrical characteristics
Note:
(Tcase = 25°C unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE =0)
IEBO
Emitter cut-off current
(IC =0)
Emitter-base brakdown
V(BR)EBO voltage (IC = 0)
VCE(sat) (1) Collector-emitter
saturation voltage
VCE = 1500V
VCE = 1500V TC = 125°C
VEB = 5V
IE = 700mA
IC = 3A _ _ IB =0.75A
50
0.2 mA
2 mA
125 mA
11 V
1.8 V
VBE(sat) (1)
Base-emitter saturation
voltage
hFE (1) DC current gain
Inductive load
ts Storage time
tf Fall time
VF Diode forward voltage
IC = 3A _ _ IB =0.75A
IC = 1A
IC = 3A
IC = 3A
VCE =5V
VCE =1V
VCE =5V
IC =3A
fh =16kHz
IB(on) =0.5A VBE(off) =-2.7V
LBB(off) =6.3µH
(see Figure 12)
IF = 3A
6.5
17
6
3.8
0.25
1.5
9.5
2
V
µs
µs
V
Note (1) Pulsed duration = 300 µs, duty cycle 1.5%
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www.DataSEhleeect4tUri.ccoaml characteristics
MD2103DFP
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Derating curve
Figure 4. Output characteristics
Figure 5. Reverse biased SOA
Figure 6. DC current gain
Figure 7. DC current gain
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