MCT272 Datasheet PDF - Infineon Technologies

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MCT272
Infineon Technologies

Part Number MCT272
Description (MCT270 - MCT277) Industry Standard Single Channel 6 Pin DIP Optocoupler
Page 6 Pages


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DEVICE TYPES
Part No. CTR % Min.
4N25
20
4N26
20
4N27
10
4N28
10
4N35
100
4N36
100
4N37
100
4N38
10
H11A1 50
H11A2 20
H11A3 20
H11A4 10
H11A5 30
Part No.
MCT2
MCT2E
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
CTR % Min.
20
20
50
4590
75150
125250
225400
7090
1560
100
FEATURES
• Interfaces with Common Logic Families
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package
• Field Effect Stable by TRIOS®
• 5300 VRMS Isolation Test Voltage
• Underwriters Laboratory File #E52744
V
DE
VDE #0884 Approval Available with Option 1
APPLICATIONS
• AC Mains Detection
• Reed Relay Driving
• Switch Mode Power Supply Feedback
• Telephone Ring Detection
• Logic Ground Isolation
• Logic Coupling with High Frequency Noise
Rejection
Notes:
Designing with data sheet is covered in Application Note 45.
PHOTOTRANSISTOR
Industry Standard
Single Channel
6 Pin DIP Optocoupler
Dimensions in Inches (mm)
321
pin one ID
.248 (6.30)
.256 (6.50)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
Anode 1
Cathode 2
4 56
.335 (8.50)
.343 (8.70)
NC 3
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.031 (0.80) min. 3°9°
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
6 Base
5 Collector
4 Emitter
.300 (7.62)
typ.
18°
.010 (.25)
typ.
.300.347
(7.628.81)
.114 (2.90)
.130 (3.0)
DESCRIPTION
This data sheet presents five families of Infineon Industry Standard
Single Channel Phototransistor Couplers. These families include the
4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/
A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/
277 devices.Each optocoupler consists of Gallium Arsenide infra-
red LED and a silicon NPN phototransistor.
These couplers are Underwriters Laboratories (UL) listed to comply
with a 5300 VRMS Isolation Test Voltage. This isolation performance
is accomplished through Infineon double molding isolation manu-
facturing process. Compliance to VDE 0884 partial discharge isola-
tion specification is available for these families by ordering option 1.
Phototransistor gain stability, in the presence of high isolation volt-
ages, is insured by incorporating a TRansparent lOn Shield
(TRIOS)® on the phototransistor substrate. These isolation pro-
cesses and the Infineon IS09001 Quality program results in the
highest isolation performance available for a commercial plastic
phototransistor optocoupler.
The devices are available in lead formed configuration suitable for
surface mounting and are available either on tape and reel, or in
standard tube shipping containers.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–53
March 27, 2000-00



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Maximum Ratings TA=25°C
Emitter
Reverse Voltage .......................................................................................... 6.0 V
Forward Current ........................................................................................ 60 mA
Surge Current (t10 µs)............................................................................... 2.5 A
Power Dissipation................................................................................... 100 mW
Detector
Collector-Emitter Breakdown Voltage........................................................... 70 V
Emitter-Base Breakdown Voltage ................................................................ 7.0 V
Collector Current ....................................................................................... 50 mA
Collector Current(t <1.0 ms).................................................................... 100 mA
Power Dissipation................................................................................... 150 mW
Package
Isolation Test Voltage.......................................................................... 5300 VRMS
Creepage .............................................................................................. 7.0 mm
Clearance ............................................................................................. 7.0 mm
Isolation Thickness between Emitter and Detector ............................... 0.4 mm
Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175
Isolation Resistance
VIO=500 V, TA=25°C...............................................................................1012
VIO=500 V, TA=100°C............................................................................ 1011
Storage Temperature................................................................ 55°C to +150°C
Operating Temperature ............................................................ 55°C to +100°C
Junction Temperature................................................................................ 100°C
Soldering Temperature (max. 10 s, dip soldering:
distance to seating plane 1.5 mm) ...................................................... 260°C
4N25/26/27/28—Characteristics TA=25°C
Emitter
Symbol Min. Typ.
Forward Voltage*
Reverse Current*
Capacitance
Detector
VF 1.3
IR 0.1
CO 25
Breakdown Voltage*
ICEO(dark)*
Collector-Emitter BVCEO 30
Emitter-Collector BVECO
7.0
Collector-Base
BVCBO 70
4N25/26/27
4N28
5.0
10
ICBO(dark)*
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
4N25/26
4N27/28
CCE
CTR
2.0
6.0
20 50
10 30
Isolation Voltage*
4N25
4N26/27
VIO 2500
1500
4N28
500
Saturation Voltage, Collector-Emitter
Resistance, Input to Output*
Coupling Capacitance
Rise and Fall Times
VCE(sat)
RIO 100
CIO 0.5
tr, tf 2.0
* Indicates JEDEC registered values
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
254
Max.
1.5
100
Unit
V
µA
pF
V
50 nA
100
20 nA
pF
%
V
0.5 V
G
pF
µs
Condition
IF=50 mA
VR=3.0 V
VR=0
IC=1.0 mA
IE=100 µA
IC=100 µA
VCE=10 V, (base open)
VCB=10 V, (emitter open)
VCE=0
VCE=10 V, IF=10 mA
Peak, 60 Hz
ICE=2.0 mA, IF=50 mA
VIO=500 V
f=1.0 MHz
IF=10 mA
VCE=10 V, RL=100
Phototransistor, Industry Standard
March 27, 2000-00



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4N35/36/37/38—Characteristics TA=25°C
Emitter
Forward Voltage*
Reverse Current*
Capacitance
Detector
Breakdown Voltage, Collector-Emitter*
Breakdown Voltage, Emitter-Collector*
Breakdown Voltage, Collector-Base*
Leakage Current, Collector-Emitter*
Leakage Current, Collector-Emitter*
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio*
DC Current Transfer Ratio*
Resistance, Input to Output*
4N35/36/37
4N38
4N35/36/37
4N38
4N35/36/37
4N38
4N35/36/37
4N38
4N35/36/37
4N38
4N35/36/37
4N38
Coupling Capacitance
Switching Time*
* Indicates JEDEC registered value
H11A1 through H11A5—Characteristics TA=25°C
Emitter
Forward Voltage
H11A1H11A4
H11A5
Reverse Current
Capacitance
Detector
Breakdown Voltage, Collector-Emitter
Breakdown Voltage, Emitter-Collector
Breakdown Voltage, Collector-Base
Leakage Current, Collector-Emitter
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio
H11A1
H11A2/3
H11A4
H11A5
Saturation Voltage, Collector-Emitter
Capacitance, Input to Output
Switching Time
Symbol
VF
IR
CO
Min.
0.9
Typ.
1.3
0.1
25
Max.
1.5
1.7
10
Unit
V
µA
pF
Condition
IF=10 mA
IF=10 mA, TA=55°C
VR=6.0 V
VR=0, f=1.0 MHz
BVCEO 30 — — V
80 — —
IC=1.0 mA
BVECO 7.0 — — V
IE=100 µA
BVCBO 70 — — V
IC=100 µA, IB=1.0 µA
80 — — —
ICEO
ICEO
CCE
5.0 50 nA VCE=10 V, IF=0
— — 50
VCE=60 V, IF=0
— — 500 µA VCE=30 V, IF=0, TA=100°C
6.0
VCE=60 V, IF=0, TA=100°C
6.0 pF VCE=0
CTR
100 — — % VCE=10 V, IF=10 mA,
20 — —
VCE=1.0 V, IF=20 mA
CTR
40 50 % VCE=10 V, IF=10 mA,
30 — — TA=55 to 100°C
RIO
1011 — —
VIO=500 V
CIO 0.5 pF f=1.0 MHz
tON, tOFF 10 µs IC=2.0 mA, RL=100 Ω, VCC=10 V
Symbol
VF
IR
C0
Min.
Typ.
1.1
1.1
50
Max.
1.5
1.7
10
Unit
V
µA
pF
Condition
IF=10 mA
VR=3.0 V
VR=0, f=1.0 MHz
BVCEO 30 — — V
IC=1.0 mA, IF=0 mA
BVECO 7.0 — — V
IE=100 µA, IF=0 mA
BVCBO 70 — — V
IC=10 µA, IF=0 mA
ICEO
5.0 50 nA VCE=10 V, IF=0 mA
CCE 6.0 pF VCE=0
CTR
VCEsat
CIO
tON, tOFF
50
20
10
30
——%
——
——
——
0.4 V
0.5 pF
3.0 µs
VCE=10 V, IF=10 mA
ICE=0.5 mA, IF=10 mA
IC=2.0 mA, RL=100 Ω, VCE=10 V
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
255
Phototransistor, Industry Standard
March 27, 2000-00



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MCT2/MCT2E—Characteristics TA=25°C
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Base
Leakage Current
Collector-Emitter
Collector-Base
Capacitance, Collector-Emitter
Package
DC Current Transfer Ratio
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
Symbol
VF
IR
CO
BVCEO
BVECO
BVCBO
ICBO
ICBO
CCE
CTR
CIO
RIO
tON, tOFF
Min.
30
7.0
70
20
Typ.
1.1
25
5.0
10
60
0.5
100
3.0
Max.
1.5
10
Unit
V
µA
pF
V
50 nA
20
pF
%
pF
G
µs
Condition
IF=20 mA
VR=3.0 V
VR=0, f=1.0 MHz
IC=1.0 mA, IF=0 mA
IE=100 µA, IF=0 mA
IC=10 µA, IF=0 mA
VCE=10 V, IF=0
VCE=0
VCE=10 V, IF=10 mA
IC=2.0 mA, RL=100 Ω, VCE=10 V
MCT270 through MCT277—Characteristics TA=25°C
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Base
Leakage Current, Collector-Emitter
Package
DC Current Transfer Ratio
MCT270
MCT271
MCT272
MCT273
MCT274
MCT275
MCT276
MCT277
Current Transfer Ratio, CollectorEmitter MCT271276
MCT277
CollectorEmitter Saturation Voltage
Capacitance, Input to Output
Resistance, Input to Output
Switching Time
MCT270/272
MCT271
MCT273
MCT274
MCT275/277
MCT276
Symbol
VF
IR
CO
Min.
BVCEO
BVECO
BVCBO
ICEO
30
7.0
70
CTR
50
45
75
125
225
70
15
100
CTRCE
12.5
40
VCEsat
CIO
RIO
tON, tOFF
Typ.
25
0.5
1012
Max.
1.5
10
Unit
V
µA
pF
V
——
50 nA
%
90
150
250
400
210
60
%
0.4 V
pF
10 µs
7.0
20
25
15
3.5
Condition
IF=20 mA
VR=3.0 V
VR=0, f=1.0 MHz
IC=10 µA, IF=0 mA
IE=10 µA, IF=0 mA
IC=10 µA, IF=0 mA
VCE=10 V, IF=0 mA
VCE=10 V, IF=10 mA
VCE=0.4 V, IF=16 mA
ICE=2.0 mA, IF=16 mA
VIO=500 VDC
IC=2.0 mA,
RL=100 ,
VCE=5.0 V
2001 Inneon Technologies Corp. Optoelectronics Division San Jose, CA
www.inneon.com/opto 1-888-Inneon (1-888-463-4636)
256
Phototransistor, Industry Standard
March 27, 2000-00



MCT272 datasheet pdf
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MCT272 pdf
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