MCR22-8 Datasheet PDF - SemiWell


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MCR22-8
SemiWell

Part Number MCR22-8
Description Sensitive Gate Silicon Controlled Rectifiers
Page 5 Pages

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SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
Features
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 1.5 A )
Low On-State Voltage (1.2V(Typ.)@ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
Preliminary
MCR22-8
Symbol
3. Anode
2. Gate
1. Cathode
TO-92
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 45 °C
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA=25°C, Pulse Width 1.0
TA=25°C, t = 8.3ms
Ratings
600
1.0
1.5
15
0.9
0.5
0.1
0.2
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
Nov, 2003. Rev. 0
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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MCR22-8
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Items
Conditions
Ratings
Min. Typ. Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 125 °C
10
200
VTM Peak On-State Voltage (1)
( ITM =3 A, Peak )
1.2 1.7 V
IGT Gate Trigger Current (2)
VAK = 6 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
200
500
VGT Gate Trigger Voltage (2)
VD = 7 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C
0.8 V
1.2
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C
0.2 ─ ─ V
dv/dt
Critical Rate of Rise Off-State
Voltage
VGM = 0.67VDRM,
Exponential waveform , RGK = 1000 Ω
TJ = 125 °C
200
V/
di/dt
Critical Rate of Rise On-State
Current
ITM = 3A, Ig = 10mA
50 A/
IH Holding Current
Rth(j-c)
Rth(j-a)
Thermal Impedance
Thermal Impedance
VAK = 12 V, Gate Open
Junction to case
Junction to Ambient
TC = 25 °C
TC = - 40 °C
2 5.0 mA
10
50 °C/W
160 °C/W
Notes :
1. Pulse Width 1.0 ms , Duty cycle 1%
2. Does not include RGK in measurement.
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Fig 1. Gate Characteristics
101
VGM (5V)
PGM (0.5W)
100
25
PG(AV) (0.1W)
10-1
10-1
VGD(0.2V)
100 101
Gate Current [mA]
102
Fig 3. Typical Forward Voltage
100
103
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
0.4
0.8 1.2 1.6 2.0
Instantaneous On-State Voltage [V]
2.4
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
1.5
1.2
0.9
0.6
0.3
-50
0 50 100
Junction Temperature [ oC]
150
MCR22-8
Fig 2. Maximum Case Temperature
140
120
100
θ = 180o
80
60 π 2π
40 θ
360°
20
θ : Conduction Angle
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Average On-State Current [A]
Fig 4. Thermal Response
100
10-1
10-2
10-1 100 101 102 103 104
Time (msec)
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
2.0
1.5
1.0
0.5
0.0
-50
0 50 100
Junction Temperature [ oC]
150
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MCR22-8
Fig 7. Typical Holding Current
10
9
8
7
6
5
4
3
2
1
-40
-20
0 20 40 60 80 100 120 140
Junction Temperature []
Fig 8. Power Dissipation
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
θ = 90o
θ = 60o
θ = 30o
θ = 120o
θ = 180o
0.2 0.4 0.6 0.8 1.0
Average On-State Current [A]
1.2
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