MCR22-6 Datasheet PDF - HAOPIN MICROELECTRONICS


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MCR22-6
HAOPIN MICROELECTRONICS

Part Number MCR22-6
Description SCRs
Page 5 Pages

MCR22-6 datasheet pdf
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
MCR22-6
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose
switching and phase control applications. These devices are intended to be interfaced directly to
microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Symbol
Simplified outline
a
Pin
1
2
3
TAB
k
g
123
TO-92
Description
Cathode
anode
gate
anode
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 600 V
On-state RMS current to 1.5 A
Ultra low gate trigger current
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
MCR22-6
MCR22-8
RMS on-state current full sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Value
400
600
1.5
15
Unit
V
A
A
SYMBOL
PARAMETER
R JC
R JA
Thermal resistance,
Junction to Case
Thermal resistance,
Junction to Ambient
CONDITIONS MIN
-
-
TYP
-
-
MAX
50
UNIT
/W
160 /W
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TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
MCR22-6
SCRs
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
VDRM
VRRM
IT(RMS)
PARAMETER
Repetitive peak off-state
Voltages
RMS on-state current
CONDITIONS
R =GK 1K,TJ=-40 to +110
MCR22-6
Sine wave,50to60 Hz,gate open MCR22-8
180o Conduction Angles,Tc=80
MIN
-
-
ITSM
Non-repetitive peak
Current
1/2Cycle,sine wave,60 Hz
-
I2t
IDRM
IRRM
IFGM
VRGM
PGM
P G(AV)
Tstg
Tj
Circuit fusing considerations t=8.3ms
Peak repetitive forward
or reverse blocking
current
Forward Peak gate current
Reverse Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature Range
VAK=Rated VDRM or VRRM
RGK=1000Ohms
TC=25
TC=110
TA=25 ,Pulse Width<=1.0 s
TA=25 ,Pulse Width<=1.0 s
TA=25 ,Pulse Width<=1.0 s
TA=25 ,Pulse Width<=1.0 s
-
-
-
-
-
-
-
-40
-
MAX
400
600
1.5
UNIT
V
A
15 A
0.9
10
200
0.2
5
0.5
0.1
150
110
A2S
A
A
A
V
W
W
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
Static characteristics
IGT Gate trigger current
CONDITIONS
VAK=6.0Vdc,RL=100 Ohms
Tc=25
Tc=-40
MIN TYP MAX UNIT
- 30 200
- 500 A
TL
Lead solder Temperature Lead Length>=1/16 from case,10s Max
-
- 260
IH
Holding current
VAK=12Vdc,lnitiating Current=200mA
TC=25
TC=-40
VTM On-state voltage
ITM=1.0A Peak
Gate trigger voltage
VAK=7.0Vdc,RL=100 Ohms
VGT TC=25
TC=-40
Dynamic Characteristics
DV/dt
di/dt
Critical rate of rise of
Off-state voltage
Critical Rate-of-Rise of
Off State Current
Tc=110
- 2.0 5.0 mA
- 10 mA
- 1.2 1.7 V
- - 0.8 V
- - 1.2 V
- 25 - V/ s
- - - A/ s
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No Preview Available !

TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
Description
MCR22-6
SCRs
http://www.haopin.com
¾



No Preview Available !

TM
HPM
HAOPIN MICROELECTRONICS CO.,LTD.
Description
MCR22-6
SCRs
http://www.haopin.com
¾




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