MCM21L14 Datasheet PDF - Motorola Semiconductor


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MCM21L14
Motorola Semiconductor

Part Number MCM21L14
Description 4096-Bit Static RAM
Page 5 Pages

MCM21L14 datasheet pdf
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® MOTOROLA
MCM2114
MCM21L14
4096-BIT STATIC RANDOM ACCESS MEMORY
The MCM2114 is a 4096-bit random access memory fabricated
with high density, high reliability N-channel silicon-gate technology.
For ease of use, the device operates from a single power supply,
is directly compatible with TTL and DTL, and requires no clocks
or refreshing because of fully static operation. Data access is par-
ticularly simple, since address setup times are not required. The
output data has the same polarity as the input data.
The MCM2114 is designed for memory applications where
simple interfacing is the design objective. The MCM2114 is as-
sembled in 18-pin dual-in-line packages with the industry standard
pin-out. A separate chip select (8) lead allows easy selection of
an individual package when. the three-state outputs are 0 R-tied.
The MCM2114 series has a maximum current of 100 mAo Low
power versions (i.e., MCM21 L14 series) are available with a maxi-
mum current of only 70 mAo
• 1024 Words by 4-Bit Organization
• Industry Standard 18-Pin Configuration
• Single +5 Volt Supply
• No Clock or Timing Strobe Required
• Fully Static: Cycle Time = Access Time
• Fully TTL/DTL Compatible
• Common Data Input and Output
• Three-State Outputs for OR-Ties
• Low Power Version Available
MAXIMUM ACCESS TIME/MINIMUM CYCLE TIME
MCM2114-20
MCM21L14-20
MCM2114-25
MCM21 L14-25
200 ns
250 ns
MCM2114-30
MCM21 L 14-30
MCM2114-45
MCM21L14-45
15
A9
A4
A5
1
A6
17
A7
16
A8
14
/101
13
1102
Row
Select
Memory Array
64 Row
, 64 Columns
300 ns
450 ns
Vec = Pin 18
Vss=Pin9
BLOCK DIAGRAM
MOS
IN-CHANNEL, SILICON-GATE)
4096·BIT STATIC
RANDOM ACCESS
MEMORY
II
~~ ~ ~ ~ p~sncij PSUFFIX
PACKAGE
CASE 707
)~'X
CERAMIC PACKAGE
CASE 680
PIN ASSIGNMENT
'r~l"A6
A5 2
Vcc
17 A7
A4 3
16 A8
A3 4
'LAO
Al
A2
S
15 A9
14 1/01
13 1/02
12 1/03
11 1/04
VSS 9
-----.J 10 IN
PIN NAMES
AO-A9
W
S
1101-1/04
Vee
VSS
Address Input
Write Enable
Chip Select
Data InputlOutput
Power (+5 V)
Ground
2-3



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MCM2114, MCM21 L14
I
ABSOLUTE MAXIMUM RATINGS (See Note 1)
Rating
Temperature Under Bias
Voltage on Any Pin With Respect to VSS
DC Output Current
Power Dissipation
Operating Temperature Range
Storage Temperature Range
Value
-10to+80
-0.5 to +7.0
5.0
1.0
o to +70
-65 to +150
Unit
°c
Vdc
mA
Watt
°c
°c
Note: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM
RATINGS are exceeded. Functional operation should be restricted
to RECOMMENDED OPERATING CONDITIONS. Exposure to
higher than recommended voltages for extended periods of time could
affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static voltages
or electric fields; however, it is advised that
normal precautions be taken to avoid applica·
tion of any voltage higher than maximum rated
voltages to this high-impedance circuit.
DC OPERATING CONDITIONS AND CHARACTERISTICS
= =(TA 0° to 70°C, Vee 5.0V ±5%, unless otherwise noted.)
RECOMMENDED DC OPERATING CONDITIONS
Parameter
Input Load Current
(All Input Pins, Yin = 0 to 5.5 V)
I/O Leakage Current
(S= 2.4 V, VIIO'=O.4 V to VCC)
Power Supply Current
(Vin ~ 5.5,11/0 = 0 mA, T A = 250 C)
Power Supply Cur.rent
(Vin = 5.5 V, 11/0 = 0 mA, TA = OoC)
Input Low Voltage
Input High Voltage
Output Low Current
VOL =O.4V
Output High Current
VOH = 2.4 V
Output Short Circuit Current
Note: 2. Duration not to exceed 30 seconds.
Symbol
III
IILOI
ICCl
ICC2
VIL
VIH
10L
10H
lOS (2)
MCM2114
Min Nom Max
10
MCM21 L 14
Min Nom Max
10
Unit
}1A
10 10 }1A
80 95
65 mA
100 70 mA
-0.5
0.8 -0.5
0.8 V
2.0 6.0 2.0 6.0 V
2.1 6.0
2.1 6.0
mA
-1.4 -1.0
-1.4 -1.0 mA
40 40 mA
CAPACITANCE
(f = 1 .0 MHz, T A = 25°C, periodically sampled rather than 100% tested.)
Characteristic
Input Capacitance (V in = 0 V)
Input/Output Capacitance (VI/O = 0 V)
Symbol
Cin
CliO
Max
5.0
5.0
Unit
pF
pF
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Full operating voltage and tem'perature unless otherwise noted.)
Input Pulse Levels ...
Input Rise arid Fall Times ..
Input and Output Timing Levels
Output Load.
0.8 Volt to 2.4 Volts
10 ns
1.5 Volts
1 TTL Gate and CL = 100 pF
2-4



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MCM2114, MCM21 L14
AC OPERATING CONDITIONS AND CHARACTERISTICS
Read (Note 3). Write (Note 4) Cycles
RECOMMENDED AC OPERATING CONDITIONS (TA 0·0 to 70°C, Vee = 5.0 V ± 5%)
Parameter
Read Cycle Time
Acc-e-ss-T_im.e_ - - - - - - - - -
Chip Selection to Output Valid
Chip Selection to Output Active
Output 3·State From Oeselection
Output Hold From Address Change
Write Cycle Time
Write Time
Write Rele-a-se-_Tim._e .._-_._._-----_.
Output 3-State From Write
Data to Write Time Overlap
-----------~-
Data Hold From Write Time
Symbol
tRC
tA
tso
tsx
tOTO
tOHA
twe
tw
tWR
tOTW
tow
tOH
MCM2114-20 MCM2114-25 MCM2114-30 MCM2114-45
MCM211.14-20 MCM21 L 14-25 MCM21 L 14-30 MCM21 L 14-45
Min Max Min Max Min Max Min Max
200 250 300 450
200 250 300 450
70 85 100 120
20 20 20 20
60 70 80 100
50 50 50 50
200 250 300 450
120 135 150 200
00
60 70 80 100
120 135 150 200
0 000
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes: 3. A Read occurs during the overlap of a low S and a high W.
4. A Write occurs during the overlap of a low S and a low W.
READ CYCLE TIMING (Note 5)
Il.ddress __J~____----__-----------+--JI'------
WRITE CYCLE TIMING (Notes 6 and 7)
- - - - - twe - - - - - . - j
_ _A d d r e s s
JI~------------------------JI'----_
II
DOllt ------------~---__1~===~
Note: 5. W is high for a Read cycle.
Waveform
Symbol
Notes:
WAVEFORMS
6. If the S low transition occurs simultaneously with the
W low transition, the output buffers remain in a
high-impedance state.
7. IN must be high during all address transitions.
Input
Output
MUST BE
WILL BE
VALID
~
CHANGE
FROM H TO L
WILL CHANGE
FROM H TO L
-.!llll7 CH"'NGE
FROM LTD H
WILL CHANGE
FROM L TO H
~
==>-
~ON'T CARE
ANY CHANGE
PERMITTED
CHANGING
STATE
UNKNOWN
HIGH
IMPEDANCE
2-5



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MCM2114, MCM21 L14
TYPICAL CHARACTERISTICS
SUPPL Y CURRENT versus SUPPLY VOLTAGE
80
;;{
E
75
~
a:
:u:> 70
-~
- --~
--~ 65
k--fo-
~
~
60
4.5 4.75 5.0 5.25 5.5
Vee, SUPPLY VOLTAGE (VOLTS)
SUPPL Y CURRENT versus AMBIENT TEMPERATURE
75
~
;;{ 70
E
............
I 65
i 60
~
55
.............. ........
......... I'......
--
.............
~
...............
-'-'-'
50
o 20 40 60
TA, AMBIENT TEMPERATURE (Oe)
80
OUTPUT SOURCE CURRENT versus OUTPUT VOLTAGE
8.0
7.0
6.0
;;{
E
I 5.0
w
u
a: 4.0
::>
0
CJ)
~
~ 3.0
:i:
E
2.0
1.0
1\
1\
\
\
\
\
~
\
\
\
\
\
\
\
'"o
1.0 2.0 3.0 4.0 5.0 6.0
VOH, OUTPUT VOLTAGE (VOLTS)
OUTPUT SINK CURRENT versus OUTPUT VOL TAGE
9.0
8.0
7.0
« 6.0
E
f-
Z
a:
a:
5.0
::>
u
u"z";
~ 4.0
~
0
3.0
2.0
I1.0
o
o
I
I
!
/
I
/
/
V
I
/
I
0.1 0.2 0.3 0.4
VvL, OUTPUT VOlTAGE (VO LTS)
0.5
,
0.6
2-6




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