MC74VHCU04 Datasheet PDF - ON Semiconductor

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MC74VHCU04
ON Semiconductor

Part Number MC74VHCU04
Description Hex Inverter
Page 6 Pages


MC74VHCU04 datasheet pdf
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MC74VHCU04
Hex Inverter
(Unbuffered)
The MC74VHCU04 is an advanced high speed CMOS unbuffered
inverter fabricated with silicon gate CMOS technology. It achieves
high speed operation similar to equivalent Bipolar Schottky TTL
while maintaining CMOS low power dissipation.
The inputs tolerate voltages up to 7.0 V, allowing the interface of
5.0 V systems to 3.0 V systems.
Features
High Speed: tPD = 3.5 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 10% VCC (Min.)
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2.0 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
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Chip Complexity: 12 FETs or 3 Equivalent Gates
PbFree Packages are Available*
1
A1
3
A2
5
A3
9
A4
A5 11
13
A6
2
Y1
4
Y2
6
Y3
Y=A
8
Y4
10 Y5
12
Y6
Figure 1. Logic Diagram
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 4
1
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MARKING
DIAGRAMS
14
1
SOIC14
D SUFFIX
CASE 751A
VHCU04G
AWLYWW
1
14
TSSOP14
DT SUFFIX
1 CASE 948G
VHCU
04
ALYWG
G
1
14
1
SOEIAJ14
M SUFFIX
CASE 965
VHCU04
ALYWG
1
A = Assembly Location
WL, L = Wafer Lot
Y, YY = Year
WW, W = Work Week
G or G = PbFree Package
(Note: Microdot may be in either location)
FUNCTION TABLE
Inputs
Outputs
AY
LH
HL
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
MC74VHCU04/D



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MC74VHCU04
VCC A6 Y6 A5 Y5 A4 Y4
14 13 12 11 10 9 8
1234567
A1 Y1 A2 Y2 A3 Y3 GND
(Top View)
Figure 2. Pinout: 14Lead Packages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DC Supply Voltage
–0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin DC Input Voltage
–0.5 to + 7.0
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DC Output Voltage
–0.5 to VCC + 0.5
V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIIK Input Diode Current
20 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOK Output Diode Current
± 20 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIout DC Output Current, per Pin
± 25 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC DC Supply Current, VCC and GND Pins
± 50 mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD PowerDissipation in Still Air,
SOIC Packages†
TSSOP Package†
500
450
mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DC Supply Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin DC Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DC Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA OperatingTemperature
Min Max Unit
2.0 5.5 V
0 5.5 V
0
VCC
V
40 + 85 _C
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MC74VHCU04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOH
Parameter
Minimum HighLevel
Input Voltage
Maximum LowLevel
Input Voltage
Minimum HighLevel
Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOL MaximumLowLevel
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOutput Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin
Maximum Input
Leakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC MaximumQuiescent
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSupply Current
Test Conditions
Vin =VIL
IOH = 50mA
Vin = GND
IOH = 4mA
IOH = 8mA
Vin = VIH
IOL = 50mA
Vin = VCC
IOL = 4mA
IOL = 8mA
Vin = 5.5 or GND
Vin = VCC or GND
VCC
V
2.0
3.0 to 5.5
2.0
3.0 to 5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to 5.5
5.5
TA = 25°C
Min Typ Max
TA = 40 to 85°C
Min Max
1.70
VCC x 0.8
1.70
VCC x 0.8
0.30
VCC x 0.2
0.30
VCC x 0.2
1.8 2.0
2.7 3.0
4.0 4.5
1.8
2.7
4.0
2.58 2.48
3.94 3.80
0.0 0.2
0.0 0.3
0.0 0.5
0.2
0.3
0.5
0.36
0.36
± 0.1
0.44
0.44
± 1.0
2.0 20.0
Unit
V
V
V
V
mA
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS (Inputtr = tf= 3.0ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,
tPHL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCin
Parameter
Maximum Propagation Delay,
A or B to Y
Maximum Input Capacitance
Test Conditions
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
TA = 25°C
Min Typ Max
5.0 8.9
7.5 11.4
3.5 5.5
5.0 7.0
5 10
TA = 40 to 85°C
Min Max
1.0 10.5
1.0 13.0
1.0 6.5
1.0 8.0
10
Unit
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD Power Dissipation Capacitance (Per Inverter) (Note 1)
9 pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average
noload
operating current can be obtained by the
dynamic power consumption; PD = CPD 
eVqCuCa2tionfi:nI+CCIC(OCPR)V=CCC.PD

VCC

fin
+
ICC
/
6
(per
buffer).
CPD
is
used
to
determine
the
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
Symbol
VOLP
VOLV
VIHD
VILD
Characteristic
Quiet Output Maximum Dynamic VOL
Quiet Output Minimum Dynamic VOL
Minimum High Level Dynamic Input Voltage
Maximum Low Level Dynamic Input Voltage
TA = 25°C
Typ Max
0.5 0.8
0.5 0.8
4.0
1.0
Unit
V
V
V
V
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MC74VHCU04
A
50%
tPLH
Y 50% VCC
VCC
GND
tPHL
Figure 3. Switching Waveforms
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
CL*
*Includes all probe and jig capacitance
Figure 4. Test Circuit
INPUT
Parasitic Diode
OUTPUT
Parasitic Diode
Figure 5. Input Equivalent Circuit
ORDERING INFORMATION
Device
Package
Shipping
MC74VHCU04DR2
SOIC14
2500 Tape & Reel
MC74VHCU04DR2G
SOIC14
(PbFree)
2500 Tape & Reel
MC74VHCU04DTR2
TSSOP14*
2500 Tape & Reel
MC74VHCU04DTR2G
TSSOP14*
2500 Tape & Reel
MC74VHCU04MEL
SOEIAJ14
2000 Tape & Reel
MC74VHCU04MELG
SOEIAJ14
(PbFree)
2000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently PbFree.
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