MC74VHCU04 Datasheet PDF - Motorola

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MC74VHCU04
Motorola

Part Number MC74VHCU04
Description Hex Inverter
Page 5 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Hex Inverter
(Unbuffered)
The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while maintaining
CMOS low power dissipation.
The inputs tolerate voltages up to 7V, allowing the interface of 5V systems
to 3V systems.
High Speed: tPD = 3.5ns (Typ) at VCC = 5V
Low Power Dissipation: ICC = 2µA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 10% VCC (Min.)
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2V to 5.5V Operating Range
Low Noise: VOLP = 0.8V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V; Machine Model > 200V
Chip Complexity: 12 FETs or 3 Equivalent Gates
LOGIC DIAGRAM
1
A1
2
Y1
3
A2
4
Y2
5
A3
9
A4
6
Y3
Y=A
8
Y4
11
A5
10
Y5
13
A6
12
Y6
Pinout: 14–Lead Packages (Top View)
VCC A6 Y6 A5 Y5 A4 Y4
14 13 12 11 10 9 8
MC74VHCU04
D SUFFIX
14–LEAD SOIC PACKAGE
CASE 751A–03
DT SUFFIX
14–LEAD TSSOP PACKAGE
CASE 948G–01
M SUFFIX
14–LEAD SOIC EIAJ PACKAGE
CASE 965–01
ORDERING INFORMATION
MC74VHCUXXD
MC74VHCUXXDT
MC74VHCUXXM
SOIC
TSSOP
SOIC EIAJ
FUNCTION TABLE
Inputs
Outputs
AY
LH
HL
1234567
A1 Y1 A2 Y2 A3 Y3 GND
6/97
© Motorola, Inc. 1997
1
REV 0



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MC74VHCU04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIIK
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOK
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD
DC Supply Voltage
–0.5 to + 7.0
DC Input Voltage
–0.5 to + 7.0
DC Output Voltage
Input Diode Current
–0.5 to VCC + 0.5
–20
Output Diode Current
± 20
DC Output Current, per Pin
± 25
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air,
SOIC Packages†
TSSOP Package†
± 50
500
450
V
V
V
mA
mA
mA
mA
mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg Storage Temperature
– 65 to + 150
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ* Absolute maximum continuous ratings are those values beyond which damage to the device
may occur. Exposure to these conditions or conditions beyond those indicated may adversely
affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied.
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v vVout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin
DC Supply Voltage
DC Input Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout DC Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA Operating Temperature
Min Max Unit
2.0 5.5 V
0 5.5 V
0 VCC V
–40 + 85 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIH
Parameter
Minimum High–Level
Input Voltage
Test Conditions
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVIL MaximumLow–Level
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎInput Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOH
Minimum High–Level
Output Voltage
Vin =VIL
IOH = –50µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOL
Maximum Low–Level
Output Voltage
Vin = GND
IOH = –4mA
IOH = –8mA
Vin = VIH
IOL = 50µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin = VCC
IOL = 4mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIOL = 8mA
VCC
V
2.0
3.0 to
5.5
2.0
3.0 to
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
TA = 25°C
Min Typ
1.70
VCC x 0.8
Max
TA = –40 to 85°C
Min Max
1.70
VCC x 0.8
Unit
V
0.30
VCC x 0.2
0.30 V
VCC x 0.2
1.8 2.0
2.7 3.0
4.0 4.5
1.8 V
2.7
4.0
2.58 2.48
3.94 3.80
0.0 0.2
0.0 0.3
0.0 0.5
0.2 V
0.3
0.5
0.36 0.44
0.36 0.44
MOTOROLA
2 VHC Data – Advanced CMOS Logic
DL203 — Rev 0



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MC74VHCU04
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin MaximumInput
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC MaximumQuiescent
Supply Current
Test Conditions
Vin = 5.5 or GND
Vin = VCC or GND
VCC
V
0 to 5.5
TA = 25°C
Min Typ Max
± 0.1
5.5 2.0
TA = –40 to 85°C
Min Max
± 1.0
Unit
µA
20.0 µA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC ELECTRICAL CHARACTERISTICS (Inputtr =tf=3.0ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL
Parameter
Maximum Propagation Delay,
A or B to Y
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCin MaximumInputCapacitance
Test Conditions
VCC = 3.3 ± 0.3V
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
CL = 15pF
CL = 50pF
TA = 25°C
Min Typ Max
5.0 8.9
7.5 11.4
3.5 5.5
5.0 7.0
5 10
TA = –40 to 85°C
Min Max
1.0 10.5
1.0 13.0
1.0 6.5
1.0 8.0
10
Unit
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD Power Dissipation Capacitance (Per Inverter) (Note NO TAG)
9 pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Averageoperatingcurrentcanbeobtainedbytheequation:ICC(OPR)=CPD  VCC  fin+ICC / 6(perbuffer).CPDisusedtodeterminetheno–load
dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
Symbol
VOLP
VOLV
VIHD
VILD
Characteristic
Quiet Output Maximum Dynamic VOL
Quiet Output Minimum Dynamic VOL
Minimum High Level Dynamic Input Voltage
Maximum Low Level Dynamic Input Voltage
TA = 25°C
Typ Max
0.5 0.8
–0.5 –0.8
4.0
1.0
Unit
V
V
V
V
A
50%
tPLH
VCC
GND
tPHL
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
CL*
Y 50% VCC
Figure 1. Switching Waveforms
* Includes all probe and jig capacitance
Figure 2. Test Circuit
INPUT
Parasitic Diode
OUTPUT
Parasitic Diode
Figure 3. Input Equivalent Circuit
VHC Data – Advanced CMOS Logic
DL203 — Rev 0
3
MOTOROLA



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MC74VHCU04
–A–
14
1
G
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
8
–B–
7
P 7 PL
0.25 (0.010) M B M
C R X 45°
F
SEATING
PLANE
D 14 PL
K
0.25 (0.010) M T B S
AS
M
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC
0.050 BSC
J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
M 0° 7°
0° 7°
P 5.80 6.20 0.228 0.244
R 0.25 0.50 0.010 0.019
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948G–01
ISSUE O
0.15 (0.006) T U S
2X L/2 14
L
PIN 1
IDENT.
1
14X K REF
0.10 (0.004) M T U S V S
8
B
–U–
7
N 0.25 (0.010)
M
N
F
DETAIL E
0.15 (0.006) T U S
A
–V–
K
J J1 ÇÇÉÉÇÇÉÉK1ÇÇÉÉ
SECTION N–N
0.10 (0.004)
–T– SEATING
PLANE
D
C
G
H DETAIL E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
–W–
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 4.90 5.10 0.193 0.200
B 4.30 4.50 0.169 0.177
C ––– 1.20 ––– 0.047
D 0.05 0.15 0.002 0.006
F 0.50 0.75 0.020 0.030
G 0.65 BSC
0.026 BSC
H 0.50 0.60 0.020 0.024
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
L 6.40 BSC
0.252 BSC
M 0_ 8_ 0_ 8_
MOTOROLA
4 VHC Data – Advanced CMOS Logic
DL203 — Rev 0



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