MC54HCT14A Datasheet PDF - Motorola

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MC54HCT14A
Motorola

Part Number MC54HCT14A
Description Hex Schmitt-Trigger Inverter
Page 5 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Hex Schmitt-Trigger Inverter
with LSTTL Compatible Inputs
High–Performance Silicon–Gate CMOS
The MC54/74HCT14A may be used as a level converter for interfacing
TTL or NMOS outputs to high–speed CMOS inputs.
The HCT14A is identical in pinout to the LS14.
The HCT14A is useful to “square up” slow input rise and fall times. Due to
the hysteresis voltage of the Schmitt trigger, the HCT14A finds applications
in noisy environments.
Output Drive Capability: 10 LSTTL Loads
TTL/NMOS–Compatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0 µA
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 72 FETs or 18 Equivalent Gates
LOGIC DIAGRAM
1
A1
2
Y1
3
A2
4
Y2
5
A3
9
A4
6
Y3
8
Y4
Y=A
11
A5
10
Y5
13
A6
12
Y6
PIN 14 = VCC
PIN 7 = GND
MC54/74HCT14A
14
1
J SUFFIX
CERAMIC PACKAGE
CASE 632–08
14
1
N SUFFIX
PLASTIC PACKAGE
CASE 646–06
14
1
D SUFFIX
SOIC PACKAGE
CASE 751A–03
ORDERING INFORMATION
MC54HCTXXAJ
MC74HCTXXAN
MC74HCTXXAD
Ceramic
Plastic
SOIC
PIN ASSIGNMENT
A1 1
Y1 2
A2 3
Y2 4
A3 5
Y3 6
GND 7
14 VCC
13 A6
12 Y6
11 A5
10 Y5
9 A4
8 Y4
FUNCTION TABLE
Input
A
L
H
Output
Y
H
L
10/95
© Motorola, Inc. 1995
3–1 REV 6



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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMC54/74HCT14A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIout
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPD
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
– 1.5 to VCC + 1.5
– 0.5 to VCC + 0.5
± 20
V
V
mA
DC Output Current, per Pin
± 25 mA
DC Supply Current, VCC and GND Pins
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
± 50
750
500
mA
mW
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTstg StorageTemperature
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTL Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(Ceramic DIP)
– 65 to + 150
260
300
_C
_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ* Maximum Ratings are those values beyond which damage to the device may occur.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance cir-
cuit. For proper operation, Vin and
v vVout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
Functional operation should be restricted to the Recommended Operating Conditions
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRECOMMENDED OPERATING CONDITIONS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVCC DC Supply Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVin, Vout DC Input Voltage, Output Voltage (Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTA Operating Temperature, All Package Types
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtr, tf Input Rise and Fall Time (Figure 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ[*No Limit when Vin 50% VCC, ICC > 1 mA.
Min Max Unit
4.5 5.5 V
0 VCC V
– 55 + 125 _C
— * ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Test Conditions
VCC
Volts
– 55 to
25_C
Min Max
v 85_C
Min Max
v 125_C
Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVT+ max Maximum Positive–Going Vout = 0.1 V or VCC – 0.1 V
4.5
1.9
1.9
1.9 V
Input Threshold Voltage |Iout| 20 µA
5.5 2.1 2.1 2.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVT+ min Minimum Positive–Going Vout = 0.1 V or VCC – 0.1 V
4.5 1.2
1.2
1.2
V
Input Threshold Voltage |Iout| 20 µA
5.5 1.4 1.4 1.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVT– max Maximum Positive–Going Vout = 0.1 V or VCC – 0.1 V
4.5
1.2
1.2
1.2
Input Threshold Voltage |Iout| 20 µA
5.5 1.4 1.4 1.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVT– min Minimum Positive–Going Vout = 0.1 V or VCC – 0.1 V
4.5 0.5
0.5
0.5
Input Threshold Voltage |Iout| 20 µA
5.5 0.6 0.6 0.6
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVHmax MaximumHysteresis
Vout = 0.1 V or VCC – 0.1 V
4.5
1.4
1.4
1.4
Voltage
|Iout| 20 µA
5.5 1.5 1.5 1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVHmin MinimumHysteresis
Vout = 0.1 V or VCC – 0.1 V
4.5 0.4
0.4
0.4
Voltage
|Iout| 20 µA
5.5 0.4 0.4 0 4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOH
Minimum High–Level
Output Voltage
vVin < VT–min
|Iout| 20 µA
4.5 4.4 4.4 4.4 V
5.5 5.4 5.4 5.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎvVin < VT–min
|Iout| 4.0 mA
4.5 3.98
3.84
3.7
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎNOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
(continued)
MOTOROLA
3–2 High–Speed CMOS Logic Data
DL129 — Rev 6



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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMC54/74HCT14A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC CHARACTERISTICS (Voltages Referenced to GND) – continued
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVOL
Parameter
Maximum Low–Level
Output Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIin MaximumInput
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC MaximumQuiescent
Supply Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(per package)
Test Conditions
vVin < VT–min
|Iout| 20 µA
vVin < VT–min
IIoutI 4.0 mA
Vin = VCC or GND
Vin = VCC or GND
Iout = 0 µA
VCC
Volts
4.5
5.5
4.5
5.5
5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎICC
Additional Quiescent
Supply Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 µA
5.5
Temperature Limit
– 55 to
25_C
v 85_C
v 125_C
Min Max Min Max Min Max
0.1 0.1 0.1
0.1 0.1 0.1
0.26 0.33
0.4
± 0.1
± 1.0
± 1.0
1.0 10 40
– 55_C
2.9
25_C to
125_C
2.4
Unit
V
µA
µA
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΖ 55 to
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ25_C
v 85_C
v 125_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSymbol
Parameter
Test Conditions
Min Max Min Max Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPLH, Maximum Propagation Delay, VCC = 5.0 V ± 10%
Fig. 32 40 48 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtPHL Input A to Output Y (L to H) CL = 50 pF, Input tr = tf = 6.0 ns 1 & 2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtTLH, Maximum Output Transition VCC = 5.0 V ± 10%
Fig. 15 19 22 ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtTHL Time.AnyOutput
CL = 50 pF, Input tr = tf = 6.0 ns 1 & 2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎNOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Inverter)*
32 pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
2.7 V
INPUT A 1.3 V
0.3 V
OUTPUT Y
tf
tPLH
90%
1.3 V
10%
tTLH
tr
tPHL
3V
GND
tTHL
Figure 1. Switching Waveforms
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
CL*
* Includes all probe and jig capacitance
Figure 2. Test Circuit
High–Speed CMOS Logic Data
DL129 — Rev 6
3–3
MOTOROLA



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MC54/74HCT14A
OUTLINE DIMENSIONS
J SUFFIX
CERAMIC DIP PACKAGE
-A- CASE 632–08
ISSUE Y
14 8
-B-
17
CL
-T-
SEATING
PLANE
F
GN
D 14 PL
0.25 (0.010) M T A S
K
M
J 14 PL
0.25 (0.010) M T B S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMESNION F MAY NARROW TO 0.76 (0.030)
WHERE THE LEAD ENTERS THE CERAMIC
BODY.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.750 0.785 19.05 19.94
B 0.245 0.280 6.23 7.11
C 0.155 0.200 3.94 5.08
D 0.015 0.020 0.39 0.50
F 0.055 0.065 1.40 1.65
G 0.100 BSC
2.54 BSC
J 0.008 0.015 0.21 0.38
K 0.125 0.170 3.18 4.31
L 0.300 BSC
7.62 BSC
M 0° 15° 0° 15°
N 0.020 0.040 0.51 1.01
14
1
A
F
HG
8
B
7
N SUFFIX
PLASTIC DIP PACKAGE
CASE 646–06
ISSUE L
C
N
SEATING
PLANE
D
K
L
J
M
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 19.56
B 0.240 0.260 6.10 6.60
C 0.145 0.185 3.69 4.69
D 0.015 0.021 0.38 0.53
F 0.040 0.070 1.02 1.78
G 0.100 BSC
2.54 BSC
H 0.052 0.095 1.32 2.41
J 0.008 0.015 0.20 0.38
K 0.115 0.135 2.92 3.43
L 0.300 BSC
7.62 BSC
M 0_ 10_ 0_ 10_
N 0.015 0.039 0.39 1.01
–A–
14
1
G
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
8
–B–
7
P 7 PL
0.25 (0.010) M B M
C R X 45°
F
SEATING
PLANE
D 14 PL
K
0.25 (0.010) M T B S
AS
M
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
D 0.35 0.49 0.014 0.019
F 0.40 1.25 0.016 0.049
G 1.27 BSC
0.050 BSC
J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
M 0° 7°
0° 7°
P 5.80 6.20 0.228 0.244
R 0.25 0.50 0.010 0.019
MOTOROLA
3–4 High–Speed CMOS Logic Data
DL129 — Rev 6



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