MBRI30100CT Datasheet PDF - Taiwan Semiconductor

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MBRI30100CT
Taiwan Semiconductor

Part Number MBRI30100CT
Description 30.0Amps Surface Mount Schottky Barrier Rectifier
Page 2 Pages


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Pb
RoHS
COMPLIANCE
MBRI30100CT
30.0Amps Surface Mount Schottky Barrier Rectifier
I2PAK
Features
— Plastic material used carries Underwriters Laboratory
Classifications 94V-0
— Metal silicon junction, majority carrier conduction
— Low power loss, high efficiency
— High current capability, low forward voltage drop
— High Surge capability
— For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
— Guarding for over voltage protection
— High temperature soldering guaranteed: 260 /
10 seconds at terminals
— Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
— Case: JEDEC I2PAK molded plastic
— Terminals: Leads solderable per MIL-STD-750, Method 2026
— Polarity: As marked
— Mounting position: Any
— Weight: 1.41 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking voltage
Maximum Average Forward Rectified Current
@Tc = 130(Total Device)
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage at
IF = 15A, Ta=25
IF = 15A, Ta=125
IF = 30A, Ta=25
IF = 30A, Ta=125
Maximum Reverse Current (Note 1)
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Ta=125
Voltage rate of change (Rated VR)
Maximum Thermal Resistance Per Leg (Note 2)
Operating Temperature Range
Storage Temperature Range
Note1: Pulse Test : 300us Pulse Width, 1% Duty cycle
Note2: Thermal Resistance from Junction to Case Per Leg
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
dV/dt
RθJC
TJ
TSTG
Dimensions in inches and (millimeters)
Marking Diagram
MBRI30100CT = Specific Device Code
G = Green compound
Y = Year
WW = Work Week
MBRI30100CT
100
70
100
30
200
0.84
0.70
0.94
0.82
0.2
7.5
10,000
1.5
-65 to + 150
-65 to + 175
Unit
V
V
V
A
A
V
mA
mA
V/uS
OC/W
OC
OC
Version:A10



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RATINGS AND CHARACTERISTIC CURVES (MBRI30100CT)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
35
30
25
20
15
10 Resistive or Inductive
5
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE ()
300
250
200
150
100
50
0
1
FIG. 2 MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT PER LEG
8.3ms Single Half
Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
10 TA=125
1 TA=25
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER
LEG
10
1
0.1 TA=125
0.01
0.001
0.0001
0
TA=75
TA=25
20 40 60 80 100 120 140
PERCENT OF VR (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
FIG. 6 TYPICAL TRANSIENT THERMAL
IMPEDANCE PER LEG
100
100
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10
0.1
1 10
REVERSE VOLTAGE (V)
10
1
0.1
0.01 0.1 1 10 100
100 T-PULSE DURATION(s)
Version:A10



MBRI30100CT datasheet pdf
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MBRI30100CT pdf
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MBRI30100CT 30.0Amps Surface Mount Schottky Barrier Rectifier MBRI30100CT
Taiwan Semiconductor
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