MBRF30H50CT Datasheet PDF - Vishay

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MBRF30H50CT
Vishay

Part Number MBRF30H50CT
Description Dual Common Cathode Schottky Rectifier
Page 5 Pages


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MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR30HxxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF30HxxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB30HxxCT
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
2 x 15 A
35 V to 60 V
150 A
0.56 V, 0.59 V
80 μA, 60 μA
175 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified total device
current (fig. 1)
per diode
VRRM
VRWM
VDC
IF(AV)
35
35
35
45 50
45 50
45 50
30
15
60
60
60
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode
at tp = 2 μs, 1 kHz
Peak non-repetitive reverse energy
(8/20 μs waveform)
IRRM
ERSM
1.0
25
0.5
20
UNIT
V
V
V
A
A
A
mJ
Revision: 20-Nov-15
1 Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
Electrostatic discharge capacitor voltage human
body model: C = 100 pF, R = 1.5 k
VC
25
Voltage rate of change (rated VR)
dV/dt
10 000
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
TJ, TSTG
VAC
-65 to +175
1500
UNIT
mJ
kV
V/μs
°C
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
MBR30H35CT
MBR30H45CT
Maximum instantaneous forward voltage
per diode (1)
Maximum reverse current per diode at
working peak reverse voltage (2)
IF = 15 A
IF = 15 A
IF = 30 A
IF = 30 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TJ = 25 °C
TJ = 125 °C
VF
IR
-
0.49
-
0.62
-
5.0
0.62
0.56
0.73
0.67
80
15
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: pulse width 40 ms
MBR30H50CT
MBR30H60CT
- 0.68
0.55 0.59
- 0.83
0.68 0.71
- 60
4.0 15
UNIT
V
μA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
Typical thermal resistance junction to
case per diode
RJC
1.5
4.5
MBRB
1.5
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
MBR30H45CT-E3/45
1.85
ITO-220AB
MBRF30H45CT-E3/45
1.99
TO-263AB
MBRB30H45CT-E3/45
1.35
TO-263AB
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-263AB
TO-263AB
MBRB30H45CT-E3/81
MBR30H45CTHE3/45 (1)
MBRF30H45CTHE3/45 (1)
MBRB30H45CTHE3/45 (1)
MBRB30H45CTHE3/81 (1)
MBRB30H45CTHE3_A/P (1)
MBRB30H45CTHE3_A/I (1)
1.35
1.85
1.99
1.35
1.35
1.35
1.35
Note
(1) AEC-Q101 qualified
PACKAGE CODE
45
45
45
81
45
45
45
81
P
I
BASE QUANTITY
50/tube
50/tube
50/tube
800/teel
50/tube
50/tube
50/tube
800/teel
50/tube
800/teel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
Tube
Tube
Tape and reel
Tube
Tape and reel
Revision: 20-Nov-15
2 Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
40
MBR, MBRB
30
20 MBRF
10
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Derating Curve
100
10 TJ = 150 °C
1
0.1
TJ = 125 °C
0.01
0.001
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
TJ = 25 °C
0.0001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
150
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
125
100
75
50
25
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
0.1
MBR30H35CT - MBR30H45CT
MBR30H50CT - MBR30H60CT
1 10
Reverse Voltage (V)
100
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 150 °C
10
1
0.1
TJ = 25 °C
TJ = 125 °C
0.01
0
MBR30H35CT, MBR30H45CT
MBR30H50CT, MBR30H60CT
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
1
0.1
0.01
0.1 1
t - Pulse Duration (s)
10
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 20-Nov-15
3 Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



No Preview Available !

MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
45° REF.
0.404 (10.26)
0.384 (9.75)
ITO-220AB
0.076 (1.93) REF.
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
0.600 (15.24)
0.580 (14.73)
PIN
0.671 (17.04)
0.651 (16.54)
123
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
TO-263AB
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 20-Nov-15
4 Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



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