MBRF2035 Datasheet PDF - Taiwan Semiconductor


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MBRF2035
Taiwan Semiconductor

Part Number MBRF2035
Description Isolated 20.0 AMPS. Schottky Barrier Rectifiers
Page 2 Pages

MBRF2035 datasheet pdf
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MBRF2035 - MBRF20150
Isolated 20.0 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.112(2.85)
.100(2.55)
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: ITO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
.272(6.9)
.248(6.3)
.606(15.5)
.583(14.8)
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.063(1.6)
MAX
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.161(4.1)
.146(3.7)
.071(1.8) .543(13.8)
MAX
.512(13.2)
2
.100(2.55)
PIN 1
.100(2.55)
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Units
2035 2045 2050 2060 2090 20100 20150
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
35 45 50 60 90 100 150
24 31 35 42 63 70 105
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
VDC
I(AV)
35 45 50 60 90 100 150
20
V
A
Peak Repetitive Forward Current (Rated VR, Square
Wave, 20KHz) at Tc=125oC
IFRM
40
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
IFSM
150
A
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=20A, TC=25oC
IF=20A, TC=125oC
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage (Note2)
@ Tc=125 oC
IRRM
VF
IR
1.0
0.75
0.65
0.2
15
0.5 A
0.82
0.72
0.95
0.87
1.02
0.98
V
0.2 0.1 mA
10 5.0 mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Typical Junction Capacitance
Cj 560
420 pF
Maximum Typical Thermal Resistance(Note 3)
Operating Junction Temperature Range
Storage Temperature Range
RθJC
TJ
TSTG
3.0
-65 to +150
-65 to +175
oC/W
oC
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
Version: A06



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RATINGS AND CHARACTERISTIC CURVES (MBRF2035 THRU MBRF20150)
FIG.1- FORWARD CURRENT DERATING CURVE
20
RESISTIVE OR
INDUCTIVE LOAD
16
12
8
4
0
0 50 100
CASE TEMPERATURE. (oC)
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
40
150
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
150
Tj=Tj max.
125
8.3ms Single Half Sine Wave
JEDEC Method
100
75
50
25
0
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
PER LEG
50
100
10 Tj=1250C
10 Tj=1250C
1
Tj=250C
0.1
Pulse Width=300 s
1% Duty Cycle
MBRF2035-MBRF2045
MBRF2050 & MBRF2060
MBRF20100-MBRF20150
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG
5,000
Tj=250C
f=1.0MHz
Vsig=50mVp-p
1,000
MBRF2090-MBRF20150 MBRF2035-MBRF2060
1
Tj=250C
0.1
0.01
0.001 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
10
1
100
0.1
1 10
REVERSE VOLTAGE. (V)
0.1
100
0.01
0.1
1 10
T, PULSE DURATION, sec.
100
Version: A06




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