MBRB30H45CT Datasheet PDF - Vishay

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MBRB30H45CT
Vishay

Part Number MBRB30H45CT
Description Dual Common Cathode Schottky Rectifier
Page 5 Pages


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MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR30HxxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
123
MBRF30HxxCT
PIN 1
PIN 2
PIN 3
2
1
MBRB30HxxCT
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
IR
TJ max.
Package
2 x 15 A
35 V to 60 V
150 A
0.56 V, 0.59 V
80 μA, 60 μA
175 °C
TO-220AB, ITO-220AB,
TO-263AB
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified total device
current (fig. 1)
per diode
VRRM
VRWM
VDC
IF(AV)
35
35
35
45 50
45 50
45 50
30
15
60
60
60
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
Peak repetitive reverse surge current per diode
at tp = 2 μs, 1 kHz
Peak non-repetitive reverse energy
(8/20 μs waveform)
IRRM
ERSM
1.0
25
0.5
20
UNIT
V
V
V
A
A
A
mJ
Revision: 20-Nov-15
1 Document Number: 88866
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay
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