MBR735 Datasheet PDF - ON Semiconductor

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MBR735
ON Semiconductor

Part Number MBR735
Description (MBR735 / MBR745) Power Rectifiers
Page 5 Pages


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MBR735, MBR745
SWITCHMODE
Power Rectifiers
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
PbFree Packages are Available*
Applications
Power Supply Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for
10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
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SCHOTTKY BARRIER
RECTIFIERS
7.5 AMPERES
35 and 45 VOLTS
3 1, 4
MARKING
4 DIAGRAM
1
3
TO220AC
CASE 221B
STYLE 1
AY WWG
B7x5
KA
A
Y
WW
B7x5
x
KA
G
= Assembly Location
= Year
= Work Week
= Device Code
= 3 or 4
= Diode A Polarity
= PbFree Package
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
Package
Shipping
MBR735
TO220
50 Units/Rail
MBR735G
TO220
(PbFree)
50 Units/Rail
MBR745
TO220
50 Units/Rail
MBR745G
TO220
(PbFree)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2009
March, 2009 Rev. 8
1
Publication Order Number:
MBR735/D
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MBR735, MBR745
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR735
MBR745
VRRM
VRWM
VR
35
45
V
Average Rectified Forward Current
(TC = 164°C)
Per Device
Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IF(AV)
IFRM
IFSM
7.5
7.5
150
A
A
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated VR)
IRRM
Tstg
TJ
dv/dt
1.0
65 to +175
65 to +175
10,000
A
°C
°C
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, JunctiontoCase
Maximum Thermal Resistance, JunctiontoAmbient
Symbol
RqJC
RqJA
Value
3.0
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 25°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol Min Typ Max Unit
vF V
0.48 0.57
0.61 0.72
0.68 0.84
iR mA
10 15
0.03 0.1
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MBR735, MBR745
100 100
10
1 175°C
TJ = 25°C
100°C
125°C
150°C
10
1 175°C
TJ = 25°C
100°C
125°C
150°C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
100
10
1.0
0.1
0.01
0.001
0
TJ = 150°C
125°C
100°C
75°C
25°C
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
50
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MBR735, MBR745
14
12 dc
10
SQUARE
8
6
4
2
0
140 145 150 155 160 165 170 175
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case, Per Leg
180
14
12 dc
10
RqJA = 16°C/W
RqJA = 60°C/W
(No Heat Sink)
8
dc
6
4
SQUARE
2 WAVE
0
0 25 50 75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Ambient, Per Leg
30
28
26
TJ = 25°C
24
22
20
18
16
14
12
10
8
6
4
2
0
0246
SQUARE
WAVE
dc
8 10 12 14 16 18 20 22 24 26 28 30
1000
900
800
700
600
500
400
300
200
100
0
0
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
TJ = 25°C
f = 1 MHz
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance
50
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