MBR30H100CT Datasheet PDF - Inchange Semiconductor

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MBR30H100CT
Inchange Semiconductor

Part Number MBR30H100CT
Description Schottky Barrier Rectifier
Page 2 Pages


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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR30H100CT
FEATURES
·Low forward voltage
·Low power loss,high efficiency
·High surge capability
·175operating junction temperature
·Pb-Free Package is Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
IFSM
TJ
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
Average Rectified Forward Current (Per Leg)
(Total)
15
30
Peak Forward Surge Current, 8.3 ms single
halfsine-wave superimposed on rated load
(JEDEC method)
250
Junction Temperature
-65~175
V
A
A
Tstg Storage Temperature Range
-65~175
dv/dt Voltage Rate of Change (Rated VR)
10,000 V/μs
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark



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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR30H100CT
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
MAX
2.0
60
UNIT
/W
/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width300μs,Duty Cycle1%)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
IF= 15A, TC= 25
VF
Maximum Instantaneous Forward Voltage
IF= 15A, TC= 125
IF= 30A, TC= 25
IF= 30A, TC=125
IR
Maximum Instantaneous Reverse Current
Rated DC Voltage, TC= 25
Rated DC Voltage, TC= 125
0.80
0.67
0.93
0.80
0.0045
6.0
V
mA
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



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