MBR30H100C Datasheet PDF - BCD

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MBR30H100C
BCD

Part Number MBR30H100C
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Page 11 Pages


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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100C
General Description
Main Product Characteristics
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
IF(AV)
VRRM
TJ
VF(max)
2*15A
100V
175oC
0.67V
MBR30H100C is available in TO-220-3, TO-220-3(2)
and TO-220F-3 packages
Features
· Low Forward Voltage: 0.67V @125oC
· High Surge Capacity
· 175oC Operating Junction Temperature
· 30 A Total (15A Each Diode Leg)
· Guard-Ring for Stress Protection
· Pb-Free Package
Applications
· Power Supply Output Rectification
· Power Management
· Instrumentation
Mechanical Characteristics
· Case: Epoxy, Molded
· Epoxy Meets UL 94 V-0 @ 0.125 in
· Weight (Approximately):
2 Grams (TO-220-3, TO-220-3(2) and
TO-220F-3)
· Finish: All External Surfaces Corrosion Resistant
and Terminal
· Leads are Readily Solderable
· Lead Temperature for Soldering Purposes:
260oC Maximumfor 10 Seconds
TO-220F-3
TO-220-3
TO-220-3(2)
Apr. 2009 Rev. 1. 2
Figure 1. Package Type of MBR30H100C
BCD Semiconductor Manufacturing Limited
1



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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Pin Configuration
MBR30H100C
(TO-220-3)
T Package
(TO-220-3(2))
3 A2 3 A2
2 K 2K
1 A1 1 A1
TF Package
(TO-220F-3)
3 A2
2K
1 A1
Figure 2. Pin Configuration of MBR30H100C(front view)
A1
K
A2
Apr. 2009 Rev. 1. 2
Figure 3. Internal Structure of MBR30H100C
BCD Semiconductor Manufacturing Limited
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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Ordering Information
Data Sheet
MBR30H100C
MBR30H100C
Circuit Type
Package
T: TO-220-3/TO-220-3(2)
TF: TO220F-3
-
E1: Lead Free
G1: Green
Blank: Tube
Package
Part Number
Lead Free
Green
Marking ID
Lead Free
Green
TO-220-3/ MBR30H100CT-
TO-220-3(2) E1
MBR30H100CT-G1
MBR30H100CT-
E1
MBR30H100CT-
G1
TO-220F-3
MBR30H100CTF- MBR30H100CTF-G1 MBR30H100CTF- MBR30H100CTF-
E1 E1 G1
Packing Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
3



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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Data Sheet
MBR30H100C
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC=162oC
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC=150oC
Non Repetitive Peak Surge Current (Surge applied at rated
load conditions half wave, single phase, 60 Hz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD (Machine Model=C)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
TJ
TSTG
dv/dt
100
15
30
250
175
-65 to 175
10000
>400
V
A
A
A
oC
oC
V/µs
V
ESD (Human Body Model=3B)
>8000
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/RθJA.
Thermal Characteristics
Parameter
Symbol
Maximum Thermal Resistance
RθJC
RθJA
Condition
Junction to Case
TO-220-3/
TO-220-3(2)
TO-220F-3
Junction to Ambient
TO-220-3/
TO-220-3(2)
Value
2.0
2.5
60
Unit
oC/W
Apr. 2009 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
4



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