MBR3060PT Datasheet PDF - GOOD ELECTRONIC


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MBR3060PT
GOOD ELECTRONIC

Part Number MBR3060PT
Description SCHOTTKY BARRIER RECTIFIER
Page 2 Pages

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MBR3035PT THRU MBR30200PT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 35 and 200 Volts Forward Current - 30.0 Ampere
TO-247AD/TO-3P
FEATURES
0.244(6.2)
0.212(5.4)
0.0144(3.65)
0.0140(3.55)
0.640(16.26)
0.610(15.75)
0.102(2.49)
0.087(1.50)
0.216(5.49)
0.170(4.32)
0.209(5.3)
0.185(4.7)
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0.
Flame Retardant Epoxy Molding Compound.
Metal silicon junction, majority carrier conduction.
Low power loss, high efficiency.
High current capability.
Guardring for overvoltage protection.
For use low voltage, high frequency inverters froo wheeling, and
polarlity protection application.
In compliance with EU Rohs 2002/95/EC directives.
Pin 1
0.084(2.13)
0.065(1.65)
0.038(0.96)
0.019(0.50)
MECHANICAL DATA
Case: TO-247AD/TO-3P, Molded plastic.
Terminals: Solderable per MIL-STD-750Method 2026
Standard Packaging : Tube.
Polarity: As marked.
Mounting Position: Any.
Weight: 0.2245 Ounces(6.3673 grams)
0.055(1.4)
0.040(1.0)
0.433(11.0)
0.426(10.8)
Dimensions in inches and (millimeters)
0.031(0.8)
0.016(0.4)
AC 1
AC 3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specif ied.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
PARAMETER
SYMBOLS
MBR30 MBR30 MBR30 MBR30 MBR30 MBR30 MBR30 MBR30 MBR30
35PT 45PT 50PT 60PT 80PT 90PT 100PT 150PT 200PT
UNITS
Maximum repetitive peak reverse voltage
VRRM
35 45 50 60 80 90 100 150 200 Volts
Maximum RMS voltage
VRMS 24.5 31.5 35 42 56 63 70 105 140 Volts
Minimum DC Breakdown Voltage
VDC
35 45 50 60 80 90 100 150 200 Volts
Average Rectified current
Non-repetitive Peak Forward Surge Current at 1=8.3ms half
sine-wave superimposed on rated load (JEDEC mathod)
Maximum Forward Voltage
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Thermal Resistance
at IF=15A Per Diode
TJ= 25°C
TJ=125°C
IF(AV)
IFSM
VF
IR
Rθ JC
0.7
Operating Junction and Storage Temperature Range
TSTG -50~+150
Note: Both bonding and chip structure are available.
0.75
0.1
20
30
275
0.8
1.4
-65 +175
0.9
0.05
20
Amp
Amps
Volts
mA
°C/W
°C
GOOD ELECTRONIC CO., LTD



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MBR3035PT THRU MBR30200PT
RATINGS AND CHARACTERISTIC CURVES MUR3050PT THRU MUR30200PT
FIG. 1- FORWARD CURRENT DERATING CURVE
50
35V
40 45-200V
30
20
10
RESISTIVE OR
INDUCTIVE LOAD
0
0.0 20 40 60 80 100 120 140 160 180
LEAD TEMPERATURE (°C)
275
250
225
200
175
150
125
100
75
50
25
0
1
FIG. 2-TYPICAL FORWARD SURGE
CHARACTERISTICS
2
5 10 20
50 100
No. OF CYCLE at 60Hz
FIG. 3-TYPICAL REVERSE CHARACTERISTICS
10
TC=125°C
1
0.1
0.01
0.001
0
TC=75°C
TC=25°C
20 40 60 80
PERCENT OF INSTANTANEOUS
REVERSE VOLTAGE (%)
100
FIG. 4-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100.0
10.0
50~60V
35~45V
1.0
150~200V
80~100V
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
INSTANTANEOUS FORWORD VOLTAGE (V)
GOOD ELECTRONIC CO., LTD




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