MBR3045C Datasheet PDF - BCD

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MBR3045C
BCD

Part Number MBR3045C
Description HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
Page 11 Pages


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Data Sheet
HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
MBR3045C
General Description
Main Product Characteristics
High efficiency dual Schottky rectifier suited for
switch mode power supplies and other power convert-
ers. This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are required.
MBR3045C is available in TO-220-3, TO-220-3 (2)
and TO-220F-3 packages.
IF(AV)
VRRM
TJ
VF(max)
2×15A
45V
150oC
0.57V
Features
· Low Forward Voltage: 0.57V @ 125oC
· Low Power Loss/High Efficiency
· 150oC Operating Junction Temperature
· 30A Total (15A Each Diode Leg)
· Guard-ring for Stress Protection
· High Surge Capacity
· Pb-free Package
Mechanical Characteristics
· Case: Epoxy, Molded
· Epoxy Meets UL 94V-0 @ 0.125in.
· Weight (Approximately): 1.9Grams
· Finish: All External Surfaces Corrosion Resistant
and Terminal
· Leads are Readily Solderable
· Lead Temperature for Soldering Purposes:
260oC Maximum for 10 Seconds
Applications
· Power Supply Output Rectification
· Power Management
· Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Mar. 2011 Rev. 1. 1
Figure 1. Package Types of MBR3045C
BCD Semiconductor Manufacturing Limited
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HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
Pin Configuration
(TO-220-3) (Optional)
T Package
(TO-220-3 (2))
Data Sheet
MBR3045C
3 A2
2K
1 A1
3 A2
2K
1 A1
TF Package
(TO-220F-3)
3
2
1
A2
K
A1
Figure 2. Pin Configuration of MBR3045C (Top View)
A1
K
A2
Figure 3. Internal Structure of MBR3045C
Mar. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
Ordering Information
Data Sheet
MBR3045C
MBR3045C
Circuit Type
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
-
E1: Lead Free
G1: Green
Blank: Tube
Package
Part Number
Lead Free
Green
TO-220-3 (2) MBR3045CT-E1 MBR3045CT-G1
TO-220F-3 MBR3045CTF-E1 MBR3045CTF-G1
Marking ID
Lead Free
Green
MBR3045CT-E1 MBR3045CT-G1
MBR3045CTF-E1 MBR3045CTF-G1
Packing Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Mar. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
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HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC=126oC
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=138oC
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD (Machine Model=C)
ESD (Human Body Model=3B)
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
TJ
TSTG
dv/dt
Data Sheet
MBR3045C
Value
45
15
30
200
150
-65 to 150
10000
400
8000
Unit
V
A
A
A
oC
oC
V/µs
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA.
Thermal Characteristics
Parameter
Symbol
Maximum Thermal Resistance
θJC
θJA
Condition
Junction to Case
TO-220-3/
TO-220-3 (2)
TO-220F-3
Junction to Ambient
TO-220-3/
TO-220-3 (2)
Value
3.0
2.0
60
Unit
oC/W
Mar. 2011 Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4



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