MBR20150C Datasheet PDF - BCD

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MBR20150C
BCD

Part Number MBR20150C
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Page 9 Pages


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Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters.
This device is intended for use in medium voltage
operation, and particularly, in high frequency circuits
where low switching losses and low noise are
required.
The MBR20150C is available in standard, TO-220-3,
TO-220-3 (2) and TO-220F-3 packages.
Features
High Surge Capacity
• 150°C Operating Junction Temperature
• 20 A Total (10 A Per Diode Leg)
• Guard-Ring foe Stress Protection
• Pb- Free Packages are available
Main Product Characteristics
IF(AV)
VRRM
TJ
VF(max)
2*10A
150V
150°C
0.75V
Mechanical Characteristics
Case: Epoxy, Molded
• Epoxy Meets UL 94 V-0@ 0.125 in
• Weight (Approximately):
1.9 Grams (TO-220-3, TO-220-3(2) and
TO-220F-3)
• Finish: All External Surfaces Corrosion
Resistant and Terminal
• Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Applications
• Power Supply Output Rectification
• Power Management
• Instrumentation
TO-220F-3
Jun. 2009 Rev. 1. 0
TO-220-3
TO-220-3 (2)
Figure 1. Package Type of MBR20150C
BCD Semiconductor Manufacturing Limited
1



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Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C
Pin Configuration
(TO-220-3)
T Package
(TO-220-3 (2))
3 A2
2K
1 A1
TF Package
(TO-220F-3)
Figure 2. Pin Configuration of MBR20150C (Top View)
Figure 3. Internal Structure of MBR20150C
Jun. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
2



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Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C
Ordering Information
MBR20150C
Circuit Type
Package
T: TO-220-3/TO-220-3 (2)
TF: TO-220F-3
-
E1: Lead Free
G1: Green
Blank: Tube
Package
TO-220-3/
TO-220-3(2)
TO-220F-3
Part Number
Lead Free
MBR20150CT-
E1
MBR20150CTF
-E1
Green
MBR20150CT-
G1
MBR20150CTF
-G1
Marking ID
Lead Free
MBR20150CT-
E1
MBR20150CTF
-E1
Green
MBR20150CT-
G1
MBR20150CTF
-G1
Packing
Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Products with “G1” suffix are available in green packages.
Absolute Maximum Ratings ( Per Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 134°C
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 133°C
Non repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase,
60Hz)
Operating Junction Temperature RangeNote 2
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD Ratings: Machine Model = C
Human Body Model =3B
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
TJ
TSTG
dv/dt
Value
150
10
20
TBD
150
-55 to 150
TBD
> 400
> 8000
Unit
V
A
A
A
°C
°C
V/µs
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ <
1/θJA.
Jun. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
3



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Preliminary Datasheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MBR20150C
Recommended Operating Conditions
Parameter
Symbol Condition
Maximum Thermal Resistance
θJC
θJA
Junction to Case
Junction to
Ambient
Value
TO-220-3/
TO-220-3(2)
TO-220F-3
TO-220-3/
TO-220-3(2)
TO-220F-3
2.0
3.0
60
60
Unit
°C/W
Electrical Characteristics
Parameter
Maximum Instantaneous Forward
Voltage Drop (Note 3)
Maximum Instantaneous Reverse
Current (Note 3)
Symbol
VF
IR
Conditions
IF=10A, TC=25°C
IF=10A, TC=125°C
Rated DC
TC=125°C
Rated DC
TC=25°C
Voltage,
Voltage,
Note 3: Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%.
Value
0.9
0.75
20
0.05
Units
V
mA
Jun. 2009 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
4



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