MBR20150 Datasheet PDF - Micro Commercial Components


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MBR20150
Micro Commercial Components

Part Number MBR20150
Description 20 Amp High Voltage 150Volts Barrier Rectifier Power Schottky
Page 3 Pages

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MCC
  omponents
21201 Itasca Street Chatsworth

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Features
High Junction Temperature Capability
Good Trade Off Between Leakage Cur-
rent And Forward Volage Drop
Low Leakage Current
MBR20150CT

20 Amp High Voltage
Power Schottky
Barrier Rectifier
150Volts
Maximum Ratings
Operating J unction Temperature : 150°C
Storage Temperature: - 50°C to +150°C
Per d iode Thermal Resistance 2.2°C/W Junction to Case
Total Thermal Resistance 1.3°C/W Junction to Case
MCC
Catalog
Number
MBR 20150 CT
Maximum
Recurrent
Peak Reverse
Voltage
150 V
Maximum
RMS
Voltage
105V
Maximum
DC
Blocking
Voltage
150 V
TO-220AB
BL
C
D
K
E
PIN
13
F
M
A
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
20 A TC = 155 °C
Peak Forward Surge
Current
IFSM
180A
8.3ms,half
sine wave
Maximum
Instantaneous
Forward Voltage
MBR20150CT
VF
.92V
IFM = 10A
TJ = 25°C
VF
.75V
IFM = 10A
TJ = 125°C
Maximum
Reverse Current At
Rated DC Blocking
Voltage
IR
25 µ A
5m A
TJ = 25°C
TJ = 125°C
I
HH
PIN 1
PIN 3
G
J
N
PIN 2
CASE


INCHES
MM
 
A .600

.620

15.25

15.75
B
.393
.409
10.00
10.40
C
.104
.116
2.65
2.95
D
.244
.259
6.20
6.60
E
.356
.361
9.05
9.15
F
.137
.154
3.50
3.93
G
.511
.551
13.00
14.00
H
.094
.106
2.40
2.70
I
.024
.034
0.61
0.88
J
.019
.027
0.49
0.70
K
.147
.151
3.75
3.85
L
.173
.181
4.40
4.60
M
.048
.051
1.23
1.32
N 0.102t y p.
2.6t yp .
 
* Pulse Test: Pulse Width380µsec, Duty Cycle 2%
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MBR20150CT
MCC
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
PF(av)(W)
10
9
δ = 0.05 δ = 0.1 δ = 0.2
δ = 0.5
8
7 δ=1
6
5
4
3T
2
1
IF(av) (A)
δ=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IF(av)(A)
12
10
8
6
4
T
2
δ=tp/T
0
0 25
tp
50
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
75 100 125 150
175
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
IM(A)
150
125
100
75
50
IM
25
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=50°C
Tc=75°C
Tc=125°C
1E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4 δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 6: Junction capacitance versus reverse voltage
applied (typical values, per diode).
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
0
25
Tj=175°C
Tj=150°C
Tj=125°C
Tj=100°C
C(pF)
1000
100
Tj=25°C
VR(V)
50 75 100 125 150
10
12
F=1MHz
Tj=25°C
VR(V)
5 10 20
50 100 200
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MCC
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
10.0
Tj=125°C
Typical values
Tj=125°C
1.0
Tj=25°C
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Fig. 8: Thermal resistance junction to ambient versus
copper surface under tab (Epoxy printed circuit board,
copper thickness: 35µm) (STPS20150CG only).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0246
S(cm²)
8 10 12 14 16 18 20
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