MBR10200C Datasheet PDF - BCD

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MBR10200C
BCD

Part Number MBR10200C
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Page 11 Pages


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Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR10200C
General Description
Main Product Characteristics
High voltage dual schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
MBR10200C is available in TO-220-3, TO-220-3 (2)
and TO-220F-3 packages.
IF(AV)
VRRM
TJ
VF(max)
2×5A
200V
150oC
0.85V
Features
· High Surge Capacity
· 150oC Operating Junction Temperature
· 10A Total (5A Each Diode Leg)
· Guard-ring for Stress Protection
· Pb-free Package
Applications
· Power Supply Output Rectification
· Power Management
· Instrumentation
Mechanical Characteristics
· Case: Epoxy, Molded
· Epoxy Meets UL 94V-0 @ 0.125in.
· Weight (Approximately):
1.9Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
· Finish: All External Surfaces Corrosion Resistant
and Terminal
· Leads are Readily Solderable
· Lead Temperature for Soldering Purposes:
260oC Maximum for 10 Seconds
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR10200C
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
1



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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Pin Configuration
(TO-220-3) (Optional)
T Package
3 A2
2K
1 A1
Data Sheet
MBR10200C
(TO-220-3 (2))
3
2
1
A2
K
A1
TF Package
(TO-220F-3)
3
2
1
A2
K
A1
Figure 2. Pin Configuration of MBR10200C (Top View)
A1
K
A2
Figure 3. Internal Structure of MBR10200C
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
2



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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Ordering Information
Data Sheet
MBR10200C
MBR10200C
Circuit Type
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
-
E1: Lead Free
G1: Green
Blank: Tube
Package
Part Number
Lead Free
Green
Marking ID
Lead Free
Green
TO-220-3 (2) MBR10200CT-E1 MBR10200CT-G1 MBR10200CT-E1 MBR10200CT-G1
TO-220F-3 MBR10200CTF-E1 MBR10200CTF-G1 MBR10200CTF-E1 MBR10200CTF-G1
Packing Type
Tube
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
3



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HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC=140oC
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=138oC
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60kHz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated VR)
ESD (Machine Model=C)
ESD (Human Body Model=3B)
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
TJ
TSTG
dv/dt
Data Sheet
MBR10200C
Value
200
5
10
100
150
-50 to 150
10000
>400
>8000
Unit
V
A
A
A
oC
oC
V/µs
V
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA.
Thermal Characteristics
Parameter
Symbol
Maximum Thermal Resistance
θJC
θJA
Condition
Junction to Case
TO-220-3/
TO-220-3 (2)
TO-220F-3
Junction to Ambient
TO-220-3/
TO-220-3 (2)
TO-220F-3
Value
3.0
4.5
60
60
Unit
oC/W
Mar. 2011 Rev. 1. 4
BCD Semiconductor Manufacturing Limited
4



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